IMAGE SENSOR
    175.
    发明申请

    公开(公告)号:US20250126903A1

    公开(公告)日:2025-04-17

    申请号:US18990000

    申请日:2024-12-20

    Abstract: An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

    SEMICONDUCTOR DEVICE
    178.
    发明申请

    公开(公告)号:US20250126835A1

    公开(公告)日:2025-04-17

    申请号:US18625457

    申请日:2024-04-03

    Abstract: A semiconductor device may include peripheral circuit structures on a substrate, an interlayer insulating layer on the peripheral circuit structure, a bit line extending in a first direction in the interlayer insulating layer, a semiconductor pattern on the bit line, and including first and second vertical portions facing each other in the first direction and a horizontal portion connecting the first and second vertical portions to each other, first and second word lines on the horizontal portion and adjacent to the first and second vertical portions, respectively, and a gate insulating pattern interposed between the first vertical portion and the first word line, and between the second vertical portion and the second word line. An upper surface of the interlayer insulating layer and an upper surface of the bit line are coplanar with each other.

    NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:US20250126790A1

    公开(公告)日:2025-04-17

    申请号:US18756161

    申请日:2024-06-27

    Abstract: An example non-volatile memory device includes a substrate including a first cell region, a second cell region, and a connection region between the first cell region and the second cell region, a mold structure including a plurality of gate electrodes being stacked in a stepped pattern in a pad region, a trench along a profile of the mold structure on the pad region, the trench including a bottom surface having a stair shape and a first sidewall on a boundary between the pad region and a wall region, a liner film on the first sidewall of the trench, a recess in the trench and exposing a pad portion of a gate electrode, a cell contact provided at the recess and connected with the pad portion, and a cover insulating layer provided at the trench. The liner film has a different etch selectivity with respect to the cover insulating layer.

    TRAY DETACHABLY COUPLED TO HOUSING, AND ELECTRONIC DEVICE COMRPISING SAME

    公开(公告)号:US20250126733A1

    公开(公告)日:2025-04-17

    申请号:US19002694

    申请日:2024-12-27

    Abstract: An electronic device according to one embodiment includes: a housing including a through-hole; a printed circuit board; and a tray which moves to the outside of the through-hole according to movement in the first direction, or of which at least one portion is arranged on the printed circuit board according to movement in the second direction in order to be inserted into the through-hole, where the tray includes: a first accommodation hole for insertion of an external member penetrating the outer surface of the tray; and an elastic member which includes an insertion hole, and which can be deformed by the external member, and the tray is inserted into the insertion hole so as to be movable to the outside of the through-hole by movement in the first direction of the external member in contact with the elastic member.

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