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公开(公告)号：US20220262833A1
公开(公告)日：2022-08-18
申请号：US17665536
申请日：2022-02-06
申请人： Shanghai IC R&D Center Co., Ltd. , Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd.
发明人： Xiaoxu Kang
IPC分类号： H01L27/146
摘要： The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.
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公开(公告)号：US10816406B2
公开(公告)日：2020-10-27
申请号：US16311060
申请日：2016-09-08
发明人： Xiaoxu Kang
IPC分类号： G01J5/38 , H01L41/29 , H01L41/312 , H01L41/113 , H01L41/047
摘要： The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.
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公开(公告)号：US20190177158A1
公开(公告)日：2019-06-13
申请号：US16310821
申请日：2016-09-08
发明人： Xiaoxu Kang
摘要： The present invention provides an infrared detector pixel structure and manufacturing method thereof. The structure comprises a conductive metal region on surface of the silicon substrate; an infrared detecting element located above the silicon substrate for detecting infrared light and generating electrical signal; and a conductive beam unit electrically connected to the infrared detecting element for transmitting the electrical signal to the conductive metal region; the conductive beam unit includes at least one conductive beam layer and multilayer conductive trench arranged in a vertical direction; two ends of the conductive beam are respectively in contact with two layers of conductive trenches whose bottom portions are not in the same horizontal plane; the infrared detecting element is in contact with one conductive trench one conductive beam; the conductive metal region is in contact with bottom portion of the other layer of conductive trench therein; the electrical signal is transmitted along the height direction of the conductive trench and the conductive beam, so as to be transmitted downward to the conductive metal region in a circuitous path in the vertical direction.
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公开(公告)号：US20160112807A1
公开(公告)日：2016-04-21
申请号：US14889433
申请日：2013-12-10
发明人： Chao Yuan , Xiaoxu Kang , Qingyn Zuo
CPC分类号： H04R19/04 , B81B2201/0257 , B81C1/00571 , H04R19/005 , H04R31/003 , H04S7/00 , H04S2420/01
摘要： A MEMS microphone structure, comprising a semiconductor substrate having a cavity, a first dielectric layer having a through-hole communicating with the cavity, a lower diaphragm electrode formed above the through-hole and at least partially attached to the upper surface of the first dielectric layer, and an upper electrode structure with an insulating layer. The upper electrode structure comprises an annular supporter, a back plate having multiple holes, and an upper electrode connection. At least a part of the annular supporter extends downwardly to the lower diaphragm electrode while the rest of the annular supporter extends downwardly to the substrate. The back plate is suspended above the lower diaphragm electrode by the annular supporter, forming an air gap therebetween. An upper electrode is embedded in the insulating layer at the back plate and is lead out by the upper electrode connection.
摘要翻译： 一种MEMS麦克风结构，包括具有空腔的半导体衬底，具有与空腔连通的通孔的第一电介质层，形成在通孔上方并且至少部分地附接到第一电介质的上表面的下隔膜电极 层和具有绝缘层的上电极结构。 上电极结构包括环形支撑件，具有多个孔的背板和上电极连接。 环形支撑件的至少一部分向下延伸到下隔膜电极，而环形支撑件的其余部分向下延伸到基板。 背板通过环形支撑件悬挂在下隔膜电极的上方，在它们之间形成气隙。 上电极嵌入在背板的绝缘层中，并由上电极连接引出。
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公开(公告)号：US11855107B2
公开(公告)日：2023-12-26
申请号：US17665536
申请日：2022-02-06
发明人： Xiaoxu Kang
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L27/14683
摘要： The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.
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公开(公告)号：US11769679B2
公开(公告)日：2023-09-26
申请号：US16966508
申请日：2018-08-29
发明人： Xiaolan Zhong , Xiaoxu Kang
IPC分类号： H01L21/67 , C23C16/455 , C23C16/458 , C23C16/505 , C23C16/52 , H01L21/02
CPC分类号： H01L21/67253 , C23C16/4584 , C23C16/45536 , C23C16/505 , C23C16/52 , H01L21/02274 , H01L21/67017
摘要： The present disclosure relates to an apparatus and a method for improving film thickness uniformity, wherein a PECVD machine with twin chambers comprise a wafer heating platform, which is set to be a rotating platform with programmable speed control, by setting rotating speed of the platform, wafer is rotated for integral rounds within process time, so that a RF overlap between the twin chambers make consistent influence on edge regions of the wafer, and film around the wafer is evenly distributed, which not only eliminate abrupt change of film thickness caused by the RF overlap, but also reduce film thickness differences between edge regions and central regions of the film by a characteristic that the RF overlap improves film deposition rate, so as to ensure the film thickness more evenly in the range of the whole wafer.
