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公开(公告)号：US20170315748A1
公开(公告)日：2017-11-02
申请号：US15531415
申请日：2015-11-30
发明人： Dongmei Lei
CPC分类号： G06F3/0638 , G06F3/0604 , G06F3/0656 , G06F3/0673 , H03H17/02 , H03H17/0263 , H04N19/42 , H04N19/80
摘要： A median filter device is provided with a reordered circuit, a comparison circuit and a data refresh circuit on the basis of the conventional data buffer circuit and data register circuit. The reorder circuit re-sorts the signal data stored in the data buffer circuit in a preceding clock cycle according to their numerical values. The comparison circuit compares the new signal datum entered in the current clock cycle with the signal data already stored to generate a median. The data refresh circuit updates the signal codes stored in the data register circuit with the signal codes corresponding to the new signal data, for calculation of the median in a following clock cycle. The length of the data buffer circuit and data register circuit can be reduced from N signal data to N-1 signal data, which achieves less data storage capacity, smaller circuit area, easier data processing and higher operation efficiency.
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公开(公告)号：US09681234B2
公开(公告)日：2017-06-13
申请号：US14889433
申请日：2013-12-10
发明人： Chao Yuan , Xiaoxu Kang , Qingyun Zuo
CPC分类号： H04R19/04 , B81B2201/0257 , B81C1/00571 , H04R19/005 , H04R31/003 , H04S7/00 , H04S2420/01
摘要： A MEMS microphone structure, comprising a semiconductor substrate having a cavity, a first dielectric layer having a through-hole communicating with the cavity, a lower diaphragm electrode formed above the through-hole and at least partially attached to the upper surface of the first dielectric layer, and an upper electrode structure with an insulating layer. The upper electrode structure comprises an annular supporter, a back plate having multiple holes, and an upper electrode connection. At least a part of the annular supporter extends downwardly to the lower diaphragm electrode while the rest of the annular supporter extends downwardly to the substrate. The back plate is suspended above the lower diaphragm electrode by the annular supporter, forming an air gap therebetween. An upper electrode is embedded in the insulating layer at the back plate and is lead out by the upper electrode connection.
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公开(公告)号：US09640434B2
公开(公告)日：2017-05-02
申请号：US14759227
申请日：2014-08-25
发明人： Hong Lin
IPC分类号： H01L21/00 , H01L21/768 , H01L21/02 , H01L21/321
CPC分类号： H01L21/76879 , H01L21/02126 , H01L21/02167 , H01L21/3212 , H01L21/76802 , H01L21/7685 , H01L21/76883
摘要： A method for processing an electroplated copper film in copper interconnect process is disclosed by the present invention. Firstly, in the copper back-end-of-line interconnect process, the first annealing process for the electroplated copper film is performed at or below 180° C.; then, after the copper back-end-of-line interconnect process, another annealing process with higher temperature (equal or above 240° C.) to the electroplated copper film is performed to make the copper recrystallize, so as to decrease the resistivity of the electroplated copper film and form an interface state having lower resistivity at the interface of the vias bottom, which decrease the contact resistance between the vias and the underlying copper interconnects and further reduce the RC time delay in the vias. The present invention can be applied in the Cu/Low-k back-end-of-line interconnect process and compatible with the standard Cu/Low-k back-end-of-line process integration.
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公开(公告)号：US09368565B2
公开(公告)日：2016-06-14
申请号：US13884970
申请日：2012-02-07
申请人： Qingyun Zuo , Xiaoxu Kang , Shaohai Zeng
发明人： Qingyun Zuo , Xiaoxu Kang , Shaohai Zeng
IPC分类号： H01L21/33 , H01L21/00 , H01L49/02 , H01L23/522 , H01L23/532
CPC分类号： H01L28/20 , H01L23/5228 , H01L23/53238 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for manufacturing a semiconductor device with a metal film resistor structure. The method includes providing an insulation layer on the semiconductor device. A lower copper interconnect is formed in the insulation layer. The method also includes forming a cap layer on the insulation layer and the lower copper interconnect and etching the cap layer based on a single photolithography mask to form a window exposing portion of the lower copper interconnect and portion of the insulation layer. Further, the method includes forming a metal film layer on the cap layer and inside the window such that exposed portion of the lower copper interconnect is connected with part of the metal film layer within the window. The method also includes performing a chemical mechanical polishing (CMP) process to form a metal film resistor based on the metal film layer. The metal film resistor is connected with the portion of the lower copper interconnect.
