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    MAGNETIC TUNNEL JUNCTION HAVING A MAGNETIC INSERTION LAYER AND METHODS OF PRODUCING THE SAME
    13.
    发明申请
    MAGNETIC TUNNEL JUNCTION HAVING A MAGNETIC INSERTION LAYER AND METHODS OF PRODUCING THE SAME 有权
    具有磁性插入层的磁性隧道结及其制造方法

    公开(公告)号：US20120127603A1

    公开(公告)日：2012-05-24

    申请号：US12953233

    申请日：2010-11-23

    Applicant: Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

    Inventor： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

    IPC: G11B21/02 ,  B05D5/00 ,  G11B5/127

    CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121

    Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

    Abstract translation: 根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层 层具有纹理的面心立方（fcc）结构。 第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有 与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。 根据更多实施例描述附加的磁头结构和制造磁头的方法。

    Process for pseudocumene oxidation to trimellitic acid with mother liquor recycle
    14.
    发明授权
    Process for pseudocumene oxidation to trimellitic acid with mother liquor recycle 失效
    用母液回收假阳离子氧化成偏苯三酸的方法

    公开(公告)号：US5095141A

    公开(公告)日：1992-03-10

    申请号：US629825

    申请日：1990-12-19

    Applicant: Wayne P. Schammel ,  Chang-Man Park ,  Donald E. Ruedin ,  John N. Wood ,  Leo C. Fende

    Inventor： Wayne P. Schammel ,  Chang-Man Park ,  Donald E. Ruedin ,  John N. Wood ,  Leo C. Fende

    IPC: C07C51/265

    CPC classification number: C07C51/265

    Abstract: A process is disclosed for oxidation of pseudocumene to trimellitic acid wherein process residue and bottoms from stripping procedures to recover process solvent are recycled and incorporated in filtrate mother liquor and reinjected into the oxidation reactor at a point in time at least after the first methyl group in the pseudocumene molecule has been oxidized to a carboxy group. Recovery of trimellitic acid is increased, catalyst recovery is increased in a form suitable for immediate recycle to the oxidation reaction, and waste products from the oxidation process are substantially reduced.

    Abstract translation: 公开了将假枯烯氧化为偏苯三酸的方法，其中将来自回收工艺溶剂的回收工艺溶剂的工艺残余物和塔底物再循环并并入滤液母液中，并在至少第一个甲基以后的时间点重新注入氧化反应器 假阳离子分子已被氧化成羧基。 回收偏苯三酸增加，催化剂回收率以适合于立即循环到氧化反应的形式增加，并且来自氧化过程的废物显着减少。

    Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting
    16.
    发明授权
    Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting 失效
    通过实施Ti粘贴，RF MgO TMR势垒层工艺的重复性

    公开(公告)号：US08679301B2

    公开(公告)日：2014-03-25

    申请号：US11832318

    申请日：2007-08-01

    Applicant: Chang Man Park

    Inventor： Chang Man Park

    IPC: C23C14/34

    CPC classification number: C23C14/564 ,  C23C14/081 ,  C23C14/16 ,  C23C16/4404

    Abstract: A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.

    Abstract translation: 一种用于在沉积室中进行粘贴的方法和装置。 该方法包括通过溅射Ti靶在至少沉积室的内部上沉积Ti粘贴层，从而减少沉积室中的污染物以便随后的沉积。 该方法还包括在至少沉积室的内部部分上沉积Ti粘贴层之后，在沉积室内的晶片上沉积第二层。 第二层包括MgO和Mg中的至少一种。

    Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same
    17.
    发明授权
    Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same 有权
    具有磁性插入层的磁性隧道结及其制造方法

    公开(公告)号：US08427791B2

    公开(公告)日：2013-04-23

    申请号：US12953233

    申请日：2010-11-23

    Applicant: Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

    Inventor： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Sangmun Oh ,  Chando Park ,  Chang-Man Park

    IPC: G11B5/39

    CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121

    Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

    Abstract translation: 根据一个实施例，磁头包括具有晶体结构的阻挡层，阻挡层上方的第一磁性层，第一磁性层上方的磁性插入层和磁性插入层上方的第二磁性层，第二磁性层 层具有纹理的面心立方（fcc）结构。 第一磁性层包括具有晶体结构的高自旋极化磁性材料，并且与第二磁性层的结晶结构相比，结晶的结晶特性与阻挡层的晶体结构更相似，并且磁性插入层包括具有 与阻挡层的晶体结构相比，晶体结构和结晶特性更类似于第二磁性层的晶体结构。 根据更多实施例描述附加的磁头结构和制造磁头的方法。

    MULTI-ANGLE HARD BIAS DEPOSITION FOR OPTIMAL HARD-BIAS DEPOSITION IN A MAGNETIC SENSOR
    18.
    发明申请
    MULTI-ANGLE HARD BIAS DEPOSITION FOR OPTIMAL HARD-BIAS DEPOSITION IN A MAGNETIC SENSOR 审中-公开
    用于磁传感器中最佳硬度偏移的多角度硬偏置沉积

