公开(公告)号：US11185815B2

公开(公告)日：2021-11-30

申请号：US16030337

申请日：2018-07-09

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Monique McIntosh ,  Colin John Dickinson ,  Paul E. Fisher ,  Yutaka Tanaka ,  Zheng Yuan

IPC: H05H1/24 ,  B01D53/32 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01J19/08 ,  H01J37/32 ,  B01D53/54

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

公开(公告)号：US10920315B2

公开(公告)日：2021-02-16

申请号：US16368170

申请日：2019-03-28

Applicant: Applied Materials, Inc.

Inventor： Colin John Dickinson

IPC: C23C16/44 ,  H01J37/32

Abstract: The present disclosure relates to methods and apparatus for treating vacuum processing system exhaust gases. In addition, methods and apparatus for maintenance of foreline plasma reactor subsystems are disclosed. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a vacuum processing system includes a plasma source coupled with a foreline of a process chamber, a treatment agent source coupled with the plasma source, and a downstream trap to cool an exhaust stream and trap particles in the exhaust stream. In some embodiments, multiple foreline plasma reactor subsystems are used with a vacuum processing system, and one foreline plasma reactor subsystem can be isolated and maintained (e.g., cleaned) while exhaust gas treatment continues in another foreline plasma reactor subsystem and processing continues in the vacuum processing system.

公开(公告)号：US09597634B2

公开(公告)日：2017-03-21

申请号：US14300372

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Colin John Dickinson ,  Mehran Moalem ,  Daniel O. Clark

IPC: B01D53/92 ,  B01D53/32

CPC classification number: B01D53/32 ,  B01D53/92 ,  B01D2258/0216 ,  B01D2259/122 ,  B01D2259/80 ,  B01D2259/818 ,  C23C16/4412

Abstract: Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, an apparatus for treating an exhaust gas in a foreline of a substrate processing system includes a plasma source coupled to a foreline of a process chamber, a reagent source coupled to the foreline upstream of the plasma source, and a foreline gas injection kit coupled to the foreline to controllably deliver a gas to the foreline, wherein the foreline injection kit includes a pressure regulator to set a foreline gas delivery pressure setpoint, and a first pressure gauge coupled to monitor a delivery pressure of the gas.

公开(公告)号：US09240308B2

公开(公告)日：2016-01-19

申请号：US14498920

申请日：2014-09-26

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: C23C16/54 ,  H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US10685818B2

公开(公告)日：2020-06-16

申请号：US16110803

申请日：2018-08-23

Applicant: Applied Materials, Inc.

Inventor： Colin John Dickinson

IPC: H01J37/32 ,  B01D53/68 ,  B01D53/32

Abstract: Implementations of the present disclosure relate to systems and techniques for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. The water and oxygen delivery system comprises a housing that includes a floor and a plurality of sidewalls that define an enclosed region. The water and oxygen delivery system further comprises a cylindrical water tank positioned on the floor, wherein a longitudinal axis of the cylindrical water tank is parallel to a plane defined by the floor and a length of the water tank is 1.5 times or greater than the diameter of the cylindrical water tank. The water and oxygen delivery system further comprises a flow control system positioned within the housing above the cylindrical water tank.

公开(公告)号：US10176973B2

公开(公告)日：2019-01-08

申请号：US15411711

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: B01D53/64 ,  B01D53/68 ,  H01J37/32 ,  B01D53/32 ,  H01L21/02

Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

公开(公告)号：US10115571B2

公开(公告)日：2018-10-30

申请号：US14696955

申请日：2015-04-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Colin John Dickinson

IPC: H01J37/32

Abstract: Apparatus and methods that provide a reagent gas in a foreline abatement system are provided herein. In some embodiments, a reagent delivery system includes a water tank having an inner volume that holds a reagent liquid when disposed therein, and a heat exchanger having a central opening disposed in the inner volume and configured to keep a top surface of the reagent liquid from freezing when reagent liquid is disposed within the water tank.

公开(公告)号：US09649592B2

公开(公告)日：2017-05-16

申请号：US14638871

申请日：2015-03-04

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Monique McIntosh ,  Colin John Dickinson ,  Paul E. Fisher ,  Yutaka Tanaka ,  Zheng Yuan

IPC: B01D53/32 ,  B01D53/64 ,  B01J19/08

CPC classification number: B01D53/32 ,  B01D53/54 ,  B01D53/64 ,  B01D53/70 ,  B01D53/76 ,  B01D2251/00 ,  B01D2251/10 ,  B01D2251/102 ,  B01D2251/104 ,  B01D2251/108 ,  B01D2251/20 ,  B01D2251/202 ,  B01D2251/204 ,  B01D2251/2062 ,  B01D2251/208 ,  B01D2251/502 ,  B01D2252/103 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2257/60 ,  B01D2257/7025 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0815 ,  B01J2219/0875 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32669 ,  H01J2237/002 ,  H01J2237/335 ,  Y02C20/20 ,  Y02C20/30

Abstract: A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH4, H2O, H2, NF3, SF6, F2, HCl, HF, Cl2, and HBr. Representative condensing abating reagents include, for example, H2, H2O, O2, N2, O3, CO, CO2, NH3, N2O, CH4, and combinations thereof.

公开(公告)号：US09552967B2

公开(公告)日：2017-01-24

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: H01L21/465 ,  H01J37/32 ,  B01D53/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US09230780B2

公开(公告)日：2016-01-05

申请号：US14199974

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

IPC: C23C16/54 ,  H01J37/32 ,  H01J37/16

CPC classification number: H01J37/3266 ,  H01J37/165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32844 ,  H01J2237/002 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/334 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。