公开(公告)号：US20180211806A1

公开(公告)日：2018-07-26

申请号：US15697272

申请日：2017-09-06

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jin-Woo JEONG ,  Yoon-Ho SONG

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J19/24

Abstract: Provided is an electron emission source including a substrate, a fixed structure provided on the substrate, and an electron emission yarn provided between the substrate and the fixed structure. The fixed structure includes a first portion having a first width and a second portion having a second width greater than the first width, and the electron emission yarn extends on a first sidewall of the first portion of the fixed structure from between the fixed structure and the substrate.

公开(公告)号：US09991081B2

公开(公告)日：2018-06-05

申请号：US15310627

申请日：2014-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Kumoh National Institute of Technology Industry-Academic Cooperation Foundation

Inventor： Shanghyeun Park ,  Donggu Lee ,  Ilhwan Kim ,  Jaekyung Sung ,  Changsoo Lee ,  Dongsu Kang ,  Euna Yu

IPC: H01J19/24 ,  H01J19/44 ,  H01J19/38 ,  H01J9/02 ,  H01J1/30 ,  H01J9/14

CPC classification number: H01J19/24 ,  H01J1/30 ,  H01J9/022 ,  H01J9/148 ,  H01J19/38 ,  H01J19/44 ,  H01J2209/022

Abstract: Disclosed are an electron emitting device using graphene and a method for manufacturing the same. The electron emitting device includes a metal holder having at least one slot, at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and including an emitter supporting member and a graphene emitter attached onto the emitter supporting member, an insulation layer provided on the first surface of the metal holder, and a gate electrode provided on the insulation layer and including a gate supporting member and a graphene gate attached onto the gate supporting member.

公开(公告)号：US09793083B2

公开(公告)日：2017-10-17

申请号：US15396701

申请日：2017-01-02

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01L29/06 ,  H01J19/24 ,  H01J9/02 ,  H01J9/18

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J1/3046 ,  H01J1/308 ,  H01J9/025 ,  H01J9/18 ,  H01J2209/0223

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

公开(公告)号：US20160307723A1

公开(公告)日：2016-10-20

申请号：US15192011

申请日：2016-06-24

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Lawrence A. Clevenger ,  Michael Rizzolo

IPC: H01J21/10 ,  H01J9/02 ,  G06F17/50

CPC classification number: H01J21/105 ,  G06F17/505 ,  G06F2217/02 ,  H01J9/025 ,  H01J19/24

Abstract: A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

Abstract translation: 场发射晶体管包括栅极，发射极上的折叠和收集器上的折叠。 发射极和集电极通过空隙与栅极分离，并通过栅极接触电介质与栅极接触分离。 空隙可以是真空，环境空气或气体。 发射极和集电极的两端分开间隙。 当电压施加到栅极时，电子通过产生的静电场从发射极到集电极的间隙被拉伸。 发射极和集电极包括基本上平行于栅极的第一导电部分和与栅极基本垂直的第二导电部分。 第二导电部分可以通过弯曲第一导电部分的部分而形成。 第二导电部分从第一导电部分朝向门折叠。 各个第二导电部分通常对齐。

公开(公告)号：US09331189B2

公开(公告)日：2016-05-03

申请号：US13888493

申请日：2013-05-07

Applicant: UNIVERSITY OF PITTSBURGH—OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

Inventor： Hong Koo Kim ,  Siwapon Srisonphan

IPC: H01L29/92 ,  H01L29/76 ,  H01L29/66 ,  H01L29/94 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/113 ,  H01L27/144 ,  H01J3/02 ,  H01J1/304

CPC classification number: H01J1/3046 ,  H01J1/3042 ,  H01J3/022 ,  H01J19/24 ,  H01J2201/30423 ,  H01L27/1446 ,  H01L27/146 ,  H01L29/66181 ,  H01L29/66439 ,  H01L29/7613 ,  H01L29/94 ,  H01L31/022466 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/101 ,  H01L31/113 ,  Y02E10/50

Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

Abstract translation: 一种电子器件，包括设置在导电层之间的第一导电层，第二导电层和绝缘层。 至少一个侧壁从第一导电层延伸到第二导电层，并且包括第一导电层，第二导电层和绝缘层的至少一部分。 在第一和第二导电层之间施加偏置电压，其中响应于偏置电压，至少在第一导电层和第二导电层中的至少一个中引入二维电子系统，并且其中来自二维电子 由于库仑排斥的结果，侧壁侧壁从第一导电层和第二导电层中的一个向空气移动，导致第一导电层和第二导电层中的另一个。

公开(公告)号：US09269522B2

公开(公告)日：2016-02-23

申请号：US14152045

申请日：2014-01-10

Applicant: Korea University Research and Business Foundation

Inventor： Cheol Jin Lee ,  Dong Hoon Shin ,  Ji Hong Shin

IPC: H01J9/02 ,  H01J19/24 ,  H01J1/304 ,  H01J3/02

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025

Abstract: An electric field emitting source is equipped with an electron emitting film which comprises a nano-sized electron emitting substance and has a first surface and a second surface constituting the surface opposite thereto, and a cathode which secures one end of the electron emitting film and comprises a first block and a second block respectively corresponding to the first surface and the second surface of the electron emitting film.

