公开(公告)号：US06801409B2

公开(公告)日：2004-10-05

申请号：US09952725

申请日：2001-09-14

Applicant: Richard P. Michel ,  Mark T. Kief ,  Dehua Han ,  Venkateswara R. Inturi ,  Vladyslav A. Vas'ko

Inventor： Richard P. Michel ,  Mark T. Kief ,  Dehua Han ,  Venkateswara R. Inturi ,  Vladyslav A. Vas'ko

IPC: G11B539

CPC classification number: G11B5/3903 ,  G11B5/11 ,  G11B5/115 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/313 ,  Y10T29/49046

Abstract: A read head shield having improved stability includes a ferromagnetic (FM) layer and an anti-ferromagnetic (AFM) layer adjacent the FM layer. The FM layer has a patterned shape and a domain configuration that is defined by a plurality of local magnetic domains that are stabilized in accordance with the patterned shape. The AFM layer is annealed to imprint thereon the stabilized local magnetic domains of the FM layer. The AFM layer operates to increase the stability of the domain configuration of the FM layer thereby providing improved resistance to domain configuration shift caused by the application of a strong magnetic field.

Abstract translation: 具有改进的稳定性的读头屏蔽包括邻近FM层的铁磁（FM）层和反铁磁（AFM）层。 FM层具有由根据图案形状稳定的多个局部磁畴限定的图案形状和畴结构。 对AFM层进行退火以在其上压印FM层的稳定的局部磁畴。 AFM层操作以增加FM层的畴结构的稳定性，从而提供由施加强磁场引起的对域配置位移的改进的阻力。

公开(公告)号：US20040114285A1

公开(公告)日：2004-06-17

申请号：US10611557

申请日：2003-07-02

Applicant: Hitachi, Ltd.

Inventor： Chiaki Ishikawa ,  Hiroyuki Hoshiya

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268

Abstract: In a giant magnetoresistive head, a magnetic read width is reduced and a read output is increased. The giant magnetoresistive head has a magnetoresistive film having a pinned layer, a non-magnetic layer, and a free layer, a pair of terminals for applying a current to the magnetoresistive film, and bias applying means for applying a bias magnetic field for magnetic domain control to the free layer. The free layer has a sensing region and a pair of out-of-sensing-region regions on both ends of the sensing region. The magnetization direction of one of the out-of-sensing-region regions and the magnetization direction of the other out-of-sensing-region region have different components in a direction of element height of head. The magnetization of the one out-of-sensing-region region and the magnetization of the other out-of-sensing-region region are nearly symmetrical relative to the sensing region interposed therebetween.

Abstract translation: 在巨磁阻磁头中，磁读取宽度减小，读取输出增加。 巨磁电阻头具有具有钉扎层，非磁性层和自由层的磁阻膜，用于向磁阻膜施加电流的一对端子以及用于向磁畴施加偏置磁场的偏压施加装置 控制到自由层。 自由层在感测区域的两端具有感测区域和一对感测外区域区域。 感测外区域之一的磁化方向和另一个感测外区域的磁化方向在磁头的元件高度方向上具有不同的分量。 一个感测区域区域的磁化和另一个感测外区域的磁化相对于插入其间的感测区域几乎对称。

公开(公告)号：US06724584B2

公开(公告)日：2004-04-20

申请号：US10152192

申请日：2002-05-20

Applicant: Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

Inventor： Anthony M. Mack ,  Zheng Gao ,  Nurul Amin ,  Sining Mao ,  Richard Michel

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3113 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/304 ,  Y10T29/49034

Abstract: Methods of fabricating spin valve sensors in accordance with the invention include forming a pinning layer from an antiferromagnetic material and forming a synthetic antiferromagnet adjacent the pinning layer. A free ferromagnetic layer is formed, and exchange tabs are formed adjacent outer portions of the free ferromagnetic layer for biasing the free layer. The exchange tabs are formed from the same antiferromagnetic material as the first pinning layer. Then, the magnetic moments of the synthetic antiferromagnet are set, and the magnetic moment of the free ferromagnetic layer is biased, during a single anneal in the presence of a single magnetic field.

Abstract translation: 制造根据本发明的自旋阀传感器的方法包括从反铁磁材料形成钉扎层并在钉扎层附近形成合成的反铁磁体。 形成自由铁磁层，并且在自由铁磁层的外部附近形成交换突片以偏置自由层。 交换翼片由与第一钉扎层相同的反铁磁材料形成。 然后，在存在单个磁场的单次退火期间，设定合成反铁磁体的磁矩，并且自由铁磁层的磁矩被偏置。

公开(公告)号：US06710985B2

公开(公告)日：2004-03-23

申请号：US09735388

申请日：2000-12-12

Applicant: Kenji Noma

Inventor： Kenji Noma

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3272 ,  H01F41/325

Abstract: There is provided a magnetoresistive film in which an interlayer coupling field Hin is minimized and a large regeneration output is produced. A multilayered film includes an underlayer 1, an antiferromagnetic layer 2, a pinned magnetic layer 3, a nonmagnetic middle layer 4, and a free magnetic layer 5, the pinned magnetic layer comprises a first soft magnetic layer 3—1 and a second soft magnetic layer 3—3 formed of soft magnetic materials and an antiparallel coupling middle layer 3—2, formed between the soft magnetic layers, for coupling the magnetizations of the soft magnetic layers to each other in opposite directions, the antiferromagnetic layer comprises an ordered-form antiferromagnetic material including Mn, and a second underlayer 1—2 as a direct substrate of the antiferromagnetic layer comprises a metal selected from the group consisting of Ru, Os, Re, Tc, Cd, Ti, Zn, Al, Au, Ir, Pd, Pt, Rh, Ag, Nb, Mo, W, V, and &agr;-Ta or an alloy including an element of the selected metal.

