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公开(公告)号:US20190140422A1
公开(公告)日:2019-05-09
申请号:US16115453
申请日:2018-08-28
申请人: FINISAR CORPORATION
发明人: Yasuhiro Matsui
CPC分类号: H01S5/1215 , H01S3/0635 , H01S5/0287 , H01S5/06251 , H01S5/06256 , H01S5/06258 , H01S5/12 , H01S5/1221 , H01S5/1225 , H01S5/125 , H01S5/141 , H01S5/34306 , H01S5/3432
摘要: A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (μm) to 100 μm and may include a DFB grating with a first kappa in a range from 100 cm−1 to 150 cm−1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 μm. The DBR region may include a DBR grating with a second kappa in a range from 150 cm−1 to 200 cm−1. The DR laser may additionally include a lasing mode and a p-p resonance frequency. The lasing mode may be at a long wavelength side of a peak of a DBR reflection profile of the DBR region. The p-p resonance frequency may be less than or equal to 70 GHz.
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102.
公开(公告)号:US10203461B2
公开(公告)日:2019-02-12
申请号:US14845916
申请日:2015-09-04
申请人: Raytheon Company
发明人: Roy Zamudio , Makan Mohageg
IPC分类号: G02B6/12 , G02B6/10 , G02B6/42 , G02B6/122 , G02B6/132 , C23C14/35 , C23C14/34 , H01S3/063 , H01S3/23 , H01S3/042 , H01S3/16
摘要: A method includes forming a coating that covers at least part of a conduction substrate, where the conduction substrate is configured to transport thermal energy. The method also includes forming at least part of an optical waveguide on the coating. The optical waveguide includes multiple cladding layers and a core, and the optical waveguide is configured to transport optical signals. The conduction substrate, the coating, and the optical waveguide form an integrated monolithic waveguide structure.
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公开(公告)号:US10185084B2
公开(公告)日:2019-01-22
申请号:US15050589
申请日:2016-02-23
申请人: Douglas Llewellyn Butler , Matthew John Dejneka , Daniel Warren Hawtof , Dale Robert Powers , Pushkar Tandon
发明人: Douglas Llewellyn Butler , Matthew John Dejneka , Daniel Warren Hawtof , Dale Robert Powers , Pushkar Tandon
IPC分类号: G02B6/02 , G02B6/10 , H01S3/063 , C03B19/14 , C03B23/037 , C03B23/047 , H01S3/17
摘要: Layered glass structures and fabrication methods are described. The methods include depositing soot on a dense glass substrate to form a composite structure and sintering the composite structure to form a layered glass structure. The dense glass substrate may be derived from an optical fiber preform that has been modified to include a planar surface. The composite structure may include one or more soot layers. The layered glass structure may be formed by combining multiple composite structures to form a stack, followed by sintering and fusing the stack. The layered glass structure may further be heated to softening and drawn to control linear dimensions. The layered glass structure or drawn layered glass structure may be configured as a planar waveguide.
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104.
公开(公告)号:US10156025B2
公开(公告)日:2018-12-18
申请号:US15146080
申请日:2016-05-04
申请人: CLEMSON UNIVERSITY
发明人: Joseph W. Kolis , Colin D. McMillen
摘要: Heterogeneous monolithic crystals that can include multiple regimes in a complex geometry are described. The crystals can be advantageously utilized in laser applications. The heterogeneous crystals can be created through growth of different regimes in interior voids formed in a seed crystal, which can in turn be homogeneous or heterogeneous. In one particular embodiment, a regime can be grown within a void of a seed crystal by use of a hydrothermal growth process. Formed crystals can be utilized in lasing and waveguiding applications, among others.
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公开(公告)号:US20180351323A1
公开(公告)日:2018-12-06
申请号:US15775366
申请日:2016-11-16
发明人: Ruffin E. EVANS , Alp SIPAHIGIL , Mikhail D. LUKIN
IPC分类号: H01S3/16 , H01S3/063 , H01S3/0941
CPC分类号: H01S3/1681 , C09K11/59 , C09K11/66 , G01N21/9505 , H01S3/063 , H01S3/0941 , H01S3/163 , H01S3/169
摘要: In an exemplary embodiment, a structure comprises a plurality of deterministically positioned optically active defects, wherein each of the plurality of deterministically positioned optically active defects has a linewidth within a factor of one hundred of a lifetime limited linewidth of optical transitions of the plurality of deterministically positioned optically active defects, and wherein the plurality of deterministically positioned optically active defects has an inhomogeneous distribution of wavelengths, wherein at least half of the plurality of deterministically positioned optically active defects have transition wavelengths within a less than 8 nm range. In a further exemplary embodiment, method of producing at least one optically active defect comprises deterministically implanting at least one ion in a structure using a focused ion beam; heating the structure in a vacuum at a first temperature to create at least one optically active defect; and heating the structure in the vacuum at a second temperature to remove a plurality of other defects in the structure, wherein the second temperature is higher than the first temperature.
