METHOD AND APPARATUS FOR SELECTIVE PRE-DISPERSION OF EXTRACTED ION BEAMS IN ION IMPLANTATION SYSTEMS
    171.
    发明申请
    METHOD AND APPARATUS FOR SELECTIVE PRE-DISPERSION OF EXTRACTED ION BEAMS IN ION IMPLANTATION SYSTEMS 失效
    用于离子植入系统中提取离子束的选择性预分散的方法和装置

    公开(公告)号:US20050218343A1

    公开(公告)日:2005-10-06

    申请号:US10815586

    申请日:2004-04-01

    CPC classification number: H01J37/05 H01J37/3171

    Abstract: Ion implantation systems are provided, comprising a dispersion system located between an ion source and a mass analyzer, that operates to selectively pass an extracted ion beam from the ion source toward the mass analyzer or to direct a dispersed ion beam toward the mass analyzer, where the dispersed ion beam has fewer ions of an undesired mass range than the extracted ion beam.

    Abstract translation: 提供离子注入系统,其包括位于离子源和质量分析器之间的分散系统,其操作以选择性地将离子源从离子源向质量分析器传递,或者将分散的离子束引导到质量分析器,其中 分散的离子束具有比提取的离子束更少的不期望质量范围的离子。

    Method and device for separating ion mass, and ion doping device
    172.
    发明授权
    Method and device for separating ion mass, and ion doping device 有权
    用于分离离子质量的方法和装置,以及离子掺杂装置

    公开(公告)号:US06900434B2

    公开(公告)日:2005-05-31

    申请号:US10204412

    申请日:2001-12-27

    Inventor: Hajime Kuwabara

    CPC classification number: H01J37/3171 H01J37/05 H01J49/26 H01J49/32

    Abstract: A hollow exciting current pathway in the form of a conductor is arranged outside of an ion deflection casing with a curved contour and having an inlet and an outlet. The conductor is composed of a widthwise spiral formation of conductors running through the inlet and outlet and along the curved contour with a result that a magnetic field which is uniform widthwise is formed in the ion deflection casing. An ion beam is introduced through between the conductors at the inlet into the hollow exciting current pathway. By the action of the magnetic field through the hollow exciting current pathway, the ion beam is bent depending upon mass of ions. The ion beam with desired mass is taken out through between the conductors at the outlet with a result that an ion beam greater in size can be ion mass separated uniformly.

    Abstract translation: 以导体形式的中空激励电流通路设置在具有弯曲轮廓并具有入口和出口的离子偏转壳体的外部。 导体由沿着入口和出口延伸的导体沿着弯曲轮廓的宽度方向的螺旋形组成,结果是横向均匀地形成在离子偏转壳体中的磁场。 离子束通过入口处的导体之间引入中空激励电流通路中。 通过中空激励电流通路的磁场作用,离子束根据离子的质量而弯曲。 具有所需质量的离子束通过出口处的导体之间被取出,结果使得尺寸更大的离子束可以被均匀地离子质量分离。

    Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam
    173.
    发明授权
    Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam 失效
    对称束线和用于产生质量分析的带状离子束的方法

    公开(公告)号:US06885014B2

    公开(公告)日:2005-04-26

    申请号:US10210124

    申请日:2002-07-31

    Abstract: Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system comprises two similar magnets, where the first magnet mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station. The symmetrical system provides equidistant beam trajectories for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.

    Abstract translation: 公开了离子注入系统和其束线,其中质量分析和准直以提供质量分析的带状束,用于植入一个或多个工件。 束线系统包括两个类似的磁体,其中第一磁体质量分析带状束以提供中间质量分析离子束,并且第二磁体准直中间光束,以向终端站提供均匀质量分析的带状束。 对称系统为细长波束宽度上的离子提供等距离的波束轨迹,以便减轻通过系统的波束传输中的非线性,使得所得到的质量分析波束高度均匀。

    Method and apparatus for observing element distribution
    174.
    发明授权
    Method and apparatus for observing element distribution 有权
    观察元素分布的方法和装置

    公开(公告)号:US06855927B2

    公开(公告)日:2005-02-15

    申请号:US10435050

    申请日:2003-05-12

    CPC classification number: G01N23/02

    Abstract: There are provided an element distribution observing method and an element distribution observing apparatus under utilization of core-loss electrons capable of restricting artifact caused by either a thickness or density of a specimen, or an occurrence of the artifact caused by a diffraction contrast. Electron beam intensities in a total three different energy-loss areas of two energy-loss areas not containing any core-loss electrons and one energy-loss area are calculated to attain an element distribution on the basis of the corresponding three energy-loss areas and an electron beam intensity.

