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公开(公告)号：US20210021255A1
公开(公告)日：2021-01-21
申请号：US17043559
申请日：2019-03-14
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche
Abstract: A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.
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公开(公告)号：US11828668B2
公开(公告)日：2023-11-28
申请号：US17753510
申请日：2020-09-04
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard , Thierry LaRoche , Julien Garcia
CPC classification number: G01L9/0025 , G01L1/165 , G01L9/008
Abstract: An acoustic wave pressure sensor device configured to measure a pressure, comprising a substrate configured to bend when pressure is applied to the substrate such that an area of a first kind of strain and an area of a second kind of strain are formed in the substrate; an interdigitated transducer formed over the substrate; a first Bragg mirror formed over the substrate and arranged on one side of the interdigitated transducer; a second Bragg mirror formed over the substrate and arranged on another side of the interdigitated transducer; a first resonance cavity formed between the interdigitated transducer and the first Bragg mirror; a second resonance cavity formed between the interdigitated transducer and the second Bragg mirror; and wherein the first resonance cavity is formed over the area of the first kind of strain and the second resonance cavity is formed over the area of the second kind of strain.
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公开(公告)号：US11606079B2
公开(公告)日：2023-03-14
申请号：US16980328
申请日：2019-03-14
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Florent Bernard , Emilie Courjon
Abstract: A transducer structure for a surface acoustic wave device, comprising a pair of inter-digitated comb electrodes, wherein the pair of inter-digitated comb electrodes comprises neighboring electrode means belonging to different comb electrodes and having a pitch p being defined as the edge-to-edge electrode means distance between two neighboring electrode means, the pitch p satisfying the Bragg condition; characterized in that the pair of inter-digitated comb electrodes comprises at least one region in which two or more neighboring electrode means belong to the same comb electrode while having an edge-to-edge distance to each other corresponding to the pitch p. The present disclosure relates also to a surface acoustic wave filter device.
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公开(公告)号：US20220407491A1
公开(公告)日：2022-12-22
申请号：US17753429
申请日：2020-09-18
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard
Abstract: A transducer structure for a surface acoustic device comprises a composite substrate comprising a piezoelectric layer, a pair of inter-digitated comb electrodes, comprising a plurality of electrode means with a pitch p satisfying the Bragg condition, wherein the inter-digitated comb electrodes are embedded in the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The present disclosure relates also to an acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating the transducer structure. The present disclosure relates also to the use of the frequency of the bulk wave propagating in the electrode means of the transducer structure in an acoustic wave device to generate contribution at high frequency, in particular, above 3 GHz.
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公开(公告)号：US20220173721A1
公开(公告)日：2022-06-02
申请号：US17599149
申请日：2020-03-19
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Thierry LaRoche , Julien Garcia
IPC: H03H9/64 , G01K11/26 , G06K19/067 , G01S13/75
Abstract: A method of interrogating an acoustic wave sensor comprises transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by way of a transmission antenna, receiving, by the interrogator, a response radiofrequency signal from the acoustic wave sensor by way of a reception antenna, and processing by a processing means of the interrogator the received response radiofrequency signal to obtain in-phase and quadrature components both in the time domain and the frequency domain, determining by the processing means perturbations of the obtained in-phase and quadrature components both in the time domain and the frequency domain and determining by the processing means a value of a measurand based on the detected perturbations.
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Patent Agency Ranking
公开(公告)号：US20220060173A1
公开(公告)日：2022-02-24
申请号：US17418824
申请日：2019-12-27
Applicant: THALES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , FREC'N'SYS , YNCREA HAUTS-DE-FRANCE ETABLISSEMENT ISEN LILLE , UNIVERSITE DE LILLE , ECOLE CENTRALE DE LILLE , UNIVERSITE POLYTECHNIQUE HAUTS-DE-FRANCE
Inventor： Thi Mai PHAM COLOMBAN , Claude PRÉVOT , Paolo MARTINS , Anne-Christine HLADKY- HENNION , Bertrand DUBUS , Marianne SAGNARD , Thierry LAROCHE , Sylvain BALLANDRAS , Charles CROENNE
Abstract: A surface acoustic wave device: includes at least one transducer; two acoustic reflectors disposed on either side of the at least one transducer so as to form a cavity, each acoustic reflector comprising an array of electrodes in the form of lines parallel with each other, each array comprising a subset of electrodes connected to a reference potential denoted mass defining a first connection type, and a subset of electrodes that are not connected to any potential, i.e. that have a floating connection defining a second connection type; at least one switching circuit configured to modify the distribution of the connections of at least one part of the electrodes of each array between the different connection types.
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公开(公告)号：US20220341881A1
公开(公告)日：2022-10-27
申请号：US17753508
申请日：2020-09-04
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard , Thierry LaRoche , Julien Garcia
Abstract: An acoustic wave sensor device, comprising an interdigitated transducer; a first reflection structure arranged on one side of the interdigitated transducer, and a second reflection structure arranged on another side of the interdigitated transducer; a first resonance cavity comprising a first upper surface and formed between the interdigitated transducer and the first reflection structure; a second resonance cavity comprising a second upper surface and formed between the interdigitated transducer and the second reflection structure; and wherein the second upper surface comprises a physical and/or chemical modification as compared to the first upper surface.
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公开(公告)号：US20220337220A1
公开(公告)日：2022-10-20
申请号：US17753428
申请日：2020-09-18
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard
Abstract: A transducer structure for a surface acoustic device comprises a composite substrate comprising a piezoelectric layer, a pair of inter-digitated comb electrodes, comprising a plurality of electrode means with a pitch p satisfying the Bragg condition, wherein the inter-digitated comb electrodes are embedded in the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The present disclosure relates also to an acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating the transducer structure. The present disclosure relates also to the use of the frequency of the bulk wave propagating in the electrode means of the transducer structure in an acoustic wave device to generate contribution at high frequency, in particular, above 3 GHz.
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公开(公告)号：US11437973B2
公开(公告)日：2022-09-06
申请号：US17042768
申请日：2019-03-20
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Florent Bernard , Emilie Courjon
Abstract: A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.
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公开(公告)号：US20220196490A1
公开(公告)日：2022-06-23
申请号：US17599896
申请日：2020-03-19
Applicant: FREC'N'SYS
Inventor： Sylvain Ballandras , Emilie Courjon , Florent Bernard , Alexandre Raveski
IPC: G01L1/16
Abstract: A resonator device for measuring stress comprises at least two resonators, each resonator comprising an inter-digitated transducer structure arranged between two reflecting structures on or in a piezoelectric substrate, characterized in that the at least two resonators are arranged and positioned such that they have two different wave propagation directions, and each resonator comprises at least two parts with the area between the two parts of the at least two resonators forming a cavity, wherein the cavity is shared by the at least two resonators. A differential sensing device may comprise at least one resonator device as described herein.
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