公开(公告)号：US20240249909A1

公开(公告)日：2024-07-25

申请号：US18099169

申请日：2023-01-19

Applicant: Applied Materials Israel Ltd.

Inventor： Yehuda Zur ,  Konstantin Chirko

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/305

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/222 ,  H01J37/3056 ,  H01J2237/31749

Abstract: A method of evaluating, with an evaluation tool that includes a first charged particle column, a region of interest on a sample that includes an array of holes separated by solid portions, the method comprising: positioning the sample such that the region of interest is under a field of view of the first charged particle column; and locally depositing material within the array of holes in the region of interest by: pulsing a flow of deposition gas to the region of interest by turning the flow of the deposition gas ON and then OFF; thereafter, scanning a charged particle beam generated by the first charged particle column across the region of interest; and iteratively repeating the pulsing and scanning steps a plurality of times to locally deposit material within the array of holes in the region of interest.

公开(公告)号：US20240105421A1

公开(公告)日：2024-03-28

申请号：US17950960

申请日：2022-09-22

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Yehuda Zur

IPC: H01J37/317 ,  C23C14/04 ,  C23C14/18 ,  C23C14/22 ,  H01J37/147 ,  H01J37/30 ,  H01L21/285

CPC classification number: H01J37/3178 ,  C23C14/048 ,  C23C14/18 ,  C23C14/221 ,  H01J37/1474 ,  H01J37/3005 ,  H01L21/28568 ,  H01J2237/006 ,  H01J2237/31749

Abstract: A method of depositing material over a localized region of a sample comprising: positioning a sample within a vacuum chamber such that the localized region is under a field of view of a charged particle beam column; injecting a deposition precursor gas, with a gas injection nozzle, into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with the charged particle beam column and focusing the charged particle beam within the deposition region of the sample; and scanning the charged particle beam across the deposition region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region; and applying a negative bias voltage to the gas injection nozzle while the focused ion beam is scanned across the deposition region to alter a trajectory of the secondary electrons and repel the secondary electrons back to the sample surface.

公开(公告)号：US20240062990A1

公开(公告)日：2024-02-22

申请号：US17891028

申请日：2022-08-18

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Sean Kashy ,  Yehuda Zur

IPC: H01J37/317 ,  H01L21/285 ,  C23C16/48 ,  C23C16/16

CPC classification number: H01J37/3178 ,  H01L21/28568 ,  C23C16/486 ,  C23C16/16 ,  H01J2237/026 ,  H01J2237/006

Abstract: A system for depositing material over a sample in a localized region of the sample, the system including: a vacuum chamber; a thermal mass disposed outside the vacuum chamber; a sample support configured to hold a sample within the vacuum chamber during a sample evaluation process; a charged particle beam column configured to direct a charged particle beam into the vacuum chamber toward the sample such that the charged particle beam collides with the sample in a deposition region; a gas injection system configured to deliver a process gas to the deposition region of the sample; and a thermal isolation shield spaced apart from and disposed between the gas injection system and the sample, wherein the thermal isolation shield has a high thermal conductivity and a low emissivity and is thermally coupled to the thermal mass to transfer heat radiated from the gas injection system to the thermal mass.

公开(公告)号：US11626267B2

公开(公告)日：2023-04-11

申请号：US17243478

申请日：2021-04-28

Applicant: Applied Materials Israel Ltd.

Inventor： Yehuda Zur ,  Igor Petrov

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/20 ,  H01J37/18

Abstract: A method of evaluating a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an electron beam with a scanning electron microscope (SEM) column that includes an electron gun at one end of the column and a column cap at an opposite end of the column; focusing the electron beam on the sample and scanning the focused electron beam across the region of the sample, while the SEM column is operated in tilted mode, thereby generating secondary electrons and backscattered electrons from within the region; and during the scanning, collecting backscattered electrons with one or more detectors while applying a negative bias voltage to the column cap to alter a trajectory of the secondary electrons preventing the secondary electrons from reaching the one or more detectors.