    Abstract translation: 提供了一种利用能够限制由样本的厚度或密度引起的伪影的核心损耗电子的元素分布观察方法和元件分布观察装置,或由衍射对比度引起的伪影的发生。 计算两个能量损失区域的三个不同能量损失区域中不含任何铁损损失电子和一个能量损失面积的电子束强度,以根据相应的三个能量损失面积获得元素分布, 电子束强度。

    Ion implanter with post mass selection deceleration
    176.
    发明授权
    Ion implanter with post mass selection deceleration 失效
    离子注入机,后质量选择减速

    公开(公告)号:US5932882A

    公开(公告)日:1999-08-03

    申请号:US860749

    申请日:1997-09-08

    CPC classification number: H01J37/3171 H01J37/3007 H01J2237/04756

    Abstract: A decel lens assembly (9) located between the mass selection flight tube and the substrate holder comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential and a field electrode (61) between the two at a negative potential to provide focusing. The axial spacing in the beam direction between the first and second electrodes is less than the smallest transverse dimension of the field electrode. The decel lens assembly (9) is mounted directly opposite the outlet from the process chamber to the vacuum pump to maximize evacuation efficiency. An additional screening electrode (56) is provided between the second electrode of the decel lens assembly and the exit aperture of the mass selector. A perforated screening cylinder (54) is mounted on the light tube with the second electrode of the lens assembly mounted at the down beam end of the cylinder. A first electrode has a cylindrical screening flange extending around the field electrode. A further screening electrode is located at the entrance to the electron confinement tube of the PFS system.

    Abstract translation: PCT No.PCT / GB96 / 02741 Sec。 371日期:1997年9月8日 102(e)1997年9月8日PCT PCT 1996年11月8日PCT公布。 公开号WO97 / 17717PC。 日期1997年5月15日位于质量选择飞行管和衬底保持器之间的减速器组件(9)包括在衬底电位处的第一电极(65),在飞行管电位处的第二电极(60)和场电极 61)两者之间处于负电位以提供聚焦。 第一和第二电极之间的光束方向上的轴向间距小于场电极的最小横向尺寸。 减速透镜组件(9)直接安装在从处理室的出口的正对面到真空泵的对面,以最大化排出效率。 在减速透镜组件的第二电极和质量选择器的出口之间设置另外的屏蔽电极(56)。 穿孔筛筒(54)安装在光管上,透镜组件的第二电极安装在气缸的下梁端。 第一电极具有围绕场电极延伸的圆柱形屏蔽凸缘。 另一个屏蔽电极位于PFS系统的电子限制管的入口处。

    Ion implanter and ion implanting method using the same
    177.
    发明授权
    Ion implanter and ion implanting method using the same 失效
    离子注入机和离子注入方法使用相同

    公开(公告)号:US5814822A

    公开(公告)日:1998-09-29

    申请号:US771772

    申请日:1996-12-20

    CPC classification number: H01J37/3171 H01J2237/057

    Abstract: An ion implanter and an ion implanting method compatible for both positive and negative ions. The ion implanter has an ion extractor and a mass analyzer for deflecting ions, having one of a positive or negative charged state, in a predetermined direction regardless of the charged state of the ions. A polarity converter changes the flux direction of a magnetic field in the mass analyzer according to the charged state of the ions. Thus, shallow and deep impurity layers can be formed into wafers without changing ion implanters, such that BF.sup.+ as well as B.sup.+ or P.sup.+ can be implanted with a single ion implanter. As a result, the product yield of a semiconductor device can be improved.

    Abstract translation: 离子注入机和离子注入方法兼容正离子和负离子。 离子注入机具有离子提取器和质量分析器,用于偏转具有正或负带电状态之一的离子在预定方向上,而不管离子的带电状态如何。 极性转换器根据离子的充电状态来改变质量分析器中的磁场的磁通方向。 因此,可以在不改变离子注入机的情况下将浅的和深的杂质层形成晶片,使得可以用单个离子注入机注入BF +以及B +或P +。 结果,可以提高半导体器件的产品产量。

    Automated adjustment of an energy filtering transmission electron
microscope
    178.
    发明授权
    Automated adjustment of an energy filtering transmission electron microscope 失效
    能量过滤透射电子显微镜的自动调整