    公开(公告)号：US20120156390A1

    公开(公告)日：2012-06-21

    申请号：US12975084

    申请日：2010-12-21

    Applicant: Satoru Araki ,  Shin Funada ,  Insik Jin ,  Quang Le ,  Simon H. Liao ,  Chang-Man Park

    Inventor： Satoru Araki ,  Shin Funada ,  Insik Jin ,  Quang Le ,  Simon H. Liao ,  Chang-Man Park

    IPC: B05D3/06 ,  B05D3/10 ,  B05D5/00

    CPC classification number: G01R33/098 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/398 ,  H01F10/123 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

    Abstract: A method for manufacturing a magnetic sensor that result in improved magnetic bias field to the sensor, improved shield to hard bias spacing and a flatter top shield profile. The method includes a multi-angled deposition of the hard bias structure. After forming the sensor stack a first hard bias layer is deposited at an angle of about 70 degrees relative to horizontal. This is a conformal deposition. Then, a second deposition is performed at an angle of about 90 degrees relative to horizontal. This is a notching deposition, that results in notches being formed adjacent to the sensor stack. Then, a hard bias capping layer is deposited at an angle of about 55 degrees relative to horizontal. This is a leveling deposition that further flattens the surface on which the top shield can be electroplated.

    Abstract translation: 一种用于制造磁传感器的方法，其导致对传感器的改善的磁偏置场，改善了对硬偏置间隔的屏蔽和较平坦的顶部屏蔽轮廓。 该方法包括硬偏置结构的多角度沉积。 在形成传感器堆叠之后，第一硬偏压层以相对于水平面约70度的角度沉积。 这是一个保形沉积。 然后，以相对于水平方向大约90度的角度执行第二沉积。 这是一种凹陷沉积，导致在传感器堆叠附近形成凹口。 然后，相对于水平度以大约55度的角度沉积硬偏压盖层。 这是一种平整沉积物，其进一步平坦化可以电镀顶部屏蔽的表面。

    METHOD FOR MANUFACTURING A MAGNETIC TAPE HEAD USING A TMR SENSOR
    19.
    发明申请
    METHOD FOR MANUFACTURING A MAGNETIC TAPE HEAD USING A TMR SENSOR 有权
    使用TMR传感器制造磁带头的方法

    公开(公告)号：US20120152891A1

    公开(公告)日：2012-06-21

    申请号：US12973791

    申请日：2010-12-20

    Applicant: Diane L. Brown ,  Quang Le ,  Chang-Man Park ,  David J. Seagle ,  Eileen Yan

    Inventor： Diane L. Brown ,  Quang Le ,  Chang-Man Park ,  David J. Seagle ,  Eileen Yan

    IPC: G11B5/187

    CPC classification number: G11B5/00826 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3977

    Abstract: A method for manufacturing a magnetic tape head having a data sensor and a servo sensor. The data sensor and servo sensor are each separated from first and second magnetic shields by a non-magnetic gap layer, and the gap thickness for the servo sensor is larger than the gap thickness for the data sensor. The method involves depositing a first gap layer over shield structures, then depositing a second gap layer using a liftoff process to remove the second gap layer over the data sensor region. A plurality of sensor layers are then deposited, and a stripe height defining mask structure is formed over the data and servo sensor regions, the mask having a back edge that is configured to define a stripe height of the data and servo sensors. An ion milling is then performed to define the stripe height and to remove gap material from the field.

    Abstract translation: 一种具有数据传感器和伺服传感器的磁带头的制造方法。 数据传感器和伺服传感器通过非磁隙层与第一和第二磁屏蔽分开，伺服传感器的间隙厚度大于数据传感器的间隙厚度。 该方法包括在屏蔽结构上沉积第一间隙层，然后使用提升过程沉积第二间隙层以去除数据传感器区域上的第二间隙层。 然后沉积多个传感器层，并且在数据和伺服传感器区域上形成条纹高度限定掩模结构，掩模具有配置为限定数据和伺服传感器的条带高度的后边缘。 然后进行离子铣削以限定条带高度并从场中移除间隙材料。

    MAGNETIC SENSOR HAVING IMPROVED RESISTANCE TO THERMAL STRESS INDUCED INSTABILITY
    20.
    发明申请
    MAGNETIC SENSOR HAVING IMPROVED RESISTANCE TO THERMAL STRESS INDUCED INSTABILITY 有权
    具有改善耐热应力诱发不稳定性的磁传感器

    公开(公告)号：US20120106006A1

    公开(公告)日：2012-05-03

    申请号：US12914926

    申请日：2010-10-28

    Applicant: Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

    Inventor： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

    IPC: G11B5/48 ,  G11B5/187

    CPC classification number: G11B5/607 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3906 ,  G11B5/3967

    Abstract: A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.

    Abstract translation: 磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。 由于改进了固定层钉扎，提高了热稳定性。 读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。 读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。 第一层包括Fe含量高于20-30原子％的Co-Fe层。 钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层 和在Co-Fe-B层上形成的第二层Co-Fe层。

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