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    SIDEWALL TRACING NANOPROBES, METHOD FOR MAKING THE SAME, AND METHOD FOR USE
    181.
    发明申请
    SIDEWALL TRACING NANOPROBES, METHOD FOR MAKING THE SAME, AND METHOD FOR USE 有权
    边框跟踪纳米微粒，其制备方法和使用方法

    公开(公告)号：US20100005553A1

    公开(公告)日：2010-01-07

    申请号：US12375161

    申请日：2007-07-27

    Applicant: Sungho Jin ,  Li-Hen Chen ,  Gregory Dahlen ,  Hao-Chih Liu

    Inventor： Sungho Jin ,  Li-Hen Chen ,  Gregory Dahlen ,  Hao-Chih Liu

    IPC: G12B21/08 ,  B82B3/00 ,  C23C16/00 ,  C23F1/02

    CPC classification number: G01Q60/38 ,  G01Q70/12

    Abstract: Sidewall tracing nanoprobes, in which the tip shape of the nanoprobe Is altered so that the diameter or width of the very tip of the probe is wider than the diameter of the supporting stem. Such side protruding probe tips are fabricated by a subtractive method of reducing the stem diameter, an additive method of increasing the tip diameter, or sideway bending of the probe tip. These sidewall tracing nanoprobes are useful for inspection of semiconductor devices, especially to quantitatively evaluate the defects on the side wall of trenches or via holes.

    Abstract translation: 侧壁跟踪纳米探针，其中纳米探针的尖端形状被改变，使得探针的尖端的直径或宽度比支撑杆的直径宽。 这种侧突出的探针尖端通过减小茎直径的减法方法，增加尖端直径的添加方法或探针尖端的侧向弯曲来制造。 这些侧壁跟踪纳米探针可用于检查半导体器件，特别是定量评估沟槽或通孔侧壁上的缺陷。

    Providing a charge dissipation structure for an electrostatically driven device
    184.
    发明授权
    Providing a charge dissipation structure for an electrostatically driven device 有权
    提供静电驱动装置的电荷耗散结构

    公开(公告)号：US07488614B2

    公开(公告)日：2009-02-10

    申请号：US11113782

    申请日：2005-04-25

    Applicant: Susanne Arney ,  Arman Gasparyan ,  Sungho Jin ,  Omar D. López ,  Herbert R. Shea

    Inventor： Susanne Arney ,  Arman Gasparyan ,  Sungho Jin ,  Omar D. López ,  Herbert R. Shea

    IPC: H01L21/00

    CPC classification number: H01G5/16 ,  B81B3/0086 ,  G02B26/0841 ,  H01G5/019

    Abstract: In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electro-mechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.

    Abstract translation: 在一个实施例中，电极设置在电介质的第一部分的表面上，其中第一部分和电极形成器件的电极区域。 然后通过将离子注入电极区域和位于电极区域外部的电介质的第二部分来形成电荷耗散结构。 在另一个实施例中，通过将离子注入到机电系统的可移动部分的电介质中来形成电荷 - 耗散结构。 有利地，可以进行离子注入而不进行掩蔽，光刻或升高的温度; 可以相对容易地控制所得电荷耗散结构的电性能; 并且电荷耗散结构的部分被电介质材料保护免受氧化和/或腐蚀。

    Article comprising gated field emission structures with centralized nanowires and method for making the same
    185.
    发明授权
    Article comprising gated field emission structures with centralized nanowires and method for making the same 失效
    文章包括具有集中纳米线的门控场发射结构及其制作方法

    公开(公告)号：US07332736B2

    公开(公告)日：2008-02-19

    申请号：US11014534

    申请日：2004-12-16

    Applicant: Sungho Jin

    Inventor： Sungho Jin

    IPC: H01L29/06

    CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2237/0635 ,  H01J2329/00 ,  Y10S977/939

    Abstract: This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nanoscale emitters for microwave amplifiers, electron-beam lithography, field emission displays and x-ray sources. The new emission structures are particularly useful in the new devices.