Abstract translation: 电场发射源配备有电子发射膜，该电子发射膜包括纳米尺寸的电子发射物质，并且具有构成与其相对的表面的第一表面和第二表面，以及固定电子发射膜的一端的阴极， 分别对应于电子发射膜的第一表面和第二表面的第一块和第二块。

公开(公告)号：US20150124935A1

公开(公告)日：2015-05-07

申请号：US14506362

申请日：2014-10-03

Applicant: X-Illumina, Inc.

Inventor： Steven D. Hansen

IPC: H01J35/08 ,  H01J35/06

CPC classification number: H05G2/00 ,  H01J19/04 ,  H01J19/24 ,  H01J35/065 ,  H01J35/08 ,  H05H1/52

Abstract: Described herein are methods and systems relating to an x-ray generation system. In some embodiments, the system includes an electron beam acceleration region that generates an electron beam and accelerates electrons in the beam and a radiation generation region that (i) receives the electron beam and (ii) generates an electric field having an energy of greater than about 10E7 V/m without electrical breakdown of vacuum gaps. The electric field is configured to decelerate electrons in the electron beam sufficiently to generate x-ray energy.

Abstract translation: 这里描述了与x射线产生系统有关的方法和系统。 在一些实施例中，该系统包括产生电子束并加速该束中的电子的电子束加速区域和（i）接收电子束的辐射产生区域，以及（ii）产生具有大于 约10E7 V / m，无电绝缘真空间隙。 电场被配置为使电子束中的电子充分减速以产生x射线能量。

公开(公告)号：US08938049B2

公开(公告)日：2015-01-20

申请号：US13893519

申请日：2013-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do-yoon Kim ,  Yong-chul Kim ,  Il-hwan Kim ,  Shang-hyeun Park ,  Tae-won Jeong

IPC: H01J35/06 ,  H01J29/50 ,  H01J19/24 ,  H01J1/02 ,  H01J3/02 ,  H01J31/12 ,  H01J63/02 ,  H01J9/02 ,  H01J63/06 ,  B82Y99/00

CPC classification number: H01J19/24 ,  B82Y99/00 ,  H01J1/02 ,  H01J3/021 ,  H01J9/02 ,  H01J31/127 ,  H01J35/06 ,  H01J35/065 ,  H01J63/02 ,  H01J63/06 ,  H01J2203/0208 ,  H01J2235/062 ,  H01J2235/068 ,  H01J2329/4608 ,  Y10S977/939

Abstract: A mesh electrode adhesion structure includes: a substrate, and an opening defined in the substrate; a mesh electrode on the substrate, and a first combination groove defined in the mesh electrode; and an adhesion layer between the substrate and the mesh electrode. The mesh electrode includes: a mesh region corresponding to the opening defined in the substrate, and an adhesion region in which the first combination groove exposes the adhesion layer.

Abstract translation: 网状电极粘合结构包括：基板和限定在基板中的开口; 基板上的网状电极以及限定在网状电极中的第一组合槽; 以及基板和网状电极之间的粘附层。 网状电极包括：对应于在基板中限定的开口的网格区域，以及第一组合凹槽暴露粘合层的粘合区域。

公开(公告)号：US20140191650A1

公开(公告)日：2014-07-10

申请号：US14152045

申请日：2014-01-10

Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

Inventor： Cheol Jin Lee ,  Dong Hoon Shin ,  Ji Hong Shin

IPC: H01J19/24 ,  H01J9/02

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025

Abstract: An electric field emitting source is equipped with an electron emitting film which comprises a nano-sized electron emitting substance and has a first surface and a second surface constituting the surface opposite thereto, and a cathode which secures one end of the electron emitting film and comprises a first block and a second block respectively corresponding to the first surface and the second surface of the electron emitting film.

Abstract translation: 电场发射源配备有电子发射膜，该电子发射膜包括纳米尺寸的电子发射物质，并且具有构成与其相对的表面的第一表面和第二表面，以及固定电子发射膜的一端的阴极， 分别对应于电子发射膜的第一表面和第二表面的第一块和第二块。

公开(公告)号：US20060060835A1

公开(公告)日：2006-03-23

申请号：US10534633

申请日：2003-11-27

Applicant: Avto Tavkhelidze ,  Leri Tsakadze

Inventor： Avto Tavkhelidze ,  Leri Tsakadze

IPC: H01L29/08 ,  H01L35/24

CPC classification number: H01J45/00 ,  F25B21/00 ,  F25B2321/003 ,  H01J19/24 ,  H01J21/02 ,  Y02B30/66 ,  Y10S438/979

Abstract: The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum oxide, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum oxide, and placing the insulator between the collector electrode and the emitter electrode.

Abstract translation: 本发明包括一种隧穿装置，其中集电极被修改，使得能量较高的电子从发射电极到集电极的隧道效应得到增强。 在一个实施例中，集电极与设置在集电极和发射极之间的绝缘体层，优选氧化铝接触。 本发明还包括一种用于增强高能电子从发射电极到集电极的隧穿的方法，所述方法包括使集电极与绝缘体（优选氧化铝）接触的步骤，并将绝缘体放置在集电极和 发射电极。