公开(公告)号：US20190189453A1

公开(公告)日：2019-06-20

申请号：US16220816

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Swaminathan Srinivasan ,  Abhijit Basu Mallick ,  Nicolas Breil

IPC: H01L21/285 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/28518 ,  H01L21/02208 ,  H01L21/28562 ,  H01L29/66795 ,  H01L29/7851

Abstract: Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

公开(公告)号：US20190185993A1

公开(公告)日：2019-06-20

申请号：US16220794

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/18 ,  C23C16/455 ,  C23C14/00

CPC classification number: C23C16/18 ,  C07F15/0046 ,  C23C14/0047 ,  C23C16/45529 ,  C23C16/45542 ,  H01B1/06

Abstract: Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.

公开(公告)号：US20190185983A1

公开(公告)日：2019-06-20

申请号：US16225240

申请日：2018-12-19

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: C23C8/10 ,  C23C16/06

CPC classification number: C23C8/10 ,  C23C16/06

Abstract: Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

公开(公告)号：US10319636B2

公开(公告)日：2019-06-11

申请号：US15801949

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/266 ,  H01L21/762 ,  H01L21/768 ,  H01L21/3213

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US20180323068A1

公开(公告)日：2018-11-08

申请号：US15969119

申请日：2018-05-02

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Yihong Chen ,  Ziqing Duan ,  Rui Cheng ,  Shishi Jiang

IPC: H01L21/033

Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.

公开(公告)号：US20180308694A1

公开(公告)日：2018-10-25

申请号：US15951726

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziping Duan ,  Yong Wu ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/0332

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US20180298492A1

公开(公告)日：2018-10-18

申请号：US15978930

申请日：2018-05-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: C23C16/448 ,  C23C16/40 ,  C23C16/34 ,  H01L21/02

CPC classification number: C23C16/4486 ,  B05D1/02 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02153 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02271

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US10002757B2

公开(公告)日：2018-06-19

申请号：US15656045

申请日：2017-07-21

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Shaunak Mukherjee ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/455 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/033

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

公开(公告)号：US20170114453A1

公开(公告)日：2017-04-27

申请号：US15297257

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Kelvin Chan ,  Karthik Janakiraman ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: C23C16/24 ,  C23C16/455

CPC classification number: C23C16/24 ,  C23C16/04 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/4584

Abstract: Methods for depositing film comprising cyclical exposure of a substrate surface to a precursor and a degas environment to remove gas evolved from the film. Some embodiments further comprise the incorporation poisoning the top of a feature to inhibit film growth at the top of the feature. Some embodiments further comprising etching a portion of the film deposited at the top of a feature between cycles to increase gap-fill uniformity.

公开(公告)号：US09583333B2

公开(公告)日：2017-02-28

申请号：US14520721

申请日：2014-10-22

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4411 ,  C23C16/452 ,  C23C16/45582 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274

Abstract: Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

Abstract translation: 本发明的实施方案通常提供在衬底上形成氮化硅层的方法。 在一个实施例中，公开了在小于300摄氏度的温度下使用远程等离子体化学气相沉积（CVD）形成氮化硅层的方法。 用于远程等离子体CVD工艺的前体包括三（二甲基氨基）硅烷（TRIS），二氯硅烷（DCS），三甲基胺（TSA），双 - 叔丁基氨基硅烷（BTBAS），六氯二硅烷（HCDS）或六甲基环三硅氮烷（HMCTZ）。