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公开(公告)号：US08982563B2
公开(公告)日：2015-03-17
申请号：US13171072
申请日：2011-06-28
申请人： Kannan Raj , Ivan Shubin , John E. Cunningham
发明人： Kannan Raj , Ivan Shubin , John E. Cunningham
IPC分类号： H05K7/20 , H05K7/10 , H01L25/18 , H01L23/538
CPC分类号： H05K7/1092 , H01L23/5384 , H01L25/18 , H01L2224/16225 , H01L2224/73253 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要： A chip package includes a processor, an interposer chip and a voltage regulator module (VRM). The interposer chip is electrically coupled to the processor by first electrical connectors proximate to a surface of the interposer chip. Moreover, the interposer chip includes second electrical connectors proximate to another surface of the interposer chip, which are electrically coupled to the first electrical connectors by through-substrate vias (TSVs) in the interposer chip. Note that the second electrical connectors can electrically couple the interposer chip to a circuit board. Furthermore, the VRM is electrically coupled to the processor by the interposer chip, and is proximate to the processor in the chip package, thereby reducing voltage droop. For example, the VRM may be electrically coupled to the surface of the interposer chip, and may be adjacent to the processor. Alternatively, the VRM may be electrically coupled to the other surface of the interposer chip.
摘要翻译： 芯片封装包括处理器，插入器芯片和电压调节器模块（VRM）。 插入器芯片通过靠近插入器芯片的表面的第一电连接器电耦合到处理器。 此外，插入器芯片包括靠近插入器芯片的另一表面的第二电连接器，其通过插入器芯片中的贯穿衬底通孔（TSV）电耦合到第一电连接器。 注意，第二电连接器可以将插入器芯片电连接到电路板。 此外，VRM通过插入器芯片电耦合到处理器，并且靠近芯片封装中的处理器，从而降低电压下降。 例如，VRM可以电耦合到插入器芯片的表面，并且可以与处理器相邻。 或者，VRM可以电耦合到插入器芯片的另一表面。
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公开(公告)号：US08971674B2
公开(公告)日：2015-03-03
申请号：US12730774
申请日：2010-03-24
CPC分类号： G02B6/12007 , G02F1/0147 , G02F1/025 , G02F1/3132
摘要： An optical device with high thermal tuning efficiency is described. This optical device may be implemented using a tri-layer structure (silicon-on-insulator technology), including: a substrate, a buried-oxide layer and a semiconductor layer. In particular, a thermally tunable optical waveguide may be defined in the semiconductor layer. Furthermore, a portion of the substrate under the buried-oxide layer and substantially beneath a location of the thermally tunable optical waveguide is fabricated so that a portion of the buried-oxide layer is exposed. In this way, the thermal impedance between the thermally tunable optical waveguide and an external environment is increased, and power consumption associated with thermal tuning of the optical waveguide is reduced.
摘要翻译： 描述了具有高热调谐效率的光学装置。 该光学器件可以使用三层结构（绝缘体上硅技术）来实现，包括：衬底，掩埋氧化物层和半导体层。 特别地，热可调谐光波导可以限定在半导体层中。 此外，制造掩埋氧化物层下面的基板的一部分并且基本上位于热可调谐光波导的位置下方，使得一部分掩埋氧化物层露出。 以这种方式，热可调谐光波导和外部环境之间的热阻抗增加，并且降低与光波导的热调谐相关的功耗。
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公开(公告)号：US20110235962A1
公开(公告)日：2011-09-29
申请号：US12730774
申请日：2010-03-24
CPC分类号： G02B6/12007 , G02F1/0147 , G02F1/025 , G02F1/3132
摘要： An optical device with high thermal tuning efficiency is described. This optical device may be implemented using a tri-layer structure (silicon-on-insulator technology), including: a substrate, a buried-oxide layer and a semiconductor layer. In particular, a thermally tunable optical waveguide may be defined in the semiconductor layer. Furthermore, a portion of the substrate under the buried-oxide layer and substantially beneath a location of the thermally tunable optical waveguide is fabricated so that a portion of the buried-oxide layer is exposed. In this way, the thermal impedance between the thermally tunable optical waveguide and an external environment is increased, and power consumption associated with thermal tuning of the optical waveguide is reduced.
