公开(公告)号：US20060263540A1

公开(公告)日：2006-11-23

申请号：US11131899

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H05H1/24

CPC分类号： H05H1/46

摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

摘要翻译： 一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积 在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

公开(公告)号：US20060240680A1

公开(公告)日：2006-10-26

申请号：US11114250

申请日：2005-04-25

申请人： Yoshitaka Yokota ,  Kirk Moritz ,  Kai Ma ,  Wen Chang ,  Anastasios Parasiris ,  Rohit Sharma ,  Agus Tjandra ,  Vedapuram Achutharaman ,  Sundar Ramamurthy ,  Randhir Thakur

发明人： Yoshitaka Yokota ,  Kirk Moritz ,  Kai Ma ,  Wen Chang ,  Anastasios Parasiris ,  Rohit Sharma ,  Agus Tjandra ,  Vedapuram Achutharaman ,  Sundar Ramamurthy ,  Randhir Thakur

IPC分类号： H01L21/00

CPC分类号： H01L21/67207 ,  H01L21/67115 ,  H01L21/67778

摘要： A semiconductor wafer processing system including a factory interface operating at atmospheric pressure and mounting plural wafer cassettes and plural wafer processing chambers connected to the factory interface through respective slit valves. A robot in the factory interface can transfer wafers between the cassettes and the processing chambers. At least one of the processing chambers can operate at reduced pressure The processing chamber may be a rapid thermal processing chamber including an array of lamps irradiating a processing volume through a window. The lamphead is vacuum pumped to a pressure approximating that in the processing volume. A multi-step process may be performed with different pressures. The invention also includes a wafer access port of a thermal processing chamber which can flow an inert gas in outside of the slit valve to thereby form a gas curtain outside of the opened slit to prevent the out flow of toxic processing gases.

摘要翻译： 一种半导体晶片处理系统，包括在大气压下工作的工厂接口并安装多个晶片盒和通过相应的狭缝阀连接到工厂接口的多个晶片处理室。 工厂界面中的机器人可以在盒和处理室之间传送晶片。 处理室中的至少一个可以在减压下操作。处理室可以是快速热处理室，其包括通过窗口照射处理容积的灯阵列。 灯头被真空泵送到接近处理量的压力。 可以用不同的压力进行多步骤过程。 本发明还包括热处理室的晶片入口，其能够使狭缝阀外部的惰性气体流动，从而在打开的狭缝外形成气幕，以防止有毒处理气体流出。

公开(公告)号：US07422775B2

公开(公告)日：2008-09-09

申请号：US11131899

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H05H1/24

CPC分类号： H05H1/46

摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

摘要翻译： 一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积 在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

公开(公告)号：US07323401B2

公开(公告)日：2008-01-29

申请号：US11199593

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/22 ,  H01L21/38

CPC分类号： H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

摘要翻译： 使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域 到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。 该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：US20070032004A1

公开(公告)日：2007-02-08

申请号：US11199570

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/8234

CPC分类号： H01L21/76877 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873

摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.

公开(公告)号：US20060264060A1

公开(公告)日：2006-11-23

申请号：US11131941

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/31

CPC分类号： C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  H01L21/268 ,  H01L21/3146

摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

摘要翻译： 在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过 将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

公开(公告)号：US20060260545A1

公开(公告)日：2006-11-23

申请号：US11131900

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/507 ,  C23C16/26 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/3146 ,  H01L21/67115 ,  H01L21/67207

摘要： An integrated system for processing a semiconductor wafer includes a toroidal source plasma reactor for depositing a heat absorbing layer, the reactor including a wafer support, a reactor chamber, an external reentrant toroidal conduit coupled to said chamber on generally opposing sides thereof, an RF source power applicator for coupling power to a section of said external reentrant conduit and a process gas source containing a heat absorbing material precursor gas. The integrated system further includes an optical annealing chamber.

摘要翻译： 一种用于处理半导体晶片的集成系统包括用于沉积吸热层的环形源等离子体反应器，所述反应器包括晶片支架，反应室，与其大致相对的侧面上的所述室耦合的外部折入环形导管，RF源 用于将功率耦合到所述外部折返导管的一部分的电源施加器和包含吸热材料前体气体的处理气体源。 集成系统还包括光学退火室。

公开(公告)号：US08319149B2

公开(公告)日：2012-11-27

申请号：US12240035

申请日：2008-09-29

申请人： Kai Ma ,  Abhilash J. Mayur ,  Vijay Parihar

发明人： Kai Ma ,  Abhilash J. Mayur ,  Vijay Parihar

IPC分类号： B23K26/10 ,  B23K15/00

CPC分类号： H01L21/268 ,  B23K26/0006 ,  B23K26/0876 ,  B23K2103/56

摘要： The time between illumination of adjacent zones of a workpiece edge is extended by a long cool-down period or delay, by interlacing a radiation beam scanning pattern. During the cool-down period, the beam successively scans (along the fast axis) two rows separated by about half the wafer diameter, and travels back and then forth (along the slow axis) across the distance between the two rows, while the radiation beam source continuously generates the beam.

摘要翻译： 工件边缘的相邻区域的照射之间的时间通过交织辐射束扫描图案而延长长时间的冷却周期或延迟。 在冷却期间，光束连续地扫描（沿着快轴）两行，间隔大约一半的晶片直径，并且沿着两行之间的距离向后（和沿着慢轴）行进，而辐射 光束源连续生成光束。

公开(公告)号：US20120122253A1

公开(公告)日：2012-05-17

申请号：US13343523

申请日：2012-01-04

申请人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

发明人： Blake Koelmel ,  Abhilash J. Mayur ,  Kai Ma ,  Alexander N. Lerner

IPC分类号： H01L21/66 ,  H01L21/26

CPC分类号： H01L21/67248 ,  C23C16/4586 ,  H01L21/68742

摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.

摘要翻译： 本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。 本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。 本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。 可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

公开(公告)号：US08043981B2

公开(公告)日：2011-10-25

申请号：US12762425

申请日：2010-04-19

申请人： Kai Ma ,  Yoshitaka Yokota ,  Christopher S. Olsen

发明人： Kai Ma ,  Yoshitaka Yokota ,  Christopher S. Olsen

IPC分类号： H01L21/461 ,  H01L21/302 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31662 ,  H01L21/321 ,  H01L21/32105

摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.

摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 二等离子体源用于在等离子体反应器中形成等离子体。 在各种实施例中，不同数量的功率被提供给以第一频率操作的电源和随时间以第二频率操作的电源。