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公开(公告)号:US20180331490A1
公开(公告)日:2018-11-15
申请号:US15977500
申请日:2018-05-11
申请人: Yale University
发明人: Peter Rakich , Nils Thomas Otterstrom , Eric Andrew Kittlaus , Ryan Orson Behunin , Zheng Barton Wang
CPC分类号: H01S3/30 , H01S3/063 , H01S3/094049 , H01S3/1068
摘要: Techniques for producing a Brillouin laser are provided. According to some aspects, techniques are based on forward Brillouin scattering and a multimode acousto-optic waveguide in which light is scattered between optical modes of the waveguide via the Brillouin scattering. This process may transfer energy from a waveguide mode of pump light to a waveguide mode of Stokes light. This process may be referred to herein as Stimulated Inter-Modal Brillouin Scattering (SIMS). Since SIMS is based on forward Brillouin scattering, laser (Stokes) light may be output in a different direction than back toward the input pump light, and as such there is no need for a circulator or other non-reciprocal device to protect the pump light as in conventional devices.
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公开(公告)号:US10109983B2
公开(公告)日:2018-10-23
申请号:US15140588
申请日:2016-04-28
摘要: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.
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公开(公告)号:US10032947B2
公开(公告)日:2018-07-24
申请号:US15083742
申请日:2016-03-29
申请人: X Development LLC
发明人: Martin F. Schubert
IPC分类号: H01L31/044 , H01L31/055 , G02B19/00 , H01S3/0915 , H01S3/16 , H01L31/054 , H01S3/063 , H01S3/093 , H01S3/094 , H01S3/06
摘要: A light concentrator includes a luminescent concentrator and a gain medium. The luminescent concentrator includes a semiconductor material and the semiconductor material absorbs first photons. The first photons have energy greater than or equal to a threshold energy, and the semiconductor material emits second photons through a spontaneous emission process where the second photons have less energy than the first photons. The gain medium is optically coupled to the luminescent concentrator to receive the second photons. The gain medium absorbs the second photons, and in response to absorbing the second photons, the gain medium emits third photons through a stimulated emission process. The third photons have less energy than the second photons.
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公开(公告)号:US20180198250A1
公开(公告)日:2018-07-12
申请号:US15737590
申请日:2015-08-07
发明人: Takeshi SAKIMURA , Yuhi KONO , Kohei SAKAI , Yukari TAKADA , Yojiro WATANABE , Fumio SHODA , Takayuki YANAGISAWA
CPC分类号: H01S3/063 , G02B6/122 , H01S3/0615 , H01S3/0621 , H01S3/0632 , H01S3/08018 , H01S3/08022 , H01S3/08077 , H01S3/08095 , H01S3/094
摘要: There are provided: a planar waveguide in which claddings (2) and (3) each having a smaller refractive index than a laser medium for absorbing pump light (5) are bonded to an upper surface (1a) and a lower surface (1b) of a core (1) which is formed from the laser medium; pump light generation sources (4a) and (4b) for emitting pump light (5) to side surfaces (1c) and (1d) of the core (1); and laser light high reflection films (6a) and (6b) formed on side surfaces (1e) and (1f) of the core (1). Each of side surfaces (2e) and (2f) of the cladding (2) corresponding to the side surfaces (1e) and (1f) of the core (1) has a ridge structure (20) in which a part thereof is recessed.
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公开(公告)号:US20180145474A1
公开(公告)日:2018-05-24
申请号:US15578301
申请日:2016-06-08
发明人: Yoshiyuki KONDO , Yuichi OTANI , Yoshiteru KOMURO , Atsushi KODAMA , Koichi HAMAMOTO , Hiroyuki DAIGO , Naoki INOUE , Tomoya MORIOKA , Masahiro KATO , Shingo NISHIKATA
CPC分类号: H01S3/042 , H01S3/005 , H01S3/025 , H01S3/0405 , H01S3/0407 , H01S3/0604 , H01S3/0612 , H01S3/0621 , H01S3/063 , H01S3/10007 , H01S3/1611 , H01S3/1643 , H01S3/1685 , H01S3/2316
摘要: A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.
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