公开(公告)号：US07902577B2

公开(公告)日：2011-03-08

申请号：US11872308

申请日：2007-10-15

Applicant: Jin Yeong Kang ,  Sang Heung Lee ,  Jin Gun Koo

Inventor： Jin Yeong Kang ,  Sang Heung Lee ,  Jin Gun Koo

IPC: H01L31/11

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14681

Abstract: Provided is an image sensor having a heterojunction bipolar transistor (HBT) and a method of fabricating the same. The image sensor is fabricated by SiGe BiCMOS technology. In the image sensor, a PD employs a floating-base-type SiGe HBT. A floating base of the SiGe HBT produces a positive voltage with respect to a collector during an exposure process, and the HBT performs a reverse bipolar operation due to the positive voltage so that the collector and an emitter exchange functions. The SiGe HBT can sense an optical current signal and also amplify the optical current signal. The image sensor requires only three transistors in a pixel so that the degree of integration can increase. The image sensor has an improved sensitivity of signals in the short wavelength region and a sensing signal has excellent linearity such that both a sensing mechanism and control circuit are very simple.

Abstract translation: 提供了具有异质结双极晶体管（HBT）的图像传感器及其制造方法。 图像传感器由SiGe BiCMOS技术制造。 在图像传感器中，PD采用浮动型SiGe HBT。 SiGe HBT的浮动基极在曝光过程中产生相对于集电极的正电压，HBT由于正电压而执行反向双极性操作，从而集电极和发射极交换功能起作用。 SiGe HBT可以感测光电流信号，并且还可以放大光电流信号。 图像传感器在像素中仅需要三个晶体管，使得集成度可以增加。 图像传感器在短波长区域具有改善的信号灵敏度，并且感测信号具有优异的线性度，使得感测机构和控制电路都非常简单。

公开(公告)号：US20110037521A1

公开(公告)日：2011-02-17

申请号：US12855055

申请日：2010-08-12

Applicant: Dong Min KANG ,  Hong Gu JI ,  Hokyun AHN ,  Jong-Won LIM ,  Woojin CHANG ,  Sang-Heung LEE ,  Dong-Young KIM ,  Hae Cheon KIM

Inventor： Dong Min KANG ,  Hong Gu JI ,  Hokyun AHN ,  Jong-Won LIM ,  Woojin CHANG ,  Sang-Heung LEE ,  Dong-Young KIM ,  Hae Cheon KIM

IPC: H03F3/04

CPC classification number: H03F3/24 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/222

Abstract: Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.

Abstract translation: 提供了一种功率放大器，包括：耗尽型高电子迁移率晶体管（D模式HEMT），被配置为放大输入到栅极端子的信号，并通过漏极端子输出放大的信号; 输入匹配电路，被配置为使所述栅极端子串联接地; 以及连接在漏极端子和地之间的DC偏置电路。 通过上述配置，HEMT可以仅由单个DC偏置电路偏压而没有任何偏置装置来提供负电压。 此外，可以通过并联电感器和扼流电感器在各种工作频带中提供优异的匹配特性。

公开(公告)号：US20100133551A1

公开(公告)日：2010-06-03

申请号：US12421130

申请日：2009-04-09

Applicant: Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae-Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

Inventor： Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae-Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

IPC: H01L31/147 ,  H01L33/00

CPC classification number: H01L25/167 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/30107 ,  H01L2924/00

Abstract: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

Abstract translation: 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅（SOI））衬底上的第一半导体芯片，发光体，光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号，将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。

公开(公告)号：US07554416B2

公开(公告)日：2009-06-30

申请号：US11542288

申请日：2006-10-02

Applicant: Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee ,  Kyoung Ik Cho

Inventor： Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee ,  Kyoung Ik Cho

IPC: H03B7/06 ,  H03C3/22 ,  H03L1/00

CPC classification number: H03B5/1228 ,  H03B5/1215 ,  H03B5/1243 ,  H03B5/1265 ,  H03B5/1271 ,  H03B2201/0208 ,  H03B2201/0266 ,  H03J2200/10

Abstract: Provided is an LC resonance voltage-controlled oscillator (VCO) used for a multi-band multi-mode wireless transceiver. In order to generate a multi-band frequency, a capacitor bank and a switchable inductor are included in the LC resonance voltage-controlled oscillator. The LC resonance voltage-controlled oscillator employs an adjustable emitter-degeneration negative resistance cell in place of tail current sources in order to compensate for non-uniform oscillation amplitude caused by the capacitor bank and prevent the degradation of a phase noise due to the tail current sources. The LC resonance voltage-controlled oscillator includes an inductor providing an inductance element partially determining the frequency of an oscillation wave; a discrete capacitor bank providing a capacitance element partially determining the frequency of the oscillation wave and being discretely determined by a control bit signal; and a discrete negative resistance cell providing a negative resistance element that is discretely determined by the control bit signal, to keep the amplitude of the oscillation wave constant.