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公开(公告)号：US09913040B2
公开(公告)日：2018-03-06
申请号：US15033113
申请日：2014-09-26
发明人： Yuhang Zhao , Yong Wang , Xiaoxu Kang , Yan Chen
CPC分类号： H04R7/20 , H04R7/08 , H04R19/005 , H04R19/04 , H04R31/00 , H04R31/003 , H04R31/006 , H04R2201/003 , H04R2231/003 , H04R2410/03
摘要： A capacitive silicon microphone comprises: a first dielectric layer sets on a substrate with a back cavity, a lower polar plate which is located over the back cavity, a first elastic member of which an inner edge is connected with the edge of the lower polar plate and an outer edge is located on the upper surface of the first dielectric layer, a second dielectric layer which is located on the outer edge of the first elastic member and right above the first dielectric layer, an upper polar plate which has a plurality of release holes and is formed above the lower polar plate with an air gap in between, a second elastic member of which an inner edge is connected with the edge of the upper polar plate and an outer edge is located on the upper surface of the second dielectric layer.
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8.发明申请公开(公告)号：US20150295002A1
公开(公告)日：2015-10-15
申请号：US14439229
申请日：2012-12-28
发明人： Xiaoxu Kang , Yuhang Zhao
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： A pixel structure of a CMOS image sensor pixel structure and a manufacturing method thereof. The structure comprises a photosensitive element (37) and a multi-layer structure of a standard CMOS device arranged on the silicon substrate (31). A deep groove (38) having a light-transmitting space therein is formed above the photosensitive element, a side wall of the deep groove is surrounded by a light reflection shielding layer (39) continuously arranged in a longitudinal direction to reflect the light incident on the light reflection shielding layer. The side wall of the deep groove is surrounded by metal interconnects, vias, contact holes and polysilicon in annular configurations, thus the incident light on the deep grove is substantially completely reflected, which avoids the optical crosstalk and effectively improves the optical resolution and sensitivity of the pixel and the performance and reliability of the chip.
摘要翻译： CMOS图像传感器像素结构的像素结构及其制造方法。 该结构包括光敏元件（37）和布置在硅衬底（31）上的标准CMOS器件的多层结构。 在感光元件的上方形成有具有透光空间的深槽（38），深槽的侧壁由沿纵向方向连续排列的光反射屏蔽层（39）包围，以反射入射到 光反射屏蔽层。 深槽的侧壁由金属互连，通孔，接触孔和环状构造的多晶硅围绕，因此深沟槽中的入射光基本上完全反射，从而避免了光学串扰，并有效提高了光学分辨率和灵敏度 像素和芯片的性能和可靠性。
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公开(公告)号：US12002708B2
公开(公告)日：2024-06-04
申请号：US17613491
申请日：2019-12-04
申请人： SHANGHAI IC R&D CENTER CO., LTD. , Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd
发明人： Xiaoxu Kang , Ruoxi Shen , Xiaolan Zhong
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L21/76289 , H01L29/0649
摘要： The present invention discloses a method for forming an intermetallic air gap, which comprises following steps: S01: forming a trench in a solid dielectric; S02: preparing an insulating sheet-like two-dimensional material, wherein the insulating sheet-like two-dimensional material comprises an insulating nano sheet-like layer, the size of the insulating nano sheet-like layer in the sheet-like two-dimensional direction is greater than the size of the trench; S03: the insulating sheet-like two-dimensional material is deposited on the solid dielectric and the trench; S04: annealing the solid dielectric and the insulating sheet-like two-dimensional material to form a stable thin film composed of insulating sheet-like two-dimensional material on the trench. The method for forming an intermetallic air gap provided by the present disclosure can effectively increase the intermetallic air gap formation ratio, and greatly reduce the effective dielectric constant and interconnection delay, further reduce costs, and improve product performance.
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公开(公告)号：US11378459B2
公开(公告)日：2022-07-05
申请号：US16961955
申请日：2018-08-29
发明人： Xiaoxu Kang
IPC分类号： G01J5/02 , G01J5/08 , G01J5/38 , H01H1/00 , H01H37/00 , H01L31/024 , H01L31/101 , B81B3/00 , H01H37/72
摘要： The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.
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