发明授权
US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering
有权
用于溅射和再溅射的自电离和电感耦合等离子体
- 专利标题： Self-ionized and inductively-coupled plasma for sputtering and resputtering
- 专利标题（中）： 用于溅射和再溅射的自电离和电感耦合等离子体
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申请号： US10495506申请日： 2002-11-14
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公开(公告)号： US08696875B2公开(公告)日： 2014-04-15
- 发明人: Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
- 申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Konrad Raynes Davda & Victor LLP
- 国际申请： PCT/US02/36940 WO 20021114
- 国际公布： WO03/042424 WO 20030522
- 主分类号： C23C14/35
- IPC分类号： C23C14/35
摘要：
A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
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