公开(公告)号：US20240321636A1

公开(公告)日：2024-09-26

申请号：US18186656

申请日：2023-03-20

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Raghav Sreenivasan

IPC: H01L21/768 ,  H01L23/373 ,  H01L23/532

CPC classification number: H01L21/76883 ,  H01L21/7684 ,  H01L23/3736 ,  H01L23/53233 ,  H01L21/02068 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76802 ,  H01L21/76843 ,  H01L23/53238

Abstract: The present technology includes semiconductor processing methods and devices with improved expansion of the bulk material in substrate features. Methods include cleaning a substrate that is formed from silicon oxide and that defines one or more features and that includes a liner that extends across the silicon oxide and within one or more features and a copper-containing layer deposited on the liner and extending within the one or more features. Methods include depositing a second metal over the substrate, where the second metal has a coefficient of thermal expansion of greater than or about 17. Methods also include diffusing the second metal into the copper containing layer to form a copper alloy.

公开(公告)号：US11880052B2

公开(公告)日：2024-01-23

申请号：US17100416

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: G02B5/08 ,  H01L33/46 ,  H01L23/48 ,  H01L33/10 ,  G02F1/1335 ,  G02F1/1362

CPC classification number: G02B5/0808 ,  H01L23/481 ,  H01L33/10 ,  H01L33/46 ,  G02F1/133553 ,  G02F1/136277

Abstract: Processing methods may be performed to form a grounded mirror structure on a semiconductor substrate. The methods may include revealing a metal layer. The metal layer may underlie a spacer layer. The metal layer may be revealed by a dry etch process. The method may include forming a mirror layer overlying the spacer layer and the metal layer. The mirror layer may contact the metal layer. The method may also include forming an oxide inclusion overlying a portion of the mirror layer. The portion of the mirror layer may be external to the spacer layer.

公开(公告)号：US11573452B2

公开(公告)日：2023-02-07

申请号：US17100422

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: G02F1/1335 ,  G02F1/1362

Abstract: Processing methods may be performed to forming a pixel material in a semiconductor structure. The methods may include forming a sacrificial hardmask overlying an uppermost layer of an optical stack of the semiconductor structure, the uppermost layer having a thickness. The methods may include forming a via through the sacrificial hardmask in the optical stack by a first etch process unselective to a metal layer of the semiconductor structure. The methods may include filling the via with a fill material, wherein a portion of the fill material extends over the sacrificial hardmask and contacts the metal layer. The methods may include removing a portion of the fill material external to the via by a removal process selective to the fill material. The methods may also include removing the sacrificial hardmask by a second etch process selective to the sacrificial hardmask while maintaining the thickness of the uppermost layer.

公开(公告)号：US11410873B2

公开(公告)日：2022-08-09

申请号：US16953567

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Tyler Sherwood ,  Michael Chudzik ,  Siddarth Krishnan

IPC: H01L29/00 ,  H01L29/94 ,  H01L31/062 ,  H01L21/768 ,  H01L29/06 ,  H01L21/762

Abstract: Exemplary methods of forming a semiconductor device may include etching a trench from a first surface of a semiconductor substrate to a first depth within the semiconductor substrate. The trench may be characterized by a first width through the first depth. The methods may include forming a liner along sidewalls of the trench. The methods may include etching the trench to a second depth at least ten times greater than the first depth. The trench may be characterized by a second width through the second depth. The methods may include filling the trench with a dielectric material. A seam formed in the dielectric material may be maintained below the first depth.

公开(公告)号：US20220165564A1

公开(公告)日：2022-05-26

申请号：US16953577

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Tyler Sherwood

IPC: H01L21/02 ,  H01L21/762 ,  H01L29/06

Abstract: Exemplary methods of forming a semiconductor structure may include forming a liner along sidewalls of a trench defined from a first surface of a semiconductor substrate. The liner may extend along the first surface of the semiconductor substrate. The methods may include filling the trench with a dielectric material. The methods may include removing the dielectric material and the liner from the first surface of the semiconductor substrate. The methods may include forming a layer of the liner across the first surface of the semiconductor substrate and the trench defined within the semiconductor substrate.

