Methods for depositing gamma-prime nickel aluminide coatings
    116.
    发明授权
    Methods for depositing gamma-prime nickel aluminide coatings 有权
    沉积γ-Al金属铝镀层的方法

    公开(公告)号:US07357958B2

    公开(公告)日:2008-04-15

    申请号:US10904221

    申请日:2004-10-29

    Abstract: Methods for depositing an overlay coating on articles intended for use in hostile thermal environments. The coating has a predominantly gamma prime-phase nickel aluminide (Ni3Al) composition suitable for use as an environmental coating and as a bond coat of a thermal barrier coating system. The coating further contains at least one platinum group metal, preferably chromium, optionally one or more reactive elements, and optionally silicon. The coating is deposited by a process that entails forming a platinum group metal layer and at least one separate layer of other constituents of the coating, and then performing a diffusion heat treatment to yield the coating.

    Abstract translation: 将覆盖涂层沉积在旨在用于恶劣热环境的物品上的方法。 该涂层主要具有适合用作环境涂层和作为热障涂层系统的粘结层的γ初始相铝酸镍(Ni 3 Al 3 Al)组合物。 涂层还包含至少一种铂族金属,优选铬,任选的一种或多种反应性元素,以及任选的硅。 涂层通过需要形成铂族金属层和至少一层分开的涂层其它成分的方法沉积,然后进行扩散热处理以产生涂层。

    Magnetic recording medium, method of producing same, and magnetic storage apparatus
    117.
    发明申请
    Magnetic recording medium, method of producing same, and magnetic storage apparatus 审中-公开
    磁记录介质,其制造方法和磁存储装置

    公开(公告)号:US20070218316A1

    公开(公告)日:2007-09-20

    申请号:US11474402

    申请日:2006-06-26

    Inventor: Akihiro Inomata

    Abstract: A magnetic recording medium according to one aspect of the present invention includes a substrate; an underlayer positioned on the substrate and made of a material having a body-centered-cubic crystalline structure or a B2 crystalline structure; a first intermediate layer positioned on the underlayer and having a hexagonal closest packing crystalline structure, and being made of Co or a Co alloy; a second intermediate layer positioned on the first intermediate layer and having a hexagonal closest packing crystalline structure, and being made of a material selected from the group consisting of Ru, Ti, Re, Zr, Hf, and a Ru alloy; and a magnetic layer positioned on the second intermediate layer and including multiple magnetic grains each having a hexagonal closest packing crystalline structure and an axis of easy magnetization oriented in a direction substantially parallel to a surface of the substrate, wherein the magnetic grains are isolated from each other.

    Abstract translation: 根据本发明的一个方面的磁记录介质包括:基板; 位于基板上并由具有体心立方晶体结构或B2晶体结构的材料制成的底层; 第一中间层位于底层上并且具有六方最接近的填充结晶结构,并由Co或Co合金制成; 位于所述第一中间层上且具有六方最接近的填充结晶结构的第二中间层,并且由选自Ru,Ti,Re,Zr,Hf和Ru合金的材料制成; 以及磁性层,其位于所述第二中间层上,并且包括多个磁性颗粒,每个所述磁性颗粒具有六边形最接近的填充结晶结构,并且容易磁化的轴在基本上平行于所述衬底的表面的方向上定向, 其他。

    Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
    120.
    发明授权
    Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices 有权
    支持用于制造微电子,微电子或微机电器件的气体吸收材料的集成沉积

    公开(公告)号:US07180163B2

    公开(公告)日:2007-02-20

    申请号:US10211426

    申请日:2002-07-19

    Applicant: Marco Amiotti

    Inventor: Marco Amiotti

    Abstract: The specification teaches a device for use in the manufacturing of microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In a preferred embodiment the invention includes a mechanical supporting base, and a layer of a gas absorbing or purifier material is deposited on the base by a variety of techniques and a layer for temporary protection of the purification material is placed on top of the purification material. The temporary protection material is compatible for use in the microdevice and can be removed during the manufacture of the microdevice.

    Abstract translation: 本说明书教导了一种用于制造微电子,微电子或微机电器件(微器件)的器件,其中污染物吸收层改善了微器件的寿命和操作。 在优选实施例中,本发明包括机械支撑底座,并且通过各种技术将一层气体吸收或净化材料沉积在基座上,并且将用于临时保护净化材料的层放置在净化材料的顶部 。 临时保护材料与微型装置相兼容,并可在微型装置的制造过程中移除。

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