公开(公告)号：US20200325576A1

公开(公告)日：2020-10-15

申请号：US16843347

申请日：2020-04-08

Applicant: Applied Materials, Inc.

Inventor： Karl J. ARMSTRONG ,  Ludovic GODET ,  Brian Alexander COHEN ,  Wayne MCMILLAN ,  James D. STRASSNER ,  Benjamin RIORDON

IPC: C23C16/40 ,  C23C14/04 ,  C23C16/04 ,  C23C16/455 ,  C23C14/08 ,  C23C14/06 ,  C23C14/14 ,  C23C16/24 ,  C23C16/34

Abstract: Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

公开(公告)号：US20200278605A1

公开(公告)日：2020-09-03

申请号：US16290635

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Michael Y. YOUNG ,  Ludovic GODET ,  Robert J. VISSER

IPC: G03F7/00

Abstract: Methods and apparatus for stamp generation are disclosed using nano-resist and ultra violet blocking materials. In one non-limiting embodiment, a method of producing a copy of a stamp for generating electrical/optical components is disclosed comprising: providing the stamp; coating a bottom surface of the stamp with a ultra violet blocking material; curing the ultra violet blocking material on the bottom surface; contacting the stamp to a target substrate covered with a layer of imprint resist; curing the imprint resist with ultraviolet blocking material during the contacting of the stamp to the target substrate; and releasing the stamp from the target substrate with the cured layer of imprint resist.

公开(公告)号：US20200004029A1

公开(公告)日：2020-01-02

申请号：US16454642

申请日：2019-06-27

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Wayne MCMILLAN ,  Rutger MEYER TIMMERMAN THIJSSEN

IPC: G02B27/09 ,  G02B5/18

Abstract: The systems and methods discussed herein are for the fabrication of diffraction gratings, such as those gratings used in waveguide combiners. The waveguide combiners discussed herein are fabricated using nanoimprint lithography (NIL) of high-index and low-index materials in combination with and directional etching high-index and low-index materials. The waveguide combiners can be additionally or alternatively formed by the directional etching of transparent substrates. The waveguide combiners that include diffraction gratings discussed herein can be formed directly on permanent transparent substrates. In other examples, the diffraction gratings can be formed on temporary substrates and transferred to a permanent, transparent substrate.

公开(公告)号：US20190301009A1

公开(公告)日：2019-10-03

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  C23C16/56 ,  C23C16/54 ,  C23C16/455 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20190278005A1

公开(公告)日：2019-09-12

申请号：US16293354

申请日：2019-03-05

Applicant: Applied Materials, Inc.

Inventor： Michael Yu-tak YOUNG ,  Ludovic GODET ,  Robert Jan VISSER ,  Naamah ARGAMAN ,  Christopher Dennis BENCHER ,  Wayne MCMILLAN

IPC: G02B5/18 ,  G02B26/08 ,  G02B27/22

Abstract: Embodiments herein describe a sub-micron 3D diffractive optics element and a method for forming the sub-micron 3D diffractive optics element. In a first embodiment, a method is provided for forming a sub-micron 3D diffractive optics element on a substrate without planarization. The method includes depositing a material stack to be patterned on a substrate, depositing and patterning a thick mask material on a portion of the material stack, etching the material stack down one level, trimming a side portion of the thick mask material, etching the material stack down one more level, repeating trim and etch steps above ‘n’ times, and stripping the thick mask material from the material stack.

公开(公告)号：US20190148208A1

公开(公告)日：2019-05-16

申请号：US16183896

申请日：2018-11-08

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Rutger MEYER TIMMERMAN THIJSSEN

IPC: H01L21/683 ,  F21V8/00 ,  B25B11/00

Abstract: Embodiments described herein relate to a substrate chucking apparatus having a plurality of cavities formed therein. The cavities are formed in a body of the chucking apparatus and a plurality of support elements extend from the body and separate each of the plurality of cavities. In one embodiment, a first plurality of ports are formed in a top surface of the body and extend to a bottom surface of the body through one or more of the plurality of support elements. In another embodiment, a second plurality of ports are formed in a bottom surface of the plurality of cavities and extend through the body to a bottom surface of the body. In yet another embodiment, a first electrode assembly is disposed adjacent the top surface of the body within each of the plurality of support elements and a second electrode assembly is disposed within the body adjacent each of the plurality of cavities.

公开(公告)号：US20180224754A1

公开(公告)日：2018-08-09

申请号：US15947409

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Ludovic GODET ,  Kyle M. HANSON ,  Robert B. MOORE

IPC: G03F7/20

CPC classification number: G03F7/70716 ,  G03F7/38 ,  G03F7/70725 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67248

Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

公开(公告)号：US20180102248A1

公开(公告)日：2018-04-12

申请号：US15831342

申请日：2017-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun XUE ,  Ludovic GODET ,  Martin A. HILKENE ,  Matthew D. SCOTNEY-CASTLE

IPC: H01L21/02 ,  C23C14/04 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02527 ,  C23C14/046 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/033 ,  H01L21/67253

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

公开(公告)号：US20170306491A1

公开(公告)日：2017-10-26

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Adib KHAN ,  Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B05D1/185 ,  B05D1/60 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

公开(公告)号：US20170184976A1

公开(公告)日：2017-06-29

申请号：US15290992

申请日：2016-10-11

Applicant: Applied Materials, Inc.

Inventor： Christine Y. OUYANG ,  Sang Ki NAM ,  Ludovic GODET

IPC: G03F7/20

CPC classification number: G03F7/38 ,  G03F7/70325

Abstract: Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. Methods described herein include dissociation of a photoacid generator to generate anions and cations. The anions may be moved within the photoresist layer by the electric field to more precisely control the speed and location of acid generation and regeneration processes.