Abstract translation: 提供了其中层间耦合场Hin最小化并产生大的再生输出的磁阻膜。 多层膜包括底层1，反铁磁层2，钉扎磁性层3，非磁性中间层4和自由磁性层5，钉扎磁性层包括第一软磁性层3-1和第二软磁性层 由软磁性材料形成的层3-3和形成在软磁性层之间的反平行耦合中间层3-2，用于将软磁性层的磁化彼此相反地相反地耦合，反铁磁层包括有序形式 包含Mn的反铁磁材料和作为反铁磁性层的直接衬底的第二底层1-2包括选自由Ru，Os，Re，Tc，Cd，Ti，Zn，Al，Au，Ir，Pd ，Pt，Rh，Ag，Nb，Mo，W，V和α-Ta或包含所选金属元素的合金。

公开(公告)号：US06710982B2

公开(公告)日：2004-03-23

申请号：US09886601

申请日：2001-06-21

Applicant: Anthony M. Mack ,  Ladislav R. Pust ,  Christopher J. Rea ,  Sunita Gangopadhyay ,  Patrick J. Ryan

Inventor： Anthony M. Mack ,  Ladislav R. Pust ,  Christopher J. Rea ,  Sunita Gangopadhyay ,  Patrick J. Ryan

IPC: G11B5127

CPC classification number: G11B5/3903 ,  G11B5/11 ,  G11B5/3113 ,  G11B5/3967 ,  G11B2005/0016

Abstract: A read/write head includes a bottom shield and a shared shield. The shared shield includes a first domain and a plurality of closure domains. The read/write head also includes a magnetoresistive sensor deposited adjacent an air bearing surface between the bottom shield and the shared shield. The magnetoresistive sensor includes a magnetoresistor aligned with the first domain. Non-magnetic material separates the magnetoresistive sensor from the bottom shield and the shared shield. The shared shield includes a shaped feature that defines an unambiguous direction of magnetization for the first domain.

Abstract translation: 读/写头包括底屏蔽和共享屏蔽。 共享屏蔽包括第一域和多个封闭域。 读/写头还包括与底屏蔽和共享屏蔽之间的空气支承表面相邻沉积的磁阻传感器。 磁阻传感器包括与第一域对准的磁阻。 非磁性材料将磁阻传感器与底部屏蔽和共享屏蔽分开。 共享屏蔽包括形状特征，其定义第一域的明确的磁化方向。

公开(公告)号：US20030189799A1

公开(公告)日：2003-10-09

申请号：US10219273

申请日：2002-08-16

Inventor： Yasunobu Yanagisawa ,  Akira Morinaga ,  Masatoshi Arasawa ,  Shuichi Kojima ,  Makoto Morijiri

IPC: G11B005/39

CPC classification number: G11B5/3903 ,  G11B5/3113 ,  G11B5/3929 ,  G11B5/3967 ,  Y10T29/49052

Abstract: A magnetoresistive reproducing head is manufactured by forming a magnetoresistive film and a lead layer continuously, then etching only the lead layer by using a first layer photo-resist pattern, forming a second layer photo-resistive pattern while leaving the first layer photo-resist pattern, etching the magnetoresistive film and then forming a domain control film and an outer lead layer, thereby enabling to avoid the effect at all on the positional relation between the lead layer and domain control film, whereby a head in which the riding amount of the lead layer on the magnetoresistive film is in right-to-left symmetry and the sensitivity profile is in right-to-left symmetry can be manufactured at a good yield.

Abstract translation: 通过连续地形成磁阻膜和引线层来制造磁阻再现头，然后通过使用第一层光致抗蚀剂图案仅蚀刻引线层，形成第二层光阻图案同时留下第一层光致抗蚀剂图案 ，蚀刻磁阻膜，然后形成畴控制膜和外引线层，从而能够避免对引线层和域控制膜之间的位置关系的影响，由此引导引线的引导量 磁阻膜上的层是从右到左的对称性，并且灵敏度分布可以从右到左的对称性以良好的产率制造。

公开(公告)号：US20030133231A1

公开(公告)日：2003-07-17

申请号：US10044513

申请日：2002-01-11

Applicant: International Business Machines Corporation

Inventor： Vladimir Nikitin ,  Jeffrey Gregory McCord ,  Murali Ramasubramanian

IPC: G11B005/147 ,  G11C011/15

CPC classification number: H01F41/34 ,  G11B5/3113 ,  G11B5/313 ,  G11B5/3143 ,  G11B5/8404 ,  H01F41/32

Abstract: A method for fabricating a soft ferromagnetic film structure with reduced edge stress anisotropy and enhanced magnetization switching speed. A soft ferromagnetic film structure is formed over an underlying structure. The soft ferromagnetic film structure has one or more edges exhibiting edge stress anisotropy. A non-ferromagnetic film structure is formed along the one or more edges to induce stress contributions therein that control the edge stress anisotropy.

