公开(公告)号：US10534279B1

公开(公告)日：2020-01-14

申请号：US16655164

申请日：2019-10-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zi-Wen Chen ,  Po-Chung Cheng ,  Chih-Tsung Shih ,  Li-Jui Chen ,  Shih-Chang Shih

IPC: G03F7/20 ,  G01B11/27 ,  G03F9/00 ,  G01M11/02

Abstract: Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.

公开(公告)号：US10524345B2

公开(公告)日：2019-12-31

申请号：US15946316

申请日：2018-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Jen-Hao Yeh ,  Han-Lung Chang ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  H01S3/104 ,  H01S3/11 ,  G21K1/06 ,  H01S3/23 ,  H01S3/223

Abstract: A laser system includes a laser source operable to provide a laser beam; a laser amplifier having an input port and an output port and operable to amplify the laser beam, the laser beam travelling along a main beam path through the laser amplifier from the input port to the output port; and a residual gain monitor operable to provide a probe laser beam, the probe laser beam travelling along a probe beam path through the laser amplifier from the output port to the input port, wherein the residual gain monitor calculates a residual gain of the laser amplifier according to the probe laser beam.

公开(公告)号：US10509334B2

公开(公告)日：2019-12-17

申请号：US15898813

申请日：2018-02-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zi-Wen Chen ,  Po-Chung Cheng ,  Chih-Tsung Shih ,  Li-Jui Chen ,  Shih-Chang Shih

IPC: G03F7/20 ,  G01B11/27 ,  G03F9/00 ,  G01M11/02

Abstract: Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.

公开(公告)号：US10461037B2

公开(公告)日：2019-10-29

申请号：US15797953

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Long-Yi Chen ,  Jia-Hong Chu ,  Chi-Wen Lai ,  Chia-Ching Liang ,  Kai-Hsiung Chen ,  Yu-Ching Wang ,  Po-Chung Cheng ,  Hsin-Chin Lin ,  Meng-Wei Chen ,  Kuei-Shun Chen

IPC: H01L23/544 ,  H01L21/768 ,  H01L21/67 ,  H01L21/66 ,  H01L21/033 ,  G03F9/00 ,  G03F7/20

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.

公开(公告)号：US10429314B2

公开(公告)日：2019-10-01

申请号：US15883971

申请日：2018-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Shang-Chieh Chien ,  Shang-Ying Wu ,  Li-Kai Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng ,  Anthony Yen ,  Chia-Chen Chen

IPC: G01N21/94 ,  G01N21/88 ,  G03F7/20 ,  H01L21/027 ,  G01N21/956

Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

公开(公告)号：US10342109B2

公开(公告)日：2019-07-02

申请号：US15906574

申请日：2018-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chih Lai ,  Han-Lung Chang ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G21K5/00

Abstract: A method of controlling an excitation laser includes detecting, at a droplet generator, a first signal of radiation scattered by a given target droplet irradiated by a first radiation source at a first position. The method of controlling the excitation laser further includes detecting, at the droplet generator, a second signal of radiation scattered by the given target droplet irradiated by a second radiation source at a second position a fixed distance away from the first position, and determining a speed of the given target droplet based on a time lag between the detecting of the first signal and the detecting of the second signal. The method further includes controlling a trigger time for triggering an excitation pulse for heating the given target droplet based on the determined speed of the given target droplet.

公开(公告)号：US10274844B1

公开(公告)日：2019-04-30

申请号：US15821932

申请日：2017-11-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jen-Yang Chung ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03B27/42 ,  G03F7/20

Abstract: A lithography apparatus is provided. The lithography apparatus includes a reticle stage. The reticle stage includes a main base, an electrostatic chuck and a safety protecting device. The electrostatic chuck is disposed on the main base and configured to generate an electrostatic force for holding a reticle. The safety protecting device is connected to the main base and is configured to generate a pushing force toward the reticle when the electrostatic force generated by the electrostatic chuck is interrupted.