摘要翻译： 描述了具有高热调谐效率的光学装置。 该光学器件可以使用三层结构（绝缘体上硅技术）来实现，包括：衬底，掩埋氧化物层和半导体层。 特别地，热可调谐光波导可以限定在半导体层中。 此外，制造掩埋氧化物层下面的基板的一部分并且基本上位于热可调谐光波导的位置下方，使得一部分掩埋氧化物层露出。 以这种方式，热可调谐光波导和外部环境之间的热阻抗增加，并且降低与光波导的热调谐相关的功耗。
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公开(公告)号：US20100247022A1
公开(公告)日：2010-09-30
申请号：US12415886
申请日：2009-03-31
CPC分类号： G02B6/12007 , G02F1/0147 , G02F1/025 , G02F2203/15
摘要： Embodiments of an optical device, an array of optical devices, and a technique for fabricating the optical device or the array are described. This optical device is implemented using two semiconductor layers (such as silicon), one of which includes a heater and the other includes a thermally tunable optical waveguide. Spatially separating these two functions in the optical device results in more efficient heat transfer between the heater and the optical waveguide, reduced heat transfer to the surroundings, and reduced optical losses in the optical waveguide relative to existing silicon-based optical devices.
摘要翻译： 描述了光学器件，光学器件阵列以及用于制造光学器件或阵列的技术的实施例。 该光学器件使用两个半导体层（诸如硅）来实现，其中一个包括加热器，另一个包括热可调谐光波导。 在光学器件中空间分离这两个功能导致加热器和光波导之间的更有效的热传递，减少的热传递到周围环境，并且相对于现有的硅基光学器件减少了光波导中的光学损耗。
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15.发明申请ELECTRICAL CONTACTS ON TOP OF WAVEGUIDE STRUCTURES FOR EFFICIENT OPTICAL MODULATION IN SILICON PHOTONIC DEVICES 有权用于在硅光电器件中进行有效光学调制的波形结构顶部的电气接触公开(公告)号：US20100215309A1
公开(公告)日：2010-08-26
申请号：US12389608
申请日：2009-02-20
CPC分类号： G02F1/025 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2201/12 , Y10S977/742
摘要： A phase modulation waveguide structure includes one of a semiconductor and a semiconductor-on-insulator substrate, a doped semiconductor layer formed over the one of a semiconductor and a semiconductor-on-insulator substrate, the doped semiconductor portion including a waveguide rib protruding from a surface thereof not in contact with the one of a semiconductor and a semiconductor-on-insulator substrate, and an electrical contact on top of the waveguide rib. The electrical contact is formed of a material with an optical refractive index close to that of a surrounding oxide layer that surrounds the waveguide rib and the electrical contact and lower than the optical refractive index of the doped semiconductor layer. During propagation of an optical mode within the waveguide structure, the electrical contact isolates the optical mode between the doped semiconductor layer and a metal electrode contact on top of the electrical contact.