    Abstract translation: 本发明提供了制造新型门控场发射结构的新方法，其包括定位在门孔内的中心区域中的排列的纳米线电子发射体（单独地或小组）。 它还提供了使用微波放大器，电子束光刻，场发射显示器和x射线源的纳米尺度发射器的新型器件。 新的发射结构在新器件中特别有用。

    Field emitter array with split gates and method for operating the same
    186.
    发明申请
    Field emitter array with split gates and method for operating the same 有权
    具有分裂门的场发射极阵列及其操作方法

    公开(公告)号：US20070235772A1

    公开(公告)日：2007-10-11

    申请号：US11223130

    申请日：2005-09-12

    Applicant: Sungho Jin ,  Dong-Wook Kim ,  In Yoo

    Inventor： Sungho Jin ,  Dong-Wook Kim ,  In Yoo

    IPC: H01L29/768

    CPC classification number: H01J1/46 ,  G09G3/22 ,  H01J29/467 ,  H01J31/127

    Abstract: Field emitter arrays with split gates and methods for operating the same. A field emitter array may include one or more pairs of split gates, each connected to a corresponding voltage source, the split gates forming at least one gate hole for at least one emitter tip. Voltages, for example, AC voltages V1 and V2 may be applied to the split gates to perform one- or two-dimensional scanning or tilting depending on a ratio of V1 and V2.

    Abstract translation: 具有分裂门的场发射极阵列及其操作方法。 场发射器阵列可以包括一对或多对分离栅极，每对分离栅极连接到相应的电压源，分离栅极形成用于至少一个发射极尖端的至少一个栅极孔。 电压，例如，交流电压V 1和V 2可以施加到分流门，以根据V的比例执行一维或二维的扫描或倾斜 ＆lt; 1＆gt;和＆lt; 2＆lt; 2＆gt ;.

    Catalytically Grown Mano-Bent Nanostructure and Method for Making the Same
    187.
    发明申请
    Catalytically Grown Mano-Bent Nanostructure and Method for Making the Same 审中-公开
    催化生长的人造纳米结构及其制备方法

    公开(公告)号：US20070207318A1

    公开(公告)日：2007-09-06

    申请号：US11632688

    申请日：2005-07-20

    Applicant: Sungho Jin ,  Li-Han Chen ,  Joseph AuBuchon

    Inventor： Sungho Jin ,  Li-Han Chen ,  Joseph AuBuchon

    IPC: H05H1/24 ,  B32B9/00

    CPC classification number: B82Y40/00 ,  B81B2203/0361 ,  B81C1/00103 ,  B82B3/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10T428/30

    Abstract: Elongated nanostructures and a method of fabricating elongated nanostructures with one or more sharp A bends using a plasma enhanced chemical vapor deposition process comprising placing an anode above the nanostructure and a cathode below the nanostructure, applying a voltage between the anode and cathode to create electric field lines, and changing the direction of the electric field lines during the fabrication of the nanostructure. Device applications using such structures are also disclosed.

    Abstract translation: 伸长的纳米结构和使用等离子体增强化学气相沉积工艺制造具有一个或多个尖锐A弯曲的细长纳米结构的方法，包括将纳米结构上方的阳极和纳米结构下方的阴极放置在阳极和阴极之间施加电压以产生电场 线，并且在纳米结构的制造期间改变电场线的方向。 还公开了使用这种结构的装置应用。

    High resolution electrolytic lithography, apparatus therefor and resulting products
    189.
    发明申请
    High resolution electrolytic lithography, apparatus therefor and resulting products 审中-公开
    高分辨率电解光刻，其设备及其产品

    公开(公告)号：US20060249391A1

    公开(公告)日：2006-11-09

    申请号：US10552197

    申请日：2004-04-06

    Applicant: Sungho Jin

    Inventor： Sungho Jin

    IPC: C25D5/02 ,  C25D17/00

    CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C25D5/02 ,  C25D5/04 ,  C25D17/12 ,  C25F3/14 ,  C25F7/00 ,  G03F7/0002

    Abstract: In accordance with the invention, a surface of a substrate is patterned by the steps of providing the substrate, covering the surface with electrolyte, and disposing at least one nanoscale electrode in the electrolyte adjacent the surface. A current is then applied between the electrode and the substrate to electrolyically deposit material on or remove material from the surface. The material is deposited or removed in a pattern dependent on the pattern, movement and shape of the nanoscale electrodes. Apparatus for this process and novel products therefrom are also described.

    Abstract translation: 根据本发明，通过以下步骤来对衬底的表面进行图案化：提供衬底，用电解质覆盖表面，并且将至少一个纳米级电极设置在邻近表面的电解质中。 然后在电极和基板之间施加电流以电解沉积材料或从表面去除材料。 材料以取决于纳米级电极的图案，运动和形状的图案沉积或去除。 还描述了用于该方法的装置及其新产品。

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