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1.发明申请公开(公告)号：US20250105594A1
公开(公告)日：2025-03-27
申请号：US18892108
申请日：2024-09-20
Applicant: Apple Inc.
Inventor： Pengfei Qiao , Fei Tan , Tong Chen , Qinghong Du , Siddharth Joshi , Nicolas Hotellier , Alexander Hein , Pierre-Antoine Delean
Abstract: Embodiments described herein include an optoelectronic sensing device having a vertical cavity surface emitting laser (VCSEL), a resonance cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partly defined by a first set of semiconductor layers disposed on a substrate. The first set of semiconductor layers includes a first active region. The VCSEL is configured to emit laser light towards the substrate, upon application of a first bias voltage, and undergo self-mixing interference upon reception of reflections or backscatters thereof. The RCPD is vertically adjacent to the VCSEL and is at least partly defined by a second set of semiconductor layers disposed on the substrate. The second set of semiconductor layers includes a second active region. The RCPD is configured to detect, upon application of a second bias voltage, the self-mixing interference. The tunnel junction is disposed between the first active region and the second active region.
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Patent Agency Ranking
公开(公告)号：US20240305063A1
公开(公告)日：2024-09-12
申请号：US18423005
申请日：2024-01-25
Applicant: Apple Inc.
Inventor： Pengfei Qiao , James J. Dudley , Tong Chen
CPC classification number: H01S5/18361 , H01S5/11 , H01S5/18313
Abstract: An optoelectronic device may include a first set of distributed Bragg reflective (DBR) layers, a second set of DBR layers, a gain region, and an enclosure layer between the gain region and the second set of DBR layers. In some cases, the enclosure layer defines a non-limiting mode oxide aperture. The optoelectronic device may also include a high contrast grating (HCG) mirror element disposed on a side of the second set of DBR layers. In some cases, the HCG mirror element has a first reflection coefficient that is greater than a second reflection coefficient of the second set of DBR layers. Another optoelectronic device may include a photonic crystal (PhC) mirror layer and a gain region disposed between the PhC mirror layer and a set of DBR layers.
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公开(公告)号：US20250102628A1
公开(公告)日：2025-03-27
申请号：US18763961
申请日：2024-07-03
Applicant: Apple Inc.
Inventor： Fei Tan , Pengfei Qiao , Alexander Hein , Chin Han Lin , Tong Chen , Takashi Hosoda , Arnaud Laflaquiere
Abstract: Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner. The light beam combiner also receives reflections from the object and detects distances and/or motion of the object based on the frequency modulations of the two light beams.
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公开(公告)号：US20240396301A1
公开(公告)日：2024-11-28
申请号：US18321016
申请日：2023-05-22
Applicant: APPLE INC.
Inventor： Pengfei Qiao , Chinhan Lin , Fei Tan , Alexander Hein
Abstract: An optoelectronic apparatus includes a semiconductor substrate, an electrically activated spatial light modulator disposed on the semiconductor substrate, and a vertical-cavity surface-emitting laser (VCSEL) disposed over the spatial light modulator on the semiconductor substrate. A controller is coupled to actuate the VCSEL to emit a beam of optical radiation and to control the spatial light modulator so as to modify an optical property of the beam.
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公开(公告)号：US20240006858A1
公开(公告)日：2024-01-04
申请号：US18142812
申请日：2023-05-03
Applicant: Apple Inc.
Inventor： Tong Chen , Pengfei Qiao , Fei Tan
CPC classification number: H01S5/423 , H01S5/18394 , H01S5/0262 , H01S5/34313
Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors that include a multi-junction (MJ) vertical-cavity surface-emitting laser (VCSEL) diode that emits laser light in two directions, one direction being directed toward a receiving photodiode and another toward an object. Reflections from the object induce self-mixing interference within a resonance cavity of the MJ-VCSEL altering a wavelength of the emitted laser light. The SMI may infer distance and/or motion of the object from the alterations in the wavelength. In various embodiments, the MJ-VCSEL and photodiode are successively formed as a single unit upon a single substrate. In other embodiments, the MJ-VCSEL and the photodiode may be formed on separate wafers or chips that are then joined at a common interface surface. Arrays of combinations of MJ-VCSELs and associated photodiodes may be included in an SMI.
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公开(公告)号：US20230089141A1
公开(公告)日：2023-03-23
申请号：US17480704
申请日：2021-09-21
Applicant: Apple Inc.
Inventor： Tong Chen , Ahmet Fatih Cihan , Edward Vail , Weiping Li , Xiaolong Fang , Xibin Zhou , Pengfei Qiao
Abstract: Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.
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