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公开(公告)号：US20240019779A1
公开(公告)日：2024-01-18
申请号：US17749880
申请日：2022-05-20
发明人： Li Cui , Emad Aqad , Yinjie Cen , Conner A. Hoelzel , James F. Cameron , Jong Keun Park , Suzanne M. Coley , Choong-Bong Lee
IPC分类号： G03F7/004 , C07C317/22 , C07C69/78
CPC分类号： G03F7/0045 , C07C317/22 , C07C2601/16 , C07C2601/08 , C07C69/78
摘要： A compound represented by Formula (1):
wherein X is a group having a valency of r; each R1 is independently an organic group comprising an acid-labile group; m is an integer greater than or equal to 1; k is an integer from 1 to 5; and r is an integer from 2 to 10, wherein the compound is non-polymeric, and wherein Ar1, L1, L2, R2, and R3 are as defined herein.-
92.发明授权公开(公告)号：US11874600B2
公开(公告)日：2024-01-16
申请号：US17712953
申请日：2022-04-04
申请人： Intel Corporation
CPC分类号： G03F7/0043 , G03F7/2004 , B82Y30/00 , B82Y40/00 , G03F7/0048
摘要： A photosensitive composition including metal nanoparticles capped with an organic ligand, wherein the metal particles includes a metal that absorbs light in the extreme ultraviolet spectrum. A method including synthesizing metal particles including a diameter of 5 nanometers or less, wherein the metal particles includes a metal that absorbs light in the extreme ultraviolet spectrum; and capping the metal particles with an organic ligand. A method including depositing a photosensitive composition on a semiconductor substrate, wherein the photosensitive composition includes metal nanoparticles capped with an organic ligand and the nanoparticles include a metal that absorbs light in the extreme ultraviolet spectrum; exposing the photosensitive composition to light in an ultraviolet spectrum through a mask including a pattern; and transferring the mask pattern to the photosensitive composition.
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公开(公告)号：US11860541B2
公开(公告)日：2024-01-02
申请号：US17048301
申请日：2020-03-25
发明人： Xue Dong , Guangcai Yuan , Feng Guan
IPC分类号： H01L27/32 , H01L51/50 , H01L51/56 , G03F7/075 , G03F7/00 , G03F7/004 , G03F7/11 , H01L29/06 , H01L29/786 , B82Y30/00 , B82Y40/00 , C01B33/021
CPC分类号： G03F7/075 , G03F7/0002 , G03F7/0047 , G03F7/11 , H01L29/0669 , H01L29/78651 , H01L29/78696 , B82Y30/00 , B82Y40/00 , C01B33/021 , C01P2004/16
摘要： The present disclosure discloses a silicon-based nanowire, a preparation method thereof, and a thin film transistor. By using a eutectic point of catalyst particles and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon, and due to absorption of the amorphous silicon by the molten catalyst particles to form a supersaturated silicon eutectoid, the silicon nucleates and grows into silicon-based nanowires. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide slots under the action of the catalyst particles, and reverse growth of the silicon-based nanowire is restricted by the retaining walls, thus obtaining silicon-based nanowires with a high density and high uniformity. Furthermore, by controlling the size of the catalyst particles and the thickness of the amorphous silicon film, the width of the silicon-based nanowire may also be controlled.
