公开(公告)号：US20020044268A1

公开(公告)日：2002-04-18

申请号：US09971663

申请日：2001-10-09

Inventor： Takako Yamaguchi ,  Ryo Kuroda

IPC: G03B027/42

CPC classification number: G03F7/70458 ,  G03B27/42

Abstract: A pattern forming apparatus for forming a pattern on a substrate comprising a first exposure section capable of pattern exposure for a predetermined line width, a second exposure section for conducting pattern exposure for a line width greater than the predetermined line width of the first exposure section, and a means for detecting the relative positional relationship between the first exposure section and the second exposure section, wherein pattern exposure is conducted by using the first exposure section and the second exposure section on the basis of the detected positional relationship.

Abstract translation: 一种用于在基板上形成图案的图案形成装置，包括能够以预定线宽度进行图案曝光的第一曝光部分，用于对大于第一曝光部分的预定线宽度的线宽进行图案曝光的第二曝光部分， 以及用于检测第一曝光部分和第二曝光部分之间的相对位置关系的装置，其中，基于检测到的位置关系，通过使用第一曝光部分和第二曝光部分进行图案曝光。

公开(公告)号：US20010036604A1

公开(公告)日：2001-11-01

申请号：US09796541

申请日：2001-03-02

Inventor： Miyoko Kawashima

IPC: G03F007/20

CPC classification number: G03F7/7025 ,  G03F7/70458 ,  G03F7/70466

Abstract: Disclosed is an exposure method in which a multiple exposure process including a first exposure for a first pattern and a second exposure for a second pattern is performed by use of a projection optical system to thereby resolve a desired pattern, wherein a numerical aperture NA1 of the projection optical system for the first pattern exposure and a numerical aperture NA2 of the projection optical system for the second pattern exposure are made different from each other.

Abstract translation: 公开了一种曝光方法，其中通过使用投影光学系统来执行包括用于第一图案的第一曝光和第二图案的第二曝光的多次曝光处理，从而分辨所需图案，其中所述图案的数值孔径NA1 用于第一图案曝光的投影光学系统和用于第二图案曝光的投影光学系统的数值孔径NA2彼此不同。

公开(公告)号：US6023068A

公开(公告)日：2000-02-08

申请号：US968865

申请日：1997-11-05

Applicant: Kazuo Takahashi

Inventor： Kazuo Takahashi

IPC: G03F7/20 ,  H01L21/30

CPC classification number: G03F7/70458 ,  G03F7/7045 ,  G03F7/70716 ,  G03F7/70775 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70991

Abstract: An apparatus for semiconductor device manufacture is disclosed, which apparatus includes first and second, different exposure systems each for forming an image of a circuit pattern on a substrate coated with a photosensitive material, and a stationary member for supporting the first and second exposure systems.

Abstract translation: 公开了一种用于半导体器件制造的装置，该装置包括第一和第二不同的曝光系统，每个用于在涂覆有感光材料的基底上形成电路图案的图像，以及用于支撑第一和第二曝光系统的固定部件。

公开(公告)号：US5879843A

公开(公告)日：1999-03-09

申请号：US7362

申请日：1998-01-15

Applicant: Atsushi Ueno

Inventor： Atsushi Ueno

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F7/70633 ,  G03F7/70425 ,  G03F7/70458 ,  G03F9/70

Abstract: A method of reducing a registration error is provided in which the registration error can be uniformly distributed even if an amount of displacement is larger than others at only one of a plurality of measuring points. According to the method, amounts of displacement are measured first at a plurality of measuring points, then one half the sum of the maximum value and the minimum value of the measured amounts of displacement is calculated to obtain a correction value. The correction value is fed back to an exposure apparatus as a correction value for an exposure condition setting file within the exposure apparatus used in an exposure step. The registration error can be distributed uniformly even if amounts of displacement at a plurality of measuring points are considerably different from each other.

Abstract translation: 提供了一种降低配准误差的方法，其中即使在仅多个测量点中的一个测量点处的位移量大于其他位置时，配准误差也可以均匀分布。 根据该方法，首先在多个测量点测量位移量，然后计算测量的位移量的最大值和最小值之和的一半以获得校正值。 将校正值反馈到曝光装置，作为曝光步骤中使用的曝光装置内的曝光条件设定文件的校正值。 即使在多个测量点处的位移量彼此大不相同，也可以均匀地分布配准误差。

公开(公告)号：US5844672A

公开(公告)日：1998-12-01

申请号：US959542

申请日：1997-10-24

Applicant: Byung In Kwon

Inventor： Byung In Kwon

IPC: G01M11/02 ,  G03F7/20 ,  G01B11/00

CPC classification number: G01M11/0264 ,  G03F7/70241 ,  G03F7/70433 ,  G03F7/70458 ,  G03F7/706 ,  G03F7/70633

Abstract: The mask for checking lens distortion comprises a plurality of mother verniers formed at each portion of the quartz and a plurality of the daughter verniers spaced from each of the plurality of the mother verniers.

