公开(公告)号：US20150171224A1

公开(公告)日：2015-06-18

申请号：US14124104

申请日：2012-12-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng Liu ,  Chunping Long ,  Jang Soon Im

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1248 ,  H01L29/41733 ,  H01L29/6675

Abstract: Embodiments of the present invention relate to display technology field and provide a thin film transistor (1) and manufacturing method thereof, an array substrate, and a display device, and do not damage an active layer (12) of the thin film transistor while forming vias (16) over the source region (120) and the drain region (121) with via etching process. The thin film transistor (1) comprises a substrate (10), an active layer (12), a gate insulating layer (13), a gate (14) and an inter-layer insulating layer (17) disposed on the substrate (10), and further comprises: a conductive etching barrier layer (15) disposed on the active layer; the conductive etching barrier layer (15) being located to correspond to the source region (120) and the drain region (121) of the active layer (12) and vias (16) being formed over the source region (120) and the drain region (121) of the active layer (12) and not extending beyond edges of the conductive etching barrier layer (15).

Abstract translation: 本发明的实施例涉及显示技术领域并提供薄膜晶体管（1）及其制造方法，阵列基板和显示装置，并且不会在形成时损坏薄膜晶体管的有源层（12） 通过蚀刻工艺在源区（120）和漏区（121）之间的通路（16）。 薄膜晶体管（1）包括基板（10），有源层（12），栅极绝缘层（13），栅极（14）和布置在基板（10）上的层间绝缘层 ），还包括：设置在所述有源层上的导电蚀刻阻挡层（15） 所述导电蚀刻阻挡层（15）被定位成对应于有源层（12）的源极区域（120）和漏极区域（121）以及形成在源极区域（120）和漏极 （12）的区域（121），并且不延伸超过导电蚀刻阻挡层（15）的边缘。

公开(公告)号：US08951851B2

公开(公告)日：2015-02-10

申请号：US14086207

申请日：2013-11-21

Applicant: Boe Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Chunping Long

IPC: H01L29/66 ,  H01L21/02 ,  C30B13/24 ,  C30B29/06 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/08

CPC classification number: H01L21/02686 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0734 ,  B23K26/0738 ,  B23K26/083 ,  B23K26/352 ,  B23K2101/42 ,  B23K2103/56 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/66757

Abstract: A method of manufacturing a low temperature polysilicon film comprises: providing a substrate on a platform; forming a buffer layer on said substrate; forming an amorphous silicon layer on said buffer layer; and heating and annealing said amorphous silicon layer to allow said amorphous silicon layer to form a polycrystalline silicon layer; wherein a thermal insulating layer is formed on a bottom surface of said substrate or a top surface of the platform, before said buffer layer is formed on said substrate.

Abstract translation: 制造低温多晶硅膜的方法包括：在平台上提供衬底; 在所述衬底上形成缓冲层; 在所述缓冲层上形成非晶硅层; 并且对所述非晶硅层进行加热和退火以允许所述非晶硅层形成多晶硅层; 其中在所述衬底的底表面或所述平台的顶表面之前，在所述衬底上形成所述缓冲层之前，形成绝热层。