- 专利标题: MEMS microphone structure and method of manufacturing the same
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申请号: US14889433申请日: 2013-12-10
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公开(公告)号: US09681234B2公开(公告)日: 2017-06-13
- 发明人: Chao Yuan , Xiaoxu Kang , Qingyun Zuo
- 申请人: SHANGHAI IC R&D CENTER CO.,LTD.
- 申请人地址: CN Shanghai
- 专利权人: SHANGHAI IC R&D CENTER CO., LTD
- 当前专利权人: SHANGHAI IC R&D CENTER CO., LTD
- 当前专利权人地址: CN Shanghai
- 代理机构: Tianchen LLC.
- 优先权: CN201310167692 20130509
- 国际申请: PCT/CN2013/088922 WO 20131210
- 国际公布: WO2014/180131 WO 20141113
- 主分类号: H04R25/00
- IPC分类号: H04R25/00 ; H04R19/04 ; H04R19/00 ; H04R31/00 ; B81C1/00 ; H04S7/00
摘要:
A MEMS microphone structure, comprising a semiconductor substrate having a cavity, a first dielectric layer having a through-hole communicating with the cavity, a lower diaphragm electrode formed above the through-hole and at least partially attached to the upper surface of the first dielectric layer, and an upper electrode structure with an insulating layer. The upper electrode structure comprises an annular supporter, a back plate having multiple holes, and an upper electrode connection. At least a part of the annular supporter extends downwardly to the lower diaphragm electrode while the rest of the annular supporter extends downwardly to the substrate. The back plate is suspended above the lower diaphragm electrode by the annular supporter, forming an air gap therebetween. An upper electrode is embedded in the insulating layer at the back plate and is lead out by the upper electrode connection.
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