Abstract translation: 提供了一种用于多频带多模无线收发器的LC谐振压控振荡器（VCO）。 为了产生多频带频率，LC谐振压控振荡器中包括电容器组和可切换电感器。 LC谐振压控振荡器代替尾电流源采用可调发射极 - 退化负电阻电池，以补偿由电容器组引起的不均匀振荡幅度，并防止由于尾电流导致的相位噪声的降低 来源。 LC谐振电压控制振荡器包括：电感器，其提供部分地确定振荡波频率的电感元件; 分立电容器组，提供部分地确定振荡波的频率并由控制位信号离散地确定的电容元件; 以及提供由控制位信号离散地确定的负电阻元件的离散负电阻单元，以保持振荡波的幅度恒定。

公开(公告)号：US07461235B2

公开(公告)日：2008-12-02

申请号：US11144703

申请日：2005-06-06

Applicant: Yil Suk Yang ,  Tae Moon Roh ,  Dae Woo Lee ,  Sang Heung Lee ,  Jong Dae Kim

Inventor： Yil Suk Yang ,  Tae Moon Roh ,  Dae Woo Lee ,  Sang Heung Lee ,  Jong Dae Kim

IPC: G06F15/76 ,  G06F1/32

CPC classification number: G06F9/3885 ,  G06F1/32 ,  G06F1/3287 ,  G06F9/30141 ,  G06F9/30156 ,  G06F9/3822 ,  G06F9/3824 ,  Y02D10/171

Abstract: Provided is a parallel data path architecture for high energy efficiency. In this architecture, a plurality of parallel process units and a plurality of function units of the process units are controlled by instructions and processed in parallel to improve performance. Also, since only necessary process units and function units are enabled, power dissipation is reduced to enhance energy efficiency. Further, by use of a simple instruction format, hardware can be programmed as the parallel data path architecture for high energy efficiency, which satisfies both excellent performance and low power dissipation, thus elevating hardware flexibility.

Abstract translation: 提供了一种用于高能效的并行数据路径架构。 在该架构中，处理单元的多个并行处理单元和多个功能单元由指令控制并且并行处理以提高性能。 此外，由于只需要必要的处理单元和功能单元，所以功耗降低以提高能量效率。 此外，通过使用简单的指令格式，可以将硬件编程为用于高能量效率的并行数据路径体系结构，其既能满足优异性能又具有低功耗，从而提高硬件灵活性。

公开(公告)号：US07414488B2

公开(公告)日：2008-08-19

申请号：US11518233

申请日：2006-09-11

Applicant: Ja Yol Lee ,  Sang Heung Lee

Inventor： Ja Yol Lee ,  Sang Heung Lee

IPC: H03B5/04

CPC classification number: H03B5/1231 ,  H03B5/1212 ,  H03B5/1243 ,  H03B2200/0074

Abstract: A differential voltage controlled oscillator (VCO) employed in a frequency synthesizer used as a local oscillator of a wireless communication on-chip transmitter/receiver is provided. More particularly, a differential current negative feedback VCO equipped with a current-current negative feedback circuit that suppresses low- and high-frequency noise is provided.A differential current negative feedback VCO includes a resonator determining oscillation frequency, and an oscillator generating negative resistance. In the oscillator of the differential current negative feedback VCO, transistors Q1 and Q2 form a cross-coupled pair, and negative resistance is generated by positive feedback of the cross-coupled pair. And, transistors Q1 and Q3 together with an emitter resistor and a capacitor form a current negative feedback part, and transistors Q2 and Q4 together with an emitter resistor and a capacitor form another current negative feedback part which is disposed opposite to a resonator. Thus, the VCO operates differentially.In the oscillator of the differential current negative feedback VCO, emitter noise currents generated by base noise voltages of Q1 and Q2 induced by low- and high-frequency noise sources in the bases of Q1 and Q2 are sampled by emitter resistors, amplified through bases of Q3 and Q4, and thus return to the bases of the Q1 and Q2 and suppress the base noise voltages. Measurement of the phase noise of the differential current negative feedback VCO reveals a phase noise reduction of approximately 25 dB compared to a conventional differential VCO.

Abstract translation: 提供了用作无线通信片上发送器/接收器的本地振荡器的频率合成器中使用的差分压控振荡器（VCO）。 更具体地，提供了配备有抑制低频和高频噪声的电流 - 电流负反馈电路的差动电流负反馈VCO。 差分电流负反馈VCO包括确定振荡频率的谐振器和产生负电阻的振荡器。 在差动电流负反馈VCO的振荡器中，晶体管Q 1和Q 2形成交叉耦合对，负电阻由交叉耦合对的正反馈产生。 并且，晶体管Q 1和Q 3与发射极电阻器和电容器一起形成电流负反馈部分，并且晶体管Q 2和Q 4与发射极电阻器和电容器一起形成另一个电流负反馈部分，其与 谐振器。 因此，VCO差分工作。 在差动电流负反馈VCO的振荡器中，由Q 1和Q 2基极引起的低频和高频噪声源引起的基本噪声电压Q 1和Q 2产生的发射极噪声电流由发射极电阻进行采样， 通过Q 3和Q 4的基极放大，从而返回Q 1和Q 2的基极并抑制基极噪声电压。 差分电流负反馈VCO的相位噪声的测量与常规差分VCO相比，相位噪声降低约25 dB。