公开(公告)号：US20250079357A1

公开(公告)日：2025-03-06

申请号：US18460189

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Raghav Sreenivasan ,  Maria Gorchichko ,  Kun Li

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/67

Abstract: A first structure for semiconductor devices having a dielectric film on the top surface can be used to form semiconductor devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The top surface of the dielectric film of the first structure can be hybrid bonded to a dielectric layer of a second structure. The dielectric film of the first structure and the dielectric layer of the second structure can be different dielectrics. In this way, the hybrid bonding of the two structures includes the hybrid bonding of asymmetric dielectrics.

公开(公告)号：US12033964B2

公开(公告)日：2024-07-09

申请号：US17411599

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Joseph F. Salfelder ,  Ki Cheol Ahn ,  Kai Ma ,  Raghav Sreenivasan ,  Jason Appell

IPC: H01L23/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L24/03 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/7684 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L2224/03616 ,  H01L2224/05073 ,  H01L2224/05647 ,  H01L2224/27616 ,  H01L2224/29186

Abstract: Methods of semiconductor processing may include contacting a substrate with a first slurry and a first platen. The substrate may include silicon oxide defining one or more features, a liner extending across the silicon oxide and within the one or more features, and a copper-containing layer deposited on the liner and extending within the one or more features. The first slurry and the first platen may remove a first portion of the copper-containing layer. The methods may include contacting the substrate with a second slurry and a second platen, which may remove at least a portion of the liner. The methods may include contacting the substrate with a third slurry and a third platen, which may remove a second portion of the copper-containing layer. The methods may include contacting the substrate with a fourth slurry and a fourth platen, which may remove at least a portion of the silicon oxide.

公开(公告)号：US11881539B2

公开(公告)日：2024-01-23

申请号：US17100402

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: H01L33/00 ,  H01L33/62 ,  G02F1/1362

CPC classification number: H01L33/0095 ,  G02F1/136277 ,  H01L33/62 ,  H01L2933/0066

Abstract: Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.

公开(公告)号：US20230369532A1

公开(公告)日：2023-11-16

申请号：US17745056

申请日：2022-05-16

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Raghav Sreenivasan

IPC: H01L33/00 ,  H01L25/075

CPC classification number: H01L33/007 ,  H01L25/075 ,  H01L33/32

Abstract: A microLED-quality layer of gallium nitride (GaN) may be formed above a silicon substrate for microLED devices to be formed. Typically, mismatches between the crystal lattice of the GaN and the silicon substrate cause internal stresses that bow the wafer. To relieve these stresses, a pattern of trenches may be etched into the GaN layer between the die or device footprints. These trenches may be etched through the GaN layer, down to the depth of the silicon substrate, or even down into the silicon substrate. Instead of one singular, large wafer with internal stresses, the wafer may thus be divided into multiple small sections with minimal internal stresses. A dielectric gap fill may be applied to fill the trenches, and the resulting wafer may be planarized to expose the surface of the GaN after the gap fill.

公开(公告)号：US20230223256A1

公开(公告)日：2023-07-13

申请号：US17572963

申请日：2022-01-11

Applicant: Applied Materials, Inc.

Inventor： Amirhasan Nourbakhsh ,  Raman Gaire ,  Tyler Sherwood ,  Lan Yu ,  Roger Quon ,  Siddarth Krishnan

IPC: H01L21/02

CPC classification number: H01L21/02576 ,  H01L21/02579 ,  H01L21/02532

Abstract: Exemplary semiconductor processing methods may include forming a p-type silicon-containing material on a substrate including a first n-type silicon-containing material defining one or more features. The p-type silicon-containing material may extend along at least a portion of the one or more features defined in the first n-type silicon-containing material. The methods may include removing a portion of the p-type silicon-containing material. The portion of the p-type silicon-containing material may be removed from a bottom of the one or more features. The methods may include providing a silicon-containing material. The methods may include depositing a second n-type silicon-containing material on the substrate. The second n-type silicon-containing material may fill the one or more features formed in the first n-type silicon-containing material and may separate regions of remaining p-type silicon-containing material.