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公开(公告)号：US20160290969A1
公开(公告)日：2016-10-06
申请号：US15177899
申请日：2016-06-09
CPC分类号： G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
摘要： Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20160264400A1
公开(公告)日：2016-09-15
申请号：US15158968
申请日：2016-05-19
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B06B1/0292 , B06B1/02 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
摘要翻译： 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。
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公开(公告)号：US20160242739A1
公开(公告)日：2016-08-25
申请号：US15143369
申请日：2016-04-29
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC分类号： A61B8/00
CPC分类号： A61B8/4494 , A61B8/14 , A61B8/145 , A61B8/4483 , A61B8/4488 , A61B8/485 , A61B8/54 , A61N7/00 , A61N7/02 , B06B1/02 , B81C1/00246 , G01S7/52019 , G01S7/52034 , G01S7/52047 , G01S7/5208 , G01S15/02 , G01S15/8915 , G01S15/8977 , H04R1/00
摘要： To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.
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公开(公告)号：US09394162B2
公开(公告)日：2016-07-19
申请号：US14716152
申请日：2015-05-19
CPC分类号： G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
摘要： Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20160202349A1
公开(公告)日：2016-07-14
申请号：US15075942
申请日：2016-03-21
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.
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156.发明授权Interconnectable ultrasound transducer probes and related methods and apparatus 有权可互连的超声换能器探头及相关方法和装置公开(公告)号：US09351706B2
公开(公告)日：2016-05-31
申请号：US14561504
申请日：2014-12-05
发明人： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston , Gregory L. Charvat , Gregory Corteville
IPC分类号： A61B8/00 , A61B8/13 , A61B8/08 , G03B27/42 , G03B27/52 , B06B1/02 , G01S7/00 , A61B8/14 , A61N7/02 , G01S7/52 , G01S15/89 , A61N7/00
CPC分类号： A61B8/4444 , A61B8/13 , A61B8/14 , A61B8/4411 , A61B8/4477 , A61B8/4483 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/54 , A61B8/56 , A61N7/02 , A61N2007/0078 , B06B1/0292 , G01S7/003 , G01S7/5208 , G01S7/52084 , G01S15/8915 , G03B27/423 , G03B27/52 , Y10T29/49005
摘要： Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality.
摘要翻译： 描述了超声装置和方法，包括具有超声换能器和相应电路的可重复的超声换能器探头。 可重复的超声换能器探针可以单独使用或与可重复的超声换能器探头的其它实例相结合以产生所需的超声波装置。 超声设备可以可选地连接到各种类型的外部设备以提供额外的处理和图像呈现功能。
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157.发明授权Architecture of single substrate ultrasonic imaging devices, related apparatuses, and methods 有权单基底超声波成像装置的结构，相关装置和方法公开(公告)号：US09229097B2
公开(公告)日：2016-01-05
申请号：US14689090
申请日：2015-04-17
CPC分类号： G01S7/52019 , B06B1/0292 , B06B1/0607 , G01S7/52017 , G01S7/5202 , G10K11/346 , H03K5/13 , H03K2005/00019
摘要： Aspects of the technology described herein relate to ultrasound device circuitry as may form part of a single substrate ultrasound device having integrated ultrasonic transducers. The ultrasound device circuitry may facilitate the generation of ultrasound waveforms in a manner that is power- and data-efficient.
摘要翻译： 本文描述的技术的方面涉及超声装置电路，其可以形成具有集成的超声换能器的单个衬底超声装置的一部分。 超声波装置电路可以以功率和数据效率的方式促进产生超声波形。
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158.发明授权Image-guided high intensity focused ultrasound and related apparatus and methods 有权图像引导高强度聚焦超声及相关仪器及方法公开(公告)号：US09149255B2
公开(公告)日：2015-10-06
申请号：US14191627
申请日：2014-02-27
CPC分类号： G01S7/52017 , A61B5/015 , A61B8/08 , A61B8/13 , A61B8/4209 , A61B8/4245 , A61B8/4254 , A61B8/4263 , A61B8/4477 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/56 , A61B8/565 , A61B17/320068 , A61B2090/378 , A61B2562/164 , A61N7/00 , A61N7/02 , A61N2007/0078 , G01S7/52019 , G01S7/52023
摘要： Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.
摘要翻译： 描述了包括超声成像装置的装置和方法，其可以在透射超声成像模式中操作，并且其可以用于检测对象的感兴趣的属性，例如折射率，密度和/或声速。 还描述了适用于执行高强度聚焦超声（HIFU）的设备，以及HIFU和超声成像。
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159.发明申请COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME 有权补充金属氧化物半导体（CMOS）超声波传感器及其形成方法公开(公告)号：US20150251896A1
公开(公告)日：2015-09-10
申请号：US14711145
申请日：2015-05-13
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC分类号： B81B7/00
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
摘要翻译： 描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。
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公开(公告)号：US09028412B2
公开(公告)日：2015-05-12
申请号：US14191553
申请日：2014-02-27
CPC分类号： G01S7/52017 , A61B5/015 , A61B8/08 , A61B8/13 , A61B8/4209 , A61B8/4245 , A61B8/4254 , A61B8/4263 , A61B8/4477 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/56 , A61B8/565 , A61B17/320068 , A61B2090/378 , A61B2562/164 , A61N7/00 , A61N7/02 , A61N2007/0078 , G01S7/52019 , G01S7/52023
摘要： Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.
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