公开(公告)号：US20250022709A1

公开(公告)日：2025-01-16

申请号：US18899930

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/46 ,  C23C16/505 ,  H01L21/02

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C. and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300° C. to about 700° C. and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 Å/min, such as up to about 10,000 Å/min or faster.

公开(公告)号：US20230170190A1

公开(公告)日：2023-06-01

申请号：US18102055

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01J37/32715 ,  H01J37/32082 ,  H01L21/6831 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01L21/02274 ,  H01L21/02636 ,  H01L21/28506 ,  H01J2237/2007 ,  H01J2237/332

Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

公开(公告)号：US20190341232A1

公开(公告)日：2019-11-07

申请号：US16391996

申请日：2019-04-23

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

公开(公告)号：US20190341227A1

公开(公告)日：2019-11-07

申请号：US16403489

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Satya THOKACHICHU ,  Edward P. HAMMOND, IV ,  Viren KALSEKAR ,  Zheng John YE ,  Sarah Michelle BOBEK ,  Abdul Aziz KHAJA ,  Vinay K. PRABHAKAR ,  Venkata Sharat Chandra PARIMI ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C16/509 ,  C23C16/46

Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.