公开(公告)号：US07170355B2

公开(公告)日：2007-01-30

申请号：US10957749

申请日：2004-10-05

Applicant: Ja Yol Lee ,  Sang Heung Lee ,  Jin Yeong Kang ,  Seung Hyeub Oh

Inventor： Ja Yol Lee ,  Sang Heung Lee ,  Jin Yeong Kang ,  Seung Hyeub Oh

IPC: H03B1/00

CPC classification number: H03B5/1231 ,  H03B5/1215 ,  H03B5/1221 ,  H03B5/1243

Abstract: Provided is a voltage-controlled oscillator (VCO) using a current feedback network for use in a wireless communication terminal. The voltage-controlled oscillator has high input impedance and low output impedance, so that a degree of isolation from the external load is excellent, thereby preventing degradation of the Q-factor by the load in overall oscillation circuit. In the voltage-controlled oscillator of the present invention, an LC resonator is provided to generate positive feedback, and negative resistance may be obtained at a wider frequency range by tuning a varactor of the LC resonator. And a boosting inductor is inserted into the positive feedback loop to have a greater negative resistance, therefore it is possible to prevent a problem in which the oscillation does not occur due to the parasitic resistance components generated during circuit fabrication.

Abstract translation: 提供了一种使用电流反馈网络在无线通信终端中使用的压控振荡器（VCO）。 压控振荡器具有高输入阻抗和低输出阻抗，使得与外部负载的隔离度优异，从而防止整个振荡电路中的负载对Q因子的劣化。 在本发明的压控振荡器中，设置LC谐振器以产生正反馈，并且通过调谐LC谐振器的变容二极管可以在更宽的频率范围内获得负电阻。 并且将增压电感器插入到正反馈回路中以具有更大的负电阻，因此可以防止由于在电路制造期间产生的寄生电阻分量而不发生振荡的问题。

公开(公告)号：US08586462B2

公开(公告)日：2013-11-19

申请号：US13307069

申请日：2011-11-30

Applicant: Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L29/808 ,  H01L21/283

CPC classification number: H01L29/7831 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7787 ,  H01L29/812

Abstract: Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

Abstract translation: 公开了一种制造场效晶体管的方法。 所公开的方法包括：提供半导体衬底; 在半导体衬底的一侧上形成源极欧姆金属层; 在所述半导体衬底的另一侧上形成漏极欧姆金属层; 在所述源欧姆金属层和所述漏极欧姆金属层之间形成栅电极，在所述半导体衬底的上部; 在包括源欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上形成绝缘膜; 以及在绝缘膜的上部形成多个场电极，其中各个场电极下方的绝缘膜具有不同的厚度。

公开(公告)号：US20130134554A1

公开(公告)日：2013-05-30

申请号：US13618873

申请日：2012-09-14

Applicant: Seong-il KIM ,  Sang-Heung LEE ,  Jong-Won LIM ,  Hyung Sup YOON ,  Jongmin LEE ,  Byoung-Gue MIN ,  Jae Kyoung MUN ,  Eun Soo NAM

Inventor： Seong-il KIM ,  Sang-Heung LEE ,  Jong-Won LIM ,  Hyung Sup YOON ,  Jongmin LEE ,  Byoung-Gue MIN ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC: H01L29/92 ,  H01L21/02

CPC classification number: H01L28/91 ,  H01L23/481 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.

Abstract translation: 提供垂直电容器及其形成方法。 垂直电容器的形成可以包括在衬底的顶表面上形成输入和输出电极，蚀刻衬底的底表面以形成通孔电极，然后在通孔电极之间形成电介质层。 结果，可以在基板的小区域中提供具有高电容的垂直电容器。

公开(公告)号：US08294521B2

公开(公告)日：2012-10-23

申请号：US12855055

申请日：2010-08-12

Applicant: Dong Min Kang ,  Hong Gu Ji ,  Hokyun Ahn ,  Jong-Won Lim ,  Woojin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Hae Cheon Kim

Inventor： Dong Min Kang ,  Hong Gu Ji ,  Hokyun Ahn ,  Jong-Won Lim ,  Woojin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Hae Cheon Kim

IPC: H03F3/04

CPC classification number: H03F3/24 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/222

Abstract: Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.

Abstract translation: 提供了一种功率放大器，包括：耗尽型高电子迁移率晶体管（D模式HEMT），被配置为放大输入到栅极端子的信号，并通过漏极端子输出放大的信号; 输入匹配电路，被配置为使所述栅极端子串联接地; 以及连接在漏极端子和地之间的DC偏置电路。 通过上述配置，HEMT可以仅由单个DC偏置电路偏压而没有任何偏置装置来提供负电压。 此外，可以通过并联电感器和扼流电感器在各种工作频带中提供优异的匹配特性。