Abstract translation: 一种制造具有降低的边缘应力各向异性和增强的磁化转换速度的软铁磁膜结构的方法。 在下面的结构上形成软铁磁膜结构。 软铁磁膜结构具有一个或多个边缘表现出边缘应力各向异性。 沿着一个或多个边缘形成非铁磁膜结构以在其中引起其中控制边缘应力各向异性的应力贡献。

公开(公告)号：US20030128464A1

公开(公告)日：2003-07-10

申请号：US10136973

申请日：2002-05-02

Applicant: Seagate Technology LLC

Inventor： Michael K. Minor

IPC: G11B005/147

CPC classification number: G11B5/3113 ,  G11B5/1278 ,  G11B5/3153

Abstract: A write pole for a magnetic recording head, such as a perpendicular magnetic recording head, includes a first layer of material adjacent a second layer of material. In one embodiment, the first layer of material has a saturation magnetic moment less than about 1.0 T and the second layer of material has a saturation magnetic moment greater than the saturation magnetic moment of the first layer of material. The first layer of material may include (NiFe)100nullyXy, wherein X comprises Cr, Cu and/or Ti and wherein y is in the range of about 2 to about 50.

Abstract translation: 用于诸如垂直磁记录头的磁记录头的写极包括邻近第二材料层的第一材料层。 在一个实施例中，第一层材料具有小于约1.0T的饱和磁矩，并且第二材料层的饱和磁矩大于第一层材料的饱和磁矩。 第一层材料可以包括（NiFe）100-yXy，其中X包括Cr，Cu和/或Ti，并且其中y在约2-约50的范围内。

公开(公告)号：US06552882B1

公开(公告)日：2003-04-22

申请号：US09384434

申请日：1999-08-27

Applicant: Kazuhiko Hayashi

Inventor： Kazuhiko Hayashi

IPC: G11B539

CPC classification number: B82Y10/00 ,  B82Y25/00 ,  G11B5/3113 ,  G11B5/3909 ,  G11B5/3925 ,  G11B5/3932

Abstract: The present invention provides a yoke-type information reproduction head apparatus 100 having a magnetic sensor block 3 provided on the substrate 1 via a non-magnetic insulation layer 2. The magnetic sensor 3 includes a ferromagnetic tunnel junction element 5 which is sandwiched between an upper electrode block 6 and a lower electrode block 7 and which is connected to a magnetic domain control bias layer 8. This enables to obtain preferable S/N and bit error rate with reduced waveform noise. This invention provides a yoke-type information reproduction head having both of the characteristics of the front yoke 4-1 as a magnetic path and a lower electrode 7 as an electric path.

公开(公告)号：US20020191334A1

公开(公告)日：2002-12-19

申请号：US09884607

申请日：2001-06-18

Inventor： Yimin Hsu ,  Hugo Alberto Emilio Santini ,  Neil Smith ,  Mason Lamar Williams

IPC: G11B005/17

CPC classification number: G11B5/3116 ,  G11B5/3113 ,  G11B5/313

Abstract: A magnetic transducer with a write head with one or more coil layers and a pedestal pole piece on P1 is disclosed. In one embodiment the first and second coils and the P1 pedestal are formed on essentially planarized surfaces which allows maximum precision to be obtained from the photolithography. The P1 pedestal defines the zero throat height (ZTH) with a 90 degree apex angle which cuts down flux leakage and improves efficiency. The P1 pedestal allows the coil turns to be located close to the write gap to increase the magnetic efficiency. The P1 pedestal also acts as a domain control element. The first and second coils are disposed on opposite sides of the gap layer. The write head preferably has upper and lower back flux closure pieces in contact with the pole pieces to complete the back of the yoke. Various combinations of these features allow heads according to the invention to be made with a very short yoke with resulting improved efficiency. In alternative embodiments the coil below the gap layer may be omitted and/or an additional coil above the gap layer may be added.

Abstract translation: 公开了一种具有一个或多个线圈层的写头和P1上的基座极片的磁换能器。 在一个实施例中，第一和第二线圈和P1基座形成在基本上平坦化的表面上，这允许从光刻获得最大精度。 P1基座定义零喉高度（ZTH），90度顶角可以减少漏磁，提高效率。 P1基座允许线圈匝位于靠近写间隙的位置，以提高磁效率。 P1基座也充当域控制元件。 第一和第二线圈设置在间隙层的相对侧上。 写头优选地具有与极片接触的上下磁通闭合件，以完成磁轭的后部。 这些特征的各种组合使得根据本发明的头部具有非常短的轭，从而提高效率。 在替代实施例中，间隙层下面的线圈可以被省略和/或可以添加间隙层上方的附加线圈。