Abstract translation: 用于检查透镜失真的掩模包括形成在石英的每个部分处的多个母游标，以及与多个母游标中的每一个间隔开的多个子游标。

公开(公告)号：US5122440A

公开(公告)日：1992-06-16

申请号：US519321

申请日：1990-05-07

Applicant: Chung-Ping Chien

Inventor： Chung-Ping Chien

IPC: G03F7/20 ,  H05K3/00 ,  H05K3/46

CPC classification number: G03F7/70458 ,  G03F7/70466 ,  H05K3/0082 ,  H05K3/4644

Abstract: Photosensitive polyimides used in microelectronic structures are cross-linked without exposing the associated microelectronic structures to elevated temperatures that can lower the process yield and reduce the reliability of the microelectronic structures. The photosensitive polyimides are cured by exposing them to deep ultraviolet radiation that has a spectral output effective to crosslink the polyimide. The cross-linking hardens the polyimide and renders it insoluble in solvents such as photoresist strippers.

Abstract translation: 用于微电子结构的光敏聚酰亚胺是交联的，而不会将相关的微电子结构暴露于升高的温度，这可以降低工艺产量并降低微电子结构的可靠性。 通过将感光性聚酰亚胺暴露于具有有效交联聚酰亚胺的光谱输出的深紫外线辐射而固化。 交联使聚酰亚胺硬化并使其不溶于溶剂如光致抗蚀剂剥离剂。

公开(公告)号：US20240288778A1

公开(公告)日：2024-08-29

申请号：US18115145

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Ying-Chiao Wang ,  Thomas L Laidig ,  Chun-Chih Chuang ,  Frederick Lie ,  Chen-Yuan Hsieh ,  Chun-Cheng Yeh

IPC: G03F7/20

CPC classification number: G03F7/704 ,  G03F7/70458 ,  G03F7/70475 ,  G03F7/70525

Abstract: A digital lithography system includes adjacent scan regions, exposure units located above the scan regions, a memory, and a processing device operatively coupled to the memory. The exposure units include a first exposure unit associated with a first scan region and a second exposure unit associated with a second scan region. The processing device is to initiate a digital lithography process to pattern a substrate disposed on a stage in accordance with instructions. The processing device is to further perform a first pass of the first exposure unit over a stitching region at an interface of the first scan region and the second scan region at a first time. The processing device is to further perform a second pass of the second exposure unit over the stitching region at a second time that varies from the first time by less than forty seconds.

公开(公告)号：US20230341783A1

公开(公告)日：2023-10-26

申请号：US17796434

申请日：2021-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Arnaud HUBAUX ,  Patrick WARNAAR ,  Scott Anderson MIDDLEBROOKS ,  Tijmen Pieter COLLIGNON ,  Chung-Hsun LI ,  Georgios TSIROGIANNIS ,  Sayyed Mojtaba SHAKERI

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70458 ,  G03F7/70633

Abstract: A method of determining matching performance between tools used in semiconductor manufacture and associated tools is described. The method includes obtaining a plurality of data sets related to a plurality of tools and a representation of the data sets in a reduced space having a reduced dimensionality. A matching metric and/or matching correction is determined based on matching the reduced data sets in the reduced space.

公开(公告)号：US20170003602A1

公开(公告)日：2017-01-05

申请号：US15104596

申请日：2014-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SWISSLITHO AG

Inventor： URS T DUERIG ,  STEFAN FRINGES ,  FELIX HOLZNER ,  ARMIN W KNOLL

IPC: G03F7/20

CPC classification number: G03F7/70591 ,  G03F7/70383 ,  G03F7/7045 ,  G03F7/70458

Abstract: The present invention provides a method for multiscale patterning of a sample. The method includes: placing the sample in an apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability; and patterning two patterns onto the sample, respectively by: thermo-optical lithography, wherein light is emitted from a light source onto the sample to heat the latter and thereby write a first pattern that is the largest of the two patterns; and thermal scanning probe lithography, wherein the sample and a heated probe tip are brought in contact for writing a second pattern that has substantially smaller critical dimensions than the first pattern. There is also provided an apparatus for multiscale patterning of a sample.

Abstract translation: 本发明提供一种用于样品的多尺度图案化的方法。 该方法包括：将样品放置在具有热光学光刻能力和热扫描探针光刻能力的设备中; 并且通过以下方式分别将两个图案图案化：样品上的热光学光刻，其中光从光源发射到样品上以加热样品，从而写出两个图案中最大的第一图案; 和热扫描探针光刻，其中使样品和加热的探针尖端接触以写入具有比第一图案明显更小的临界尺寸的第二图案。 还提供了一种用于样品的多尺度图案化的装置。

公开(公告)号：US09158208B2

公开(公告)日：2015-10-13

申请号：US13182416

申请日：2011-07-13

Applicant: Jun Ye ,  Yu Cao

Inventor： Jun Ye ,  Yu Cao

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70125 ,  G03F7/70458 ,  G03F7/70516 ,  G03F7/70525

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.