公开(公告)号：US20230057148A1

公开(公告)日：2023-02-23

申请号：US17408876

申请日：2021-08-23

Applicant: Applied Materials Israel Ltd.

Inventor： Ilya Blayvas ,  Yehuda Zur

IPC: H01J37/302 ,  H01L21/66 ,  H01J37/28 ,  H01J37/305

Abstract: Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

公开(公告)号：US20230019567A1

公开(公告)日：2023-01-19

申请号：US17378999

申请日：2021-07-19

Applicant: Applied Materials Israel Ltd.

Inventor： Alexander Mairov ,  Gal Bruner ,  Yehuda Zur

IPC: G01B15/02

Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.

公开(公告)号：US20220367146A1

公开(公告)日：2022-11-17

申请号：US17320526

申请日：2021-05-14

Applicant: Applied Materials Israel Ltd.

Inventor： Yehuda Zur ,  Alon Litman

IPC: H01J37/244 ,  H01J37/22 ,  G01N23/2252 ,  G01N23/2202

Abstract: A method of performing x-ray spectroscopy material analysis of a region of interest within a cross-section of a sample using an evaluation system that includes a focused ion beam (FIB) column, a scanning electron microscope (SEM) column, and an x-ray detector, including: forming a lamella having first and second opposing side surfaces in the sample by milling, with the FIB column, first and second trenches in the sample to expose the first and second sides surface of the lamella, respectively; depositing background material in the second trench, wherein the background material is selected such that the background material does not include any chemical elements that are expected to be within the region of interest of the sample; generating a charged particle beam with the SEM column and scanning the charged particle beam across a region of interest on the first side surface of the lamella such that the charged particle beam collides with the first side surface of the lamella at a non-vertical angle; and detecting x-rays generated while the region of interest is scanned by the charged particle beam.

公开(公告)号：US11280749B1

公开(公告)日：2022-03-22

申请号：US17079297

申请日：2020-10-23

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Yehuda Zur ,  Alexander Mairov

IPC: G01N23/2251 ,  H01J37/305 ,  H01J37/20 ,  H01J37/28 ,  H01J37/30

Abstract: A method of evaluating a region of a sample that includes a plurality of holes, wherein the method includes: taking a first image of the region by scanning the region with a first charged particle beam; evaluating the first image to determine a first center-to-center distance between first and second holes in the plurality of holes; milling a diagonal cut in an area within the region that includes the second hole at an angle such that an upper surface of the sample in the milled area where the second hole is located is recessed with respect to an upper surface of the sample where the first hole is located; thereafter, taking a second image of the region by scanning the region with the first charged particle beam; evaluating the second image to determine a second center-to-center distance between first and second holes in the plurality of holes; and comparing the second center-to-center distance to the first center-to-center distance.

公开(公告)号：US12033831B2

公开(公告)日：2024-07-09

申请号：US17408876

申请日：2021-08-23

Applicant: Applied Materials Israel Ltd.

Inventor： Ilya Blayvas ,  Yehuda Zur

IPC: H01J37/302 ,  H01J37/28 ,  H01J37/305 ,  H01L21/66

CPC classification number: H01J37/3023 ,  H01J37/28 ,  H01J37/305 ,  H01L22/12 ,  H01J2237/24578 ,  H01J2237/24585 ,  H01J2237/2814 ,  H01J2237/31749

Abstract: Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

公开(公告)号：US20240153738A1

公开(公告)日：2024-05-09

申请号：US17983225

申请日：2022-11-08

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Yehuda Zur

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2815

Abstract: A method of determining the depth of a hole milled into a first region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; depositing material directly over a top surface of the sample in a second region of the sample adjacent to the first region; milling the hole in the first region of the sample using a charged particle beam generated by the charged particle beam column, wherein the hole abuts the material deposited over the top surface and includes a sidewall that extends from a bottom surface of the hole to an interface between the deposited material and the top surface of the sample; and using stereoscopic measurement techniques to calculate the depth of the hole based on distance measurements between a first point along an interface between the material and the top surface and a second point along a bottom surface of the hole.