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公开(公告)号：US20230418158A1
公开(公告)日：2023-12-28
申请号：US18317019
申请日：2023-05-12
发明人： Masahiro FUKUSHIMA , Satoshi WATANABE , Jun HATAKEYAMA , Keiichi MASUNAGA , Masaaki KOTAKE , Yuta MATSUZAWA
IPC分类号： G03F7/004 , C07C381/12 , C07D307/00 , C07C309/73 , C07C309/42 , C07C309/12 , C07D321/10 , C07D327/08
CPC分类号： G03F7/0045 , C07C381/12 , C07D307/00 , C07C309/73 , C07C309/42 , C07C309/12 , C07D321/10 , C07D327/08 , C07C2601/08 , C07C2602/42 , C07C2601/14 , C07C2603/68
摘要： The present invention is a sulfonium salt represented by the following formula (1),
wherein “p” represents an integer of 1 to 3; R11 represents a hydrocarbyl group having 1 to 20 carbon atoms; Rf represents a fluorine atom or a fluorine-atom-containing C1 to C6 group selected from alkyl, alkoxy, and sulfide; “q” represents an integer of 1 to 4; RALU represents an acid-labile group; “r” represents an integer of 1 to 4; R12 represents a hydrocarbyl group having 1 to 20 carbon atoms; “s” represents an integer of 0 to 4; “t” represents an integer of 0 to 2; Rf and —O—RALU are bonded to adjacent carbon atoms; and X− represents a non-nucleophilic counterion having no polymerizable group. This provides a sulfonium salt used for a resist composition having excellent solvent solubility, high sensitivity and high contrast, and excellent lithographic performance such as exposure latitude and LWR; a resist composition containing the sulfonium salt as a photoacid generator; and a patterning process using the resist composition.-
95.发明公开公开(公告)号：US20230416451A1
公开(公告)日：2023-12-28
申请号：US18239373
申请日：2023-08-29
申请人： JSR CORPORATION
发明人： Shuhei YAMADA , Shinya ABE , Takashi TSUJI , Kanako UEDA , Hiroki NAKATSU , Hiroyuki MIYAUCHI
CPC分类号： C08G61/02 , G03F7/0048 , G03F7/0388 , G03F7/0382 , G03F7/0397
摘要： A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).
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公开(公告)号：US11851593B2
公开(公告)日：2023-12-26
申请号：US17351376
申请日：2021-06-18
发明人： Zhuo Chen , Tieshi Wang
CPC分类号： C09K11/06 , G03F7/0042 , H10K50/115 , H10K71/00 , B82Y20/00 , B82Y40/00
摘要： The present disclosure discloses a nanoparticle, a nanoparticle layer patterning method and related application. When the nanoparticle disclosed by the present disclosure is adopted to form a patterned nanoparticle layer on a substrate, a photosensitive material is added in the nanoparticle, then a protective group in a first ligand is dissociated to form an amino under the irradiation of light with a preset wavelength, a second ligand including an amino is formed on a surface of a nanometer particle, and a polarity of the second ligand is different from a polarity of the first ligand; and the amino of the second ligand is cross-linked with an adjacent nanoparticle.
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公开(公告)号：US20230400766A1
公开(公告)日：2023-12-14
申请号：US18207250
申请日：2023-06-08
发明人： Masahiro Fukushima
CPC分类号： G03F7/029 , G03F7/0045 , G03F7/2006
摘要： A resist composition is provided comprising as a quencher an onium salt having an anion moiety whose conjugate acid is decomposed under the action of acid and heat into carbon dioxide and an organic compound of up to 12 carbon atoms. When processed by deep-UV, EB or EUV lithography, the resist composition exhibits an improved LWR and resolution and prevents the resist pattern from collapsing.
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公开(公告)号：US20230393474A1
公开(公告)日：2023-12-07
申请号：US18231447
申请日：2023-08-08
发明人： An-Ren ZI , Ching-Yu Chang
IPC分类号： G03F7/09 , G03F7/039 , C08L101/02 , G03F7/004 , G03F7/26
CPC分类号： G03F7/094 , G03F7/039 , C08L101/02 , G03F7/0042 , G03F7/26
摘要： A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.
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公开(公告)号：US20230393468A1
公开(公告)日：2023-12-07
申请号：US18454439
申请日：2023-08-23
申请人： FUJIFILM Corporation
发明人： Shunsuke YANAGI , Kohel Aizu , Akira Sakaguchi
CPC分类号： G03F7/031 , G03F7/0048
摘要： Provided is an on-press development type planographic printing plate precursor having a support and an image-recording layer on the support, in which the image-recording layer contains a compound represented by Formula 1 or Formula 2 and an organic compound having a group 13 element. Also provided are a method of preparing a planographic printing plate or a planographic printing method in which the on-press development type planographic printing plate precursor is used, and a coloring agent represented by Formula 1 or Formula 2. In Formula 1 and Formula 2, R1 to R7 each independently represent a hydrogen atom or a monovalent organic group, and L1 and L2 represent a divalent organic group.
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公开(公告)号：US11835860B2
公开(公告)日：2023-12-05
申请号：US17368956
申请日：2021-07-07
发明人： Jun Hatakeyama
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2006 , G03F7/32
摘要： A resist composition comprising an ammonium salt and fluorine-containing polymer comprising repeat units AU having an ammonium salt structure of an iodized or brominated phenol compound and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone.
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