公开(公告)号：US07179148B2

公开(公告)日：2007-02-20

申请号：US10963156

申请日：2004-10-12

Applicant: Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

IPC: H01J9/04

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

Abstract translation: 具有改进的功函数的阴极，用于诸如SCALPEL TM系统的光刻系统，其包括衬底和发射层之间的缓冲器，其中缓冲区改变，随机化，小型化和/或隔离 晶粒表面的晶粒结构减小晶粒尺寸，随机化晶体取向并降低晶体生长速率。 缓冲层可以是固溶体或多相合金。 通过在衬底的表面和发射层之间沉积缓冲剂来制造阴极的方法，其中沉积的缓冲液改变，随机化，小型化和/或隔离衬底表面处的晶粒结构以减小晶粒尺寸， 随机化晶体取向并降低晶体生长速率。

公开(公告)号：US07015056B2

公开(公告)日：2006-03-21

申请号：US10967900

申请日：2004-10-18

Applicant: Arman Gasparyan ,  Sungho Jin ,  Herbert R. Shea ,  Robert B. Van Dover ,  Wei Zhu

Inventor： Arman Gasparyan ,  Sungho Jin ,  Herbert R. Shea ,  Robert B. Van Dover ,  Wei Zhu

IPC: H01L21/00

CPC classification number: G02B6/3518 ,  B81B3/0035 ,  B81B2201/042 ,  G02B6/32 ,  G02B6/3544 ,  G02B6/356 ,  G02B6/357 ,  G02B6/3584 ,  G02B6/3594

Abstract: The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.

Abstract translation: 本发明提供一种微电子机械系统（MEMS）装置，因此制造方法以及包括该微机电系统的光通信系统。 该器件包括位于衬底上方的电极和位于接近并电耦合到衬底的电荷耗散层。 该装置还可以包括位于电极上方的可移动元件。

公开(公告)号：US20060057388A1

公开(公告)日：2006-03-16

申请号：US11223136

申请日：2005-09-12

Applicant: Sungho Jin ,  Dong-Wook Kim ,  In Yoo

Inventor： Sungho Jin ,  Dong-Wook Kim ,  In Yoo

IPC: C23C14/00 ,  B32B9/00

CPC classification number: H01M4/90 ,  B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B3/0021 ,  C01B32/178 ,  C01B2202/08 ,  H01J1/304 ,  H01J9/025 ,  H01J17/49 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0455 ,  H01M4/9083 ,  H01M4/92 ,  H01M4/926 ,  Y02E60/325 ,  Y10T428/30

Abstract: Aligned and open-ended nanotube structures, methods for making the same, and devices including open-ended nanotubes. An aligned and open-ended nanotube structure which is free of catalyst particles at top ends, the aligned and open-ended nanotube structure having an uneven open-end height with local protruding portions. A method of opening an end of a nanotube including a catalyst particle including sputter etching the nanotube to remove an amorphous layer, bend the nanotube to one side, open a hole in the nanotube, and cause detachment of the catalyst particle.

Abstract translation: 对齐和开放式纳米管结构，其制备方法以及包括开放式纳米管的器件。 在顶端没有催化剂颗粒的排列和开口的纳米管结构，对准和开口的纳米管结构具有不均匀的开口端高度，具有局部突出部分。 一种打开包括催化剂颗粒的纳米管末端的方法，包括溅射蚀刻纳米管以除去非晶层，将纳米管弯曲到一侧，在纳米管中打开孔，并引起催化剂颗粒的分离。

公开(公告)号：US20050142385A1

公开(公告)日：2005-06-30

申请号：US11020286

申请日：2004-12-23

Applicant: Sungho Jin

Inventor： Sungho Jin

IPC: G11B5/64 ,  G11B5/84 ,  G11B5/855

CPC classification number: G11B5/855 ,  B82Y10/00 ,  G11B5/642 ,  G11B5/84 ,  G11C2213/81 ,  Y10T428/25 ,  Y10T428/2938

Abstract: In accordance with the invention, a high density recording medium comprises an array of nanomagnets disposed within a matrix of material. The nanomagnets are advantageously substantially perpendicular to a planar surface. The nanomagnets are preferably nanowires of magnetic material or nanotubes filled or coated with magnetic material. Such media can provide ultra-high density recording with bit size less than 50 nm and even less than 20 nm. A variety of techniques are described for making such media.

Abstract translation: 根据本发明，高密度记录介质包括设置在材料矩阵内的纳米磁体阵列。 纳米磁体有利地基本上垂直于平坦表面。 纳米磁体优选为填充或涂覆有磁性材料的磁性材料或纳米线。 这种介质可以提供比特尺寸小于50nm甚至小于20nm的超高密度记录。 描述了制作这种介质的各种技术。

公开(公告)号：US06869815B2

公开(公告)日：2005-03-22

申请号：US10226930

申请日：2002-08-22

Applicant: Arman Gasparyan ,  Sungho Jin ,  Herbert R. Shea ,  Robert B. Van Dover ,  Wei Zhu

Inventor： Arman Gasparyan ,  Sungho Jin ,  Herbert R. Shea ,  Robert B. Van Dover ,  Wei Zhu

IPC: B81B3/00 ,  G02B6/32 ,  G02B6/35 ,  H01L21/00

CPC classification number: G02B6/3518 ,  B81B3/0035 ,  B81B2201/042 ,  G02B6/32 ,  G02B6/3544 ,  G02B6/356 ,  G02B6/357 ,  G02B6/3584 ,  G02B6/3594

Abstract: The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.

