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公开(公告)号：US11973315B2
公开(公告)日：2024-04-30
申请号：US17706651
申请日：2022-03-29
Applicant: APPLE INC.
Inventor： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
CPC classification number: H01S5/18308 , H01S5/18358 , H01S5/18366 , H01S5/18369 , H01S5/3095 , H01S5/34313 , H01S5/426
Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.
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公开(公告)号：US20240106203A1
公开(公告)日：2024-03-28
申请号：US18078819
申请日：2022-12-09
Applicant: Apple Inc.
Inventor： Chin Han Lin , Yazan Z. Alnahhas , Fei Tan
Abstract: Embodiments of the disclosure relate to an optoelectronic device having an epitaxial stack, an array of laser emitters, and a thermal sensor. The epitaxial stack includes a set of epitaxial layers. The array of laser emitters is formed in the set of epitaxial layers. The thermal sensor is coupled to the epitaxial stack at a location adjacent to a laser emitter of the array of laser emitters. The optoelectronic device further includes a controller configured to receive an output of the thermal sensor and determine a temperature at a junction between an active region and an inactive region in the laser emitter by in-situ measurements.
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公开(公告)号：US20240079440A1
公开(公告)日：2024-03-07
申请号：US17903067
申请日：2022-09-06
Applicant: Apple Inc.
Inventor： Oray O. Cellek , Fei Tan , Gershon Rosenblum , Hong Wei Lee , Cheng-Ying Tsai , Jae Y. Park , Christophe Verove , John L Orlowski , Siddharth Joshi , Xiangli Li , David Coulon , Xiaofeng Fan , Keith Lyon , Nicolas Hotellier , Arnaud Laflaquière
IPC: H01L27/146 , H04N5/378
CPC classification number: H01L27/14652 , H01L27/14621 , H01L27/14636 , H01L27/1465 , H04N5/378
Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.
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公开(公告)号：US11543235B2
公开(公告)日：2023-01-03
申请号：US17219779
申请日：2021-03-31
Applicant: Apple Inc.
Inventor： Tong Chen , Fei Tan , Mingzhou Jin
Abstract: An optical sensor system including a semiconductor substrate; a self-mixing interferometry (SMI) sensor formed on the semiconductor substrate and including a semiconductor laser having a resonant cavity; and an array of photodetectors formed on the semiconductor substrate. The SMI sensor is configured to generate an SMI signal responsive to a retro-reflection of electromagnetic radiation emitted by the semiconductor laser and received into the resonant cavity. The array of photodetectors is configured to generate a set of angular-resolved scatter signals responsive to a scatter of the electromagnetic radiation emitted by the semiconductor laser.
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公开(公告)号：US20220224078A1
公开(公告)日：2022-07-14
申请号：US17706651
申请日：2022-03-29
Applicant: APPLE INC.
Inventor： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.
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Patent Agency Ranking
公开(公告)号：US11322910B2
公开(公告)日：2022-05-03
申请号：US16792317
申请日：2020-02-17
Applicant: APPLE INC.
Inventor： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
Abstract: An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.
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公开(公告)号：US20200274328A1
公开(公告)日：2020-08-27
申请号：US16792317
申请日：2020-02-17
Applicant: APPLE INC.
Inventor： Jae Y. Park , Arnaud Laflaquière , Christophe Vérove , Fei Tan
Abstract: An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.
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公开(公告)号：US20250102628A1
公开(公告)日：2025-03-27
申请号：US18763961
申请日：2024-07-03
Applicant: Apple Inc.
Inventor： Fei Tan , Pengfei Qiao , Alexander Hein , Chin Han Lin , Tong Chen , Takashi Hosoda , Arnaud Laflaquiere
Abstract: Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner. The light beam combiner also receives reflections from the object and detects distances and/or motion of the object based on the frequency modulations of the two light beams.
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公开(公告)号：US20240396301A1
公开(公告)日：2024-11-28
申请号：US18321016
申请日：2023-05-22
Applicant: APPLE INC.
Inventor： Pengfei Qiao , Chinhan Lin , Fei Tan , Alexander Hein
Abstract: An optoelectronic apparatus includes a semiconductor substrate, an electrically activated spatial light modulator disposed on the semiconductor substrate, and a vertical-cavity surface-emitting laser (VCSEL) disposed over the spatial light modulator on the semiconductor substrate. A controller is coupled to actuate the VCSEL to emit a beam of optical radiation and to control the spatial light modulator so as to modify an optical property of the beam.
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20.发明申请公开(公告)号：US20240372328A1
公开(公告)日：2024-11-07
申请号：US18143869
申请日：2023-05-05
Applicant: Apple Inc.
Inventor： Siddharth Joshi , Nicolas Hotellier , Fei Tan , Anne-Laure Bavencove , Chin-Han Lin , Arnaud Laflaquiere
Abstract: An optoelectronic device includes a silicon interposer and an array of resonant cavity mesas. The array of resonant cavity mesas is monolithically integrated in a set of one or more epitaxial layers and flip-chip bonded to the silicon interposer. The array of resonant cavity mesas includes a first subset of resonant cavity mesas connected to a first subset of conductors of the silicon interposer and biased to a first electrical polarity, and a second subset of resonant cavity mesas connected to a second subset of conductors of the silicon interposer. The second subset of resonant cavity mesas provides electrostatic discharge (ESD) protection for the first subset of resonant cavity mesas.
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