摘要翻译： 相位调制波导结构包括半导体和绝缘体上半导体衬底之一，在半导体和绝缘体上半导体衬底之上形成的掺杂半导体层，掺杂半导体部分包括从 其表面不与半导体和绝缘体上半导体衬底之一接触，并且在波导肋的顶部上的电接触。 电接触由光学折射率接近包围波导肋和电接触并且低于掺杂半导体层的光折射率的周围氧化物层的材料形成。 在波导结构内的光学模式的传播期间，电接触将掺杂半导体层和电接触顶部上的金属电极接触之间的光学模式隔离开。
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公开(公告)号：US08772920B2
公开(公告)日：2014-07-08
申请号：US13182220
申请日：2011-07-13
IPC分类号： H01L23/02
CPC分类号： H01L25/0657 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L25/18 , H01L25/50 , H01L2224/13005 , H01L2224/13017 , H01L2224/13027 , H01L2224/13109 , H01L2224/13111 , H01L2224/13147 , H01L2224/14181 , H01L2224/14183 , H01L2224/16105 , H01L2224/16108 , H01L2224/16111 , H01L2224/16225 , H01L2224/16227 , H01L2224/32145 , H01L2224/481 , H01L2224/48227 , H01L2224/73103 , H01L2224/81138 , H01L2224/81899 , H01L2225/06551 , H01L2225/06555 , H01L2225/06593 , H01L2924/01327 , H01L2924/07802 , H01L2924/12042 , H01L2924/01082 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2924/00
摘要： In a chip package, semiconductor dies in a vertical stack of semiconductor dies or chips (which is referred to as a ‘plank stack’) are aligned by positive features that are mechanically coupled to negative features recessed below the surfaces of adjacent semiconductor dies. Moreover, the chip package includes an interposer plate at approximately a right angle to the plank stack, which is electrically coupled to the semiconductor dies along an edge of the plank stack. In particular, electrical pads proximate to a surface of the interposer plate (which are along a stacking direction of the plank stack) are electrically coupled to pads that are proximate to edges of the semiconductor dies by an intervening conductive material, such as solder balls or spring connectors. Note that the chip package may facilitate high-bandwidth communication of signals between the semiconductor dies and the interposer plate.
摘要翻译： 在芯片封装中，半导体管芯或芯片（被称为“板堆叠”）的垂直堆叠中的半导体管芯通过机械耦合到相邻半导体管芯的表面下方的负特性的正特征对准。 此外，芯片封装包括与板堆叠大致成直角的插入板，其沿着板堆的边缘电耦合到半导体管芯。 特别地，靠近插入板的表面（沿着板堆叠的堆叠方向）的电焊盘通过中间导电材料（例如焊料球）电耦合到靠近半导体管芯的边缘的焊盘， 弹簧连接器。 注意，芯片封装可以促进半导体管芯和插入板之间的信号的高带宽通信。
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公开(公告)号：US08548287B2
公开(公告)日：2013-10-01
申请号：US13293624
申请日：2011-11-10
申请人： Hiren D. Thacker , Xuezhe Zheng , Ivan Shubin , Kannan Raj , John E. Cunningham , Ashok V. Krishnamoorthy
发明人： Hiren D. Thacker , Xuezhe Zheng , Ivan Shubin , Kannan Raj , John E. Cunningham , Ashok V. Krishnamoorthy
IPC分类号： G02B6/12
CPC分类号： G02B6/26 , Y10T29/49826
摘要： In an MCM, an optical signal is conveyed by an optical waveguide disposed on a surface of a first substrate to an optical coupler having a vertical facet. This optical coupler has an optical mode that is different than the optical mode of the optical waveguide. For example, the spatial extent of the optical mode associated with the optical coupler may be larger, thereby reducing optical losses and sensitivity to alignment errors. Then, the optical signal is directly coupled from the vertical facet to a facing vertical facet of an identical optical coupler on another substrate, and the optical signal is conveyed in another optical waveguide disposed on the other substrate.
摘要翻译： 在MCM中，光信号由设置在第一基板的表面上的光波导传送到具有垂直面的光耦合器。 该光耦合器具有与光波导的光学模式不同的光学模式。 例如，与光耦合器相关联的光学模式的空间范围可能更大，从而减少光学损耗和对准误差的灵敏度。 然后，光信号从另一基板上的垂直面到同一光耦合器的面向垂直面直接耦合，并且光信号在设置在另一基板上的另一光波导中传送。
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18.发明申请公开(公告)号：US20130207261A1
公开(公告)日：2013-08-15
申请号：US13397593
申请日：2012-02-15
IPC分类号： H01L23/498 , H01L21/50 , H01L23/488
CPC分类号： H01L25/0652 , H01L23/48 , H01L24/16 , H01L24/72 , H01L24/73 , H01L24/90 , H01L24/91 , H01L25/50 , H01L2224/131 , H01L2224/16227 , H01L2224/73201 , H01L2224/73251 , H01L2224/81138 , H01L2224/81815 , H01L2224/9211 , H01L2225/06517 , H01L2225/06527 , H01L2225/06531 , H01L2225/06562 , H01L2225/06593 , H01L2924/15153 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/3511 , H01L2924/37001 , H01L2924/00 , H01L2924/014 , H01L2224/16 , H01L2224/72 , H01L2224/81 , H01L2224/90 , H01L2924/00014 , H01L2924/00012
摘要： An MCM includes a two-dimensional array of facing chips, including island chips and bridge chips that communicate with each other using overlapping connectors. In order to maintain the relative vertical spacing of these connectors, compressible structures are in cavities in a substrate, which house the bridge chips, provide a compressive force on back surfaces of the bridge chips. These compressible structures include a compliant material with shape and volume compression. In this way, the MCM may ensure that facing surfaces of the island chips and the bridge chips, as well as connectors on these surfaces, are approximately coplanar without bending the bridge chips.