公开(公告)号：US20050046326A1

公开(公告)日：2005-03-03

申请号：US10963156

申请日：2004-10-12

Applicant: Sungho Jin ,  Victor Katsap ,  Warren Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren Waskiewicz ,  Wei Zhu

IPC: G03F7/20 ,  H01J1/15 ,  H01J1/18 ,  H01J9/02 ,  H01J9/04 ,  H01J37/06 ,  H01L21/027 ,  H01J1/14

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

Abstract translation: 具有改进的功函数的阴极，用于诸如SCALPEL TM系统的光刻系统，其包括衬底和发射层之间的缓冲器，其中缓冲区改变，随机化，小型化和/或隔离 晶粒表面的晶粒结构减小晶粒尺寸，随机化晶体取向并降低晶体生长速率。 缓冲层可以是固溶体或多相合金。 通过在衬底的表面和发射层之间沉积缓冲剂来制造阴极的方法，其中沉积的缓冲液改变，随机化，小型化和/或隔离衬底表面处的晶粒结构以减小晶粒尺寸， 随机化晶体取向并降低晶体生长速率。

公开(公告)号：US06815876B1

公开(公告)日：2004-11-09

申请号：US09338520

申请日：1999-06-23

Applicant: Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

Inventor： Sungho Jin ,  Victor Katsap ,  Warren K. Waskiewicz ,  Wei Zhu

IPC: H01J120

CPC classification number: H01J1/15 ,  H01J9/042 ,  H01J37/06 ,  H01J2237/3175

Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

公开(公告)号：US06639724B2

公开(公告)日：2003-10-28

申请号：US09874838

申请日：2001-06-05

Applicant: John Eric Bower ,  Michal E. Gross ,  Sungho Jin ,  Hareesh Mavoori ,  Ainissa Ramirez

Inventor： John Eric Bower ,  Michal E. Gross ,  Sungho Jin ,  Hareesh Mavoori ,  Ainissa Ramirez

IPC: G02B1320

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  B81C2201/017 ,  G02B6/3518 ,  G02B6/3548 ,  G02B6/356 ,  G02B6/3584 ,  G02B6/3588 ,  G02B6/3594 ,  G02B26/0841

Abstract: A device for use in a micro-electro-mechanical system (MEMS) optical device. The device includes a substrate having opposing first and second sides and a diffusion barrier layer formed over at least the first side. The device further includes a light reflective optical layer formed over the diffusion barrier layer on the first side of the substrate. The second side may desirably have a stress balancing layer located thereover.

公开(公告)号：US06403233B1

公开(公告)日：2002-06-11

申请号：US09548574

申请日：2000-04-13

Applicant: Sungho Jin ,  Guenther Wilhelm Kammlott ,  Hareesh Mavoori

Inventor： Sungho Jin ,  Guenther Wilhelm Kammlott ,  Hareesh Mavoori

IPC: B23K3524

CPC classification number: C22C5/02 ,  B23K35/3013 ,  B23K2101/36 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02284 ,  Y10T428/12889

Abstract: The invention relates to use of a solder composition exhibiting a desired combination of high creep resistance at typical operating temperatures and low stress in formed solder joints. The invention uses a solder containing 82 to 85 wt. % Au, 12 to 14 wt. % Sn, and 3 to 4 wt. % Ga (optionally with up to 2 wt. % additional elements). The small amount of added Ga induces a significant depression in the liquidus temperatures of both Au and Sn, and thus a depressed melting point (about 27° C. less than eutectic Au—Sn solder), and also provides an enhanced temperature-sensitivity of the solder's creep resistance.

Abstract translation: 本发明涉及一种焊料组合物在典型工作温度下表现出高抗蠕变性和在形成的焊点中的低应力的期望组合的用途。 本发明使用含有82〜85重量％ ％Au，12〜14wt。 ％Sn和3〜4wt。 ％Ga（任选地含有至多2重量％的附加元素）。 少量的添加的Ga在Au和Sn的液相线温度下引起显着的凹陷，因此熔点低（比共晶Au-Sn焊料低约27℃），并且还提供了增强的温度敏感性 焊料的抗蠕变性。

公开(公告)号：US06248394B1

公开(公告)日：2001-06-19

申请号：US09235735

申请日：1999-01-22

Applicant: Honghua Du ,  John Edwin Graebner ,  Sungho Jin ,  David Wilfred Johnson, Jr. ,  Wei Zhu

Inventor： Honghua Du ,  John Edwin Graebner ,  Sungho Jin ,  David Wilfred Johnson, Jr. ,  Wei Zhu

IPC: B05D300

CPC classification number: H01L41/316 ,  H01L41/319

Abstract: The invention provides a device comprising an oriented, perovskite PZT layer on a diamond substrate, or other substrates such as silicon or platinum-coated materials. Vapor phase deposition processes are used to deposit a PZT layer onto a perovskite template layer on the substrate. The template layer is more readily deposited in a perovskite structure compared to PZT, and provides for nucleation and growth of the deposited PZT in perovskite form. The vapor phase deposition promotes the oriented structure of the resulting film. The structure is useful in a variety of devices, including surface acoustic wave devices.

Abstract translation: 本发明提供了一种装置，其包括在金刚石基底上的取向的钙钛矿PZT层或其它基底例如硅或铂涂覆的材料。 气相沉积工艺用于将PZT层沉积在基底上的钙钛矿模板层上。 与PZT相比，模板层更容易沉积在钙钛矿结构中，并且提供沉积的PZT以钙钛矿形式的成核和生长。 气相沉积促进所得膜的定向结构。 该结构在各种装置中是有用的，包括表面声波装置。