摘要翻译： 提供一种用于制造具有金属膜电阻器结构的半导体器件的方法。 该方法包括在半导体器件上提供绝缘层。 在绝缘层中形成较低的铜互连。 该方法还包括在绝缘层和下铜互连上形成覆盖层，并且基于单个光刻掩模蚀刻覆盖层以形成下铜互连和绝缘层的一部分的窗口暴露部分。 此外，该方法包括在盖层和窗内部形成金属膜层，使得下铜互连的暴露部分与窗内的金属膜层的一部分连接。 该方法还包括进行化学机械抛光（CMP）工艺以形成基于金属膜层的金属膜电阻器。 金属膜电阻器与下部铜互连部分连接。
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95.发明授权Impulse radio ultra wide bandwidth data transmission encoding/decoding method and encoding/decoding module 有权脉冲无线超宽带宽数据传输编解码方式及编解码模块公开(公告)号：US08934517B1
公开(公告)日：2015-01-13
申请号：US14369194
申请日：2012-11-21
发明人： Chen Li
IPC分类号： H04B1/00 , H04B1/7176 , H04B1/69
CPC分类号： H04B1/7176 , H04B2001/6908 , H04L27/02 , H04L27/10 , H04L27/34
摘要： The present invention provides an IR-UWB data transmission encoding/decoding method and module. The encoding method comprises: in each unit time period lasting T seconds, receiving an N-bit of binary data of an M-bit binary data stream and generating UWB impulse radio signal having a specific frequency fi, determining and generating an amplitude value Ax of the UWB impulse radio signal having the specific frequency fi according to the remaining M-N bits binary data, and finally transmitting the UWB impulse radio signal having the specific frequency fi and the amplitude value. The decoding method corresponds to the encoding method. According to the present invention, the data transmission rate can be increased by four times compared with the conventional data transmission rate without increasing the circuit complexity, which is useful and attractive to the IR-UWB system.
摘要翻译： 本发明提供一种IR-UWB数据传输编码/解码方法和模块。 编码方法包括：在持续T秒的每个单位时间段内，接收M位二进制数据流的N位二进制数据并生成具有特定频率fi的UWB脉冲无线电信号，确定并产生具有特定频率fi的幅度值Ax UWB脉冲无线电信号具有根据剩余的MN比特二进制数据的特定频率fi，最后传输具有特定频率fi的UWB脉冲无线电信号和振幅值。 解码方法对应于编码方法。 根据本发明，与传统的数据传输速率相比，数据传输速率可以提高四倍，而不增加电路复杂度，这对IR-UWB系统是有用的和有吸引力的。
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公开(公告)号：US20140138835A1
公开(公告)日：2014-05-22
申请号：US14125314
申请日：2011-12-20
申请人： Yuhang Zhao , Xiaoxu Kang
发明人： Yuhang Zhao , Xiaoxu Kang
IPC分类号： H01L21/768 , H01L23/528
CPC分类号： H01L21/7682 , H01L21/76804 , H01L21/76807 , H01L23/528 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method is disclosed for manufacturing a semiconductor device with a copper interconnect structure. The method includes providing a substrate, forming a first interconnect dielectric layer on the substrate, and forming a second interconnect dielectric layer on a surface of the first interconnect dielectric layer. The method also includes forming a plurality of conduits extending through the first interconnect dielectric layer and the second interconnect dielectric layer, and depositing copper in the plurality of conduits to form a copper interconnect layer of the copper interconnect structure. Further, the first interconnect dielectric layer, between neighboring conduits, contains cavities such that dielectric constant of the first interconnect dielectric layer is reduced. The second interconnect dielectric layer seals the top of the cavities, the substrate is the bottom of the cavities, and a width of the top of the cavities is less than a width of the bottom of the cavities.
摘要翻译： 公开了一种用于制造具有铜互连结构的半导体器件的方法。 该方法包括提供衬底，在衬底上形成第一互连电介质层，以及在第一互连电介质层的表面上形成第二互连电介质层。 该方法还包括形成延伸穿过第一互连电介质层和第二互连电介质层的多个导管，以及在多个导管中沉积铜以形成铜互连结构的铜互连层。 此外，相邻导管之间的第一互连电介质层包含空腔，使得第一互连电介质层的介电常数降低。 第二互连电介质层密封空腔的顶部，衬底是空腔的底部，并且空腔的顶部的宽度小于腔的底部的宽度。
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