摘要翻译： MCM包括面向芯片的二维阵列，包括使用重叠连接器彼此通信的岛芯片和桥芯片。 为了保持这些连接器的相对垂直间隔，可压缩结构位于衬底中的空腔中，其容纳桥芯片，在桥芯片的后表面上提供压缩力。 这些可压缩结构包括具有形状和体积压缩的柔性材料。 以这种方式，MCM可以确保岛芯片和桥芯片的面对表面以及这些表面上的连接器在不弯曲桥接芯片的情况下大致共面。
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公开(公告)号：US20100247029A1
公开(公告)日：2010-09-30
申请号：US12415882
申请日：2009-03-31
IPC分类号： G02B6/12
CPC分类号： G02B6/12007 , G02B2006/12061 , G02F1/011 , G02F1/0147 , G02F2202/10
摘要： Embodiments of an optical device, an array of optical devices, and a technique for fabricating the optical device or the array are described. This optical device is implemented on a substrate (such as silicon), and includes a thermally tunable optical waveguide with a high thermal resistance to the surrounding external environment and a low thermal resistance to a localized heater. In particular, the thermal resistances associated with thermal dissipation paths from a heater in the optical device to an external environment via electrodes and via the substrate are increased, while the thermal resistance between the optical waveguide and the heater is decreased.
摘要翻译： 描述了光学器件，光学器件阵列以及用于制造光学器件或阵列的技术的实施例。 该光学器件实现在基板（例如硅）上，并且包括具有对周围外部环境的高耐热性和对局部加热器的低热阻的热可调谐光波导。 特别地，与通过电极和经由基板的从光学装置中的加热器到外部环境的热耗散路径相关联的热阻增加，同时光波导和加热器之间的热阻降低。
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公开(公告)号：US20130121635A1
公开(公告)日：2013-05-16
申请号：US13293624
申请日：2011-11-10
申请人： Hiren D. Thacker , Xuezhe Zheng , Ivan Shubin , Kannan Raj , John E. Cunningham , Ashok V. Krishnamoorthy
发明人： Hiren D. Thacker , Xuezhe Zheng , Ivan Shubin , Kannan Raj , John E. Cunningham , Ashok V. Krishnamoorthy
CPC分类号： G02B6/26 , Y10T29/49826
摘要： In an MCM, an optical signal is conveyed by an optical waveguide disposed on a surface of a first substrate to an optical coupler having a vertical facet. This optical coupler has an optical mode that is different than the optical mode of the optical waveguide. For example, the spatial extent of the optical mode associated with the optical coupler may be larger, thereby reducing optical losses and sensitivity to alignment errors. Then, the optical signal is directly coupled from the vertical facet to a facing vertical facet of an identical optical coupler on another substrate, and the optical signal is conveyed in another optical waveguide disposed on the other substrate.
摘要翻译： 在MCM中，光信号由设置在第一基板的表面上的光波导传送到具有垂直面的光耦合器。 该光耦合器具有与光波导的光学模式不同的光学模式。 例如，与光耦合器相关联的光学模式的空间范围可能更大，从而减少光学损耗和对准误差的灵敏度。 然后，光信号从另一基板上的垂直面到同一光耦合器的面向垂直面直接耦合，并且光信号在设置在另一基板上的另一光波导中传送。
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