    公开(公告)号:US5798524A

    公开(公告)日:1998-08-25

    申请号:US684973

    申请日:1996-08-07

    Abstract: An energy filtering system of an EFTEM is automatically adjusted using a computer. The computer inserts an energy-selecting slit into the beam path and begins monitoring the position of the electron beam through a combination of the current sensors integral to the slit and the readout of an electron camera. The beam is centered within the slit by adjusting an energy dispersing element while monitoring beam sensors. After initial alignment, the slit is retracted and a reference aperture is inserted at the entrance to the energy filter. The electron camera captures an image of the reference aperture and the computer analyzes the deviations of the aperture image from its known physical dimensions in order to evaluate the electron optical distortions and aberrations of the filter. The computer uses the determined optical parameters to adjust the distortion and aberration correcting optical elements of the filter, whose effects are known due to previous calibration. After correcting the imaging aberrations, the reference aperture is withdrawn, the slit reinserted, and an isochromatic surface of the filter at the plane of the slit is measured by scanning the beam across a slit edge while integrating the transmitted beam intensity on the electron camera. The isochromatic surface thus collected by the electron camera is analyzed by the computer to extract additional aberration coefficients of the filter system. These measured aberration coefficients are used to make calibrated corrections to the filter optics.

    Abstract translation: 使用计算机自动调整EFTEM的能量过滤系统。 计算机将能量选择狭缝插入光束路径中,并开始通过整合到狭缝的电流传感器和电子照相机的读出的组合监视电子束的位置。 通过在监测光束传感器的同时调节能量分散元件,光束在狭缝内居中。 在初始对准之后,狭缝缩回并且在能量过滤器的入口处插入参考孔。 电子摄像机捕获参考光圈的图像,并且计算机分析孔径图像与其已知物理尺寸的偏差,以便评估滤光器的电子光学失真和像差。 计算机使用确定的光学参数来调整滤波器的失真和像差校正光学元件,其由于先前的校准而已知其影响。 在校正成像像差之后,取出参考孔径,重新插入缝隙,并且通过扫描横跨狭缝边缘的光束来测量滤光器在狭缝平面处的等色表面,同时将透射光束强度整合在电子照相机上。 由电子照相机收集的等色表面由计算机分析以提取滤光系统的附加像差系数。 这些测量的像差系数用于对滤光器光学元件进行校准校正。

    Method and apparatus for ion beam formation in an ion implanter
    179.
    发明授权
    Method and apparatus for ion beam formation in an ion implanter 失效
    用于离子注入机离子束形成的方法和装置

    公开(公告)号:US5554857A

    公开(公告)日:1996-09-10

    申请号:US545135

    申请日:1995-10-19

    CPC classification number: H01J37/3171 H01J37/05 H01J2237/14

    Abstract: A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region. A controller electrically coupled to the one or more coils of said magnet for controls current through the one or more current carrying coils to create the magnetic field in the deflection region near the pole pieces.

    Abstract translation: 具有用于发射离子的离子源和离子源与离子源间隔离离子束路径的低能离子注入机,离子束通过该离子束从离子源移动到注入室。 沿着源和注入室之间的光束路径定位的质量分析磁体通过受控的弧形路径偏转离子以从离子束过滤离子,同时允许某些其它离子进入离子注入室。 磁体包括由铁磁材料构成的多个磁极片,并且具有结合至少一部分离子偏转区域的向内的磁极表面。 一个或多个载流线圈在极片附近的偏转区域中建立偶极子磁场。 额外的线圈有助于在偏转区域中建立一个四极场。 电耦合到所述磁体的一个或多个线圈的控制器,用于控制通过所述一个或多个载流线圈的电流,以在极片附近的偏转区域中产生磁场。

    Magnetic-cusp, cathodic-arc source
    180.
    发明授权
    Magnetic-cusp, cathodic-arc source 失效
    磁尖,阴极电弧源

    公开(公告)号:US5468363A

    公开(公告)日:1995-11-21

    申请号:US232661

    申请日:1994-04-25

    Inventor: Steven Falabella

    CPC classification number: H01J37/05 H01J27/14 H01J2237/022 H01J2237/3142

    Abstract: A magnetic-cusp for a cathodic-arc source wherein the arc is confined to the desired cathode surface, provides a current path for electrons from the cathode to the anode, and utilizes electric and magnetic fields to guide ions from the cathode to a point of use, such as substrates to be coated. The magnetic-cusp insures arc stability by an easy magnetic path from anode to cathode, while the straight-through arrangement leads to high ion transmission.

    Abstract translation: 用于阴极电弧源的磁尖,其中电弧被限制在所需的阴极表面,为电子从阴极到阳极提供电流路径,并利用电场和磁场将离子从阴极引导到 使用,例如待涂覆的基材。 磁性尖端通过从阳极到阴极的容易的磁路确保电弧稳定性,而直通装置导致高离子传输。

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