公开(公告)号：US20220262643A1

公开(公告)日：2022-08-18

申请号：US17179103

申请日：2021-02-18

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Sarah Michelle BOBEK ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Dimitri KIOUSSIS ,  Karthik JANAKIRAMAN

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/67

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

公开(公告)号：US20210327713A1

公开(公告)日：2021-10-21

申请号：US16853283

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan MIN ,  Lu XU ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE

IPC: H01L21/033 ,  H01L21/02

Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.

公开(公告)号：US20210082696A1

公开(公告)日：2021-03-18

申请号：US16971239

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan MIN ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Vinay K. PRABHAKAR

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/02

Abstract: A method of and system for substrate fabrication is disclosed herein. The method includes performing a first plasma-enhanced surface treatment in a chamber prior to disposal of a substrate, then, subsequently, depositing a season material in the process chamber. After depositing the plurality of season materials in the process chamber, a substrate is disposed in the chamber. The substrate is positioned in the process chamber in contact with the season material. A substrate treatment is performed. The substrate treatment can include one or more of: performing a second plasma-enhanced surface treatment, forming a barrier layer on the substrate, or performing a low frequency RF treatment prior to forming a metal-based hardmask film on the substrate. The metal-based hardmask film includes one or more metals.

公开(公告)号：US20190355609A1

公开(公告)日：2019-11-21

申请号：US16440513

申请日：2019-06-13

Applicant: Applied Materials, Inc.

Inventor： Prashant KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Zheng John YE ,  Swayambhu Prasad BEHERA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Jian J. CHEN

IPC: H01L21/683

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

公开(公告)号：US20190341227A1

公开(公告)日：2019-11-07

申请号：US16403489

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Sarah Michelle BOBEK ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C16/509 ,  C23C16/46

Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.

公开(公告)号：US20190122889A1

公开(公告)日：2019-04-25

申请号：US16219557

申请日：2018-12-13

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

IPC: H01L21/033 ,  C23C16/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/505

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US20180330951A1

公开(公告)日：2018-11-15

申请号：US15977388

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Jiarui WANG ,  Kwangduk Douglas LEE ,  Milind GADRE ,  Xiaoquan MIN ,  Paul CONNORS

IPC: H01L21/225 ,  G03F1/38

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

公开(公告)号：US20170178758A1

公开(公告)日：2017-06-22

申请号：US15369219

申请日：2016-12-05

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Paul CONNORS ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Ziqing DUAN ,  Nicolas J. BRIGHT ,  Feng BI

IPC: G21F3/00 ,  C23C16/458 ,  C23C16/50 ,  C23C16/448

CPC classification number: C23C16/448 ,  C23C16/50 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.

公开(公告)号：US20250022709A1

公开(公告)日：2025-01-16

申请号：US18899930

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/46 ,  C23C16/505 ,  H01L21/02

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C. and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300° C. to about 700° C. and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 Å/min, such as up to about 10,000 Å/min or faster.

公开(公告)号：US20230272525A1

公开(公告)日：2023-08-31

申请号：US18143648

申请日：2023-05-05

Applicant: Applied Materials, Inc.

Inventor： Sarah Michelle BOBEK ,  Abdul Aziz KHAJA ,  Ratsamee LIMDULPAIBOON ,  Kwangduk Douglas LEE

IPC: C23C16/44 ,  C23C16/32

CPC classification number: C23C16/4404 ,  C23C16/325 ,  H01L21/0337

Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.