Imaging resolution recovery techniques
    14.
    发明授权
    Imaging resolution recovery techniques 有权
    成像分辨率恢复技术

    公开(公告)号:US08553960B2

    公开(公告)日:2013-10-08

    申请号:US12541417

    申请日:2009-08-14

    IPC分类号: G06K9/00 G06K9/62

    CPC分类号: G06T11/005

    摘要: One embodiment is a unique method employing an improved image resolution recovery technique. Another embodiment is a unique system implementing an improved image resolution recovery technique. A further embodiment is a method including obtaining a sinogram based upon a measurement of an imaging system, processing the sinogram using a smoothing or fitting technique, deconvolving a system response function of the imaging system from the sinogram to provide a deconvolved sinogram, and constructing an image based upon the deconvolved sinogram. Further embodiments, forms, objects, features, advantages, aspects, and benefits shall become apparent from the following description and drawings.

    摘要翻译: 一个实施例是采用改进的图像分辨率恢复技术的独特方法。 另一个实施例是实现改进的图像分辨率恢复技术的独特系统。 另一实施例是一种方法,包括基于成像系统的测量获得正弦图,使用平滑或拟合技术处理正弦图,从正弦图解卷积成像系统的系统响应函数以提供解卷积的正弦图,以及构造 基于去卷积正弦图的图像。 从以下说明和附图,其他实施例,形式,目的,特征,优点,方面和优点将变得显而易见。

    Depositing Coatings In Long Hollow Substrates Using A Heated Center Electrode
    15.
    发明申请
    Depositing Coatings In Long Hollow Substrates Using A Heated Center Electrode 有权
    使用加热中心电极在长的中空基板上沉积涂层

    公开(公告)号:US20120231177A1

    公开(公告)日:2012-09-13

    申请号:US13046181

    申请日:2011-03-11

    IPC分类号: C23C14/48 C23C16/503

    摘要: A method and system for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein. The method and system may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface.

    摘要翻译: 一种用于等离子体浸没离子处理的方法和系统,包括提供具有限定内部的内表面的中空基板和延伸穿过内部的气体供给管,其中气体供给管是中空的并且包括其中限定有多个孔的壁。 该方法和系统还可以包括将气体进料管加热到50℃至650℃的温度范围内。 通过气体供给管中的多个孔将前体气体供应到中空基板的内部并产生等离子体; 以及相对于所述气体供给管将负偏压施加到所述中空衬底以将离子从所述等离子体吸入所述内表面以在所述内表面上形成涂层。

    IMAGING RESOLUTION RECOVERY TECHNIQUES
    17.
    发明申请
    IMAGING RESOLUTION RECOVERY TECHNIQUES 有权
    成像分辨率恢复技术

    公开(公告)号:US20100040273A1

    公开(公告)日:2010-02-18

    申请号:US12541417

    申请日:2009-08-14

    IPC分类号: G06K9/00

    CPC分类号: G06T11/005

    摘要: One embodiment is a unique method employing an improved image resolution recovery technique. Another embodiment is a unique system implementing an improved image resolution recovery technique. A further embodiment is a method including obtaining a sinogram based upon a measurement of an imaging system, processing the sinogram using a smoothing or fitting technique, deconvolving a system response function of the imaging system from the sinogram to provide a deconvolved sinogram, and constructing an image based upon the deconvolved sinogram. Further embodiments, forms, objects, features, advantages, aspects, and benefits shall become apparent from the following description and drawings.

    摘要翻译: 一个实施例是采用改进的图像分辨率恢复技术的独特方法。 另一个实施例是实现改进的图像分辨率恢复技术的独特系统。 另一实施例是一种方法,包括基于成像系统的测量获得正弦图,使用平滑或拟合技术处理正弦图,从正弦图解卷积成像系统的系统响应函数以提供去卷积的正弦图,以及构造 基于去卷积正弦图的图像。 从以下说明和附图,其他实施例,形式,目的,特征,优点,方面和优点将变得显而易见。

    Method and apparatus for filling inflatables
    19.
    发明申请
    Method and apparatus for filling inflatables 审中-公开
    填充膨胀物的方法和装置

    公开(公告)号:US20080072540A1

    公开(公告)日:2008-03-27

    申请号:US11503764

    申请日:2006-08-14

    IPC分类号: B65B31/00

    CPC分类号: F04B33/00

    摘要: A light-weight, elongate plastic bag having a first end and a second end is provided for transferring air into inflatable items. One end of said elongate flexible bag has an opening, while the opposite end of said elongate flexible bag has a nozzle or other similar fitting. Additionally, an optional check valve can be provided on said nozzle. Air or other gas can be easily introduced into said elongate bag at low pressure and, thereafter, transferred at a relatively higher pressure into an inflatable item to be filled.

    摘要翻译: 提供具有第一端和第二端的重量轻的细长塑料袋,用于将空气转移到充气物品中。 所述细长柔性袋的一端具有开口,而所述细长柔性袋的相对端具有喷嘴或其它类似的配件。 此外,可以在所述喷嘴上设置可选的止回阀。 空气或其它气体可以在低压下容易地引入所述细长袋中,然后在相对较高的压力下转移到要填充的充气物品中。

    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
    20.
    发明授权
    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement 有权
    金属化种子层的溅射沉积和蚀刻用于悬垂和侧壁改进

    公开(公告)号:US07294574B2

    公开(公告)日:2007-11-13

    申请号:US10915139

    申请日:2004-08-09

    IPC分类号: H01L21/44

    摘要: An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

    摘要翻译: 一种用于铜或铝种子层的集成溅射方法和反应器,其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后,使用相同的溅射反应器以能量足够低的能量的能量轻离子(特别是氦)溅射蚀刻衬底,以使其能够将金属化选择性地蚀刻到较重的下层阻挡层,例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体,同时关闭目标电源。 在铜电化学镀以填充孔之前,最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。