公开(公告)号：US20170250370A1

公开(公告)日：2017-08-31

申请号：US15055269

申请日：2016-02-26

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Helinda NOMINANDA ,  Wen-Hao WU

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5253 ,  C23C16/56

Abstract: Embodiments of the disclosure provide interface integration and adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of enhancing interface adhesion and integration in a film structure disposed on a substrate includes performing a plasma treatment process on an inorganic layer disposed on a substrate in a processing chamber to form a treated layer on the substrate, wherein the substrate includes an OLED structure, controlling a substrate temperature less than about 100 degrees Celsius, and forming an organic layer on the treated layer. Furthermore, an encapsulating structure for OLED applications includes an inorganic layer formed on an OLED structure on a substrate, an electron beam treated layer formed on the inorganic layer, and an organic layer formed on the electron beam treated layer.

公开(公告)号：US20250008823A1

公开(公告)日：2025-01-02

申请号：US18594527

申请日：2024-03-04

Applicant: Applied Materials, Inc.

Inventor： Zongkai WU ,  Pei Chia CHEN ,  Wen-Hao WU ,  Jungmin LEE ,  Chung-chia CHEN ,  Yu-Hsin LIN ,  Kevin CHEN ,  Wenhui LI ,  Yu-Min WANG ,  Lai ZHAO ,  Soo Young CHOI

IPC: H10K59/80 ,  H10K59/12 ,  H10K59/122

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display, such as an organic light-emitting diode (OLED) display, are provided. In one example, a sub-pixel includes a substrate, adjacent overhang structures, an anode, an OLED material, a cathode, an encapsulation layer stack. The encapsulation layer stack includes a first layer, a second layer disposed over the first layer, and a third layer. The first layer and the second layer have a first portion disposed over the cathode, a second portion disposed over a sidewall of each overhang structure, and a third portion disposed under an underside surface of an extension of each overhang structure. A gap is defined by contact of the first portion of the second layer and the third portion of the second layer. The third layer is disposed over the second layer outside of the gap.

公开(公告)号：US20240352584A1

公开(公告)日：2024-10-24

申请号：US18618937

申请日：2024-03-27

Applicant: Applied Materials, Inc.

Inventor： Yu-Hsuan WU ,  Teng Mao WANG ,  Yan-Chi PAN ,  Yi-Jiun SHIU ,  Jrjyan Jerry CHEN ,  Cheng-yuan LIN ,  Hsiao-Ling YANG ,  Yu-Min WANG ,  Wen-Hao WU

IPC: C23C16/455

CPC classification number: C23C16/45559

Abstract: The present disclosure generally provides an apparatus and method for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore, and a gas deflector having a length and a width unequal to the length coupled to the backing plate by a plurality of outward fasteners coupled to a plurality of outward threaded holes formed in the backing plate, in which a spacer is disposed between the backing plate and the gas deflector, and in which a length to width ratio of the gas deflector is about 0.1:1 to about 10:1.

公开(公告)号：US20230263012A1

公开(公告)日：2023-08-17

申请号：US18139243

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Chung-Chia CHEN ,  Ji Young CHOUNG ,  Dieter HAAS ,  Yu-Hsin LIN ,  Jungmin LEE ,  Wen-Hao WU ,  Si Kyoung KIM

IPC: H10K59/122 ,  H10K59/173 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/173 ,  H10K59/873

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. In one example, a device includes a substrate, pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. The first sub-pixel includes a first anode, OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.

公开(公告)号：US20220209188A1

公开(公告)日：2022-06-30

申请号：US17604503

申请日：2019-07-10

Applicant: Applied Materials, Inc.

Inventor： Wen-Hao WU ,  Jriyan Jerry CHEN ,  Dong Kil YIM

IPC: H01L51/52 ,  H01L29/786 ,  H01L27/32

Abstract: Embodiments of the present disclosure generally relate to an organic light emitting diode device, and more particularly, to moisture barrier films utilized in an OLED device. The OLED device comprises a thin film encapsulation structure and/or a thin film transistor. A moisture barrier film is used as a first barrier layer in the thin film encapsulation structure and as a passivation layer and/or a gate insulating layer in the thin film transistor. The moisture barrier film comprises a silicon oxynitride material having a low refractive index of less than about 1.5, a low water vapor transmission rate of less than about 5.0×10−5 g/m2/day, and low hydrogen content of less than about 8%.

公开(公告)号：US20210265603A1

公开(公告)日：2021-08-26

申请号：US17313867

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Wen-Hao WU ,  Jrjyan Jerry CHEN

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: Embodiments of the present disclosure generally relate to methods for forming an organic light emitting diode (OLED) device. Forming the OLED device comprises depositing a first barrier layer on a substrate having an OLED structure disposed thereon. A first sublayer of a buffer layer is then deposited on the first barrier layer. The first sublayer of the buffer layer is cured with a mixed gas plasma. Curing the first sublayer comprises generating water from the mixed gas plasma in a process chamber in which the curing occurs. The deposition of the first sublayer and the curing of the first sublayer is repeated one or more times to form a completed buffer layer. A second barrier layer is then deposited on the completed buffer layer.

公开(公告)号：US20190097175A1

公开(公告)日：2019-03-28

申请号：US15719067

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Wen-Hao WU ,  Jrjyan Jerry CHEN

IPC: H01L51/52 ,  H01L51/56 ,  C23C16/34 ,  C23C16/30 ,  C23C16/455 ,  C23C16/50

Abstract: Embodiments described herein generally related to a method for manufacturing an encapsulating structure for a display device, more particularly, for manufacturing a TFE structure including a light scattering layer. The TFE structure further includes one or more barrier layers. All layers of the TFE structure are formed in a PECVD apparatus. The light scattering layer is formed by a PECVD process, in which a silicon containing precursor and a nitrogen containing precursor are introduced into the PECVD apparatus. The flow rate of the silicon containing precursor is equal to or greater than the flow rate of the nitrogen containing precursor. The light scattering layer enhances light out-coupling from a light emitting device disposed under the TFE structure.