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162 条记录 (耗时 0.039 秒)

    Comparison circuit, and analog-to-digital converter and image sensor including the same
    91.
    发明授权
    Comparison circuit, and analog-to-digital converter and image sensor including the same 有权

    公开(公告)号：US12096149B2

    公开(公告)日：2024-09-17

    申请号：US18150619

    申请日：2023-01-05

    申请人： Samsung Electronics Co., Ltd.

    发明人： Keunyeol Park ,  Sooyoun Kim

    IPC分类号： H04N25/772 ,  H04N25/709

    CPC分类号： H04N25/772 ,  H04N25/709

    摘要： Disclosed is an analog-to-digital converter including a comparison circuit and a counter circuit. The comparison circuit outputs a comparison result signal based on a pixel signal and a ramp signal and outputs a zero-crossing prediction signal, is the comparison circuit being configured to transition the zero-crossing prediction signal before a zero-crossing time point at which a voltage level of the pixel signal becomes identical to a voltage level of the ramp signal and during a time interval during which the voltage level of the ramp signal is reduced. The counter circuit outputs a low-order bit digital code based on the zero-crossing prediction signal and stops the output of the low-order bit digital code based on the comparison result signal.

    Memory system including memory device and memory controller, and operating method thereof
    92.
    发明授权
    Memory system including memory device and memory controller, and operating method thereof 有权

    公开(公告)号：US12079491B2

    公开(公告)日：2024-09-03

    申请号：US18150626

    申请日：2023-01-05

    申请人： Samsung Electronics Co., Ltd.

    发明人： Taewoo Han ,  Wooil Kim ,  Taehun Kim

    IPC分类号： G06F3/06

    CPC分类号： G06F3/0625 ,  G06F3/0644 ,  G06F3/0659 ,  G06F3/0673

    摘要： A memory system includes a memory device including a memory cell array divided into a plurality of memory banks, and a memory controller that sends read requests or write requests to the memory device for the purpose of inputting data to or outputting data from the memory banks of the memory cell array, respectively, and sends the read requests so as to be separated from the write requests based on a read-write switching point. In a first turn, the memory controller sets a near switching point before the read-write switching point. The memory controller blocks scheduling at least one of first bank requests, between the near switching point and the read-write switching point. The memory controller schedules at least one of second bank requests, which cause state switching of the memory banks, so as to be issued between the near switching point and the read-write switching point.

    Sol-gel chip using porous substrate for entrapping small molecules and screening method of small molecules specific material using thereof
    98.
    发明授权
    Sol-gel chip using porous substrate for entrapping small molecules and screening method of small molecules specific material using thereof 有权

    公开(公告)号：US10378054B2

    公开(公告)日：2019-08-13

    申请号：US13751074

    申请日：2013-01-26

    申请人： Dongguk University Industry-Academic Cooperation Foundation

    发明人： So Youn Kim ,  Ji Young Ahn

    IPC分类号： C12Q1/68 ,  C12Q1/6876 ,  G01N33/543

    摘要： There is provided a sol-gel chip using a porous substrate for entrapping small molecules and a method for screening a small molecule-specific material using the same, and more particularly, a porous substrate sol-gel chip characterized in that a sol-gel composition for entrapping small molecules is spotted on a surface of the porous substrate, a method for manufacturing the porous substrate sol-gel chip for entrapping small molecules, and a method for screening a material specifically binding to the small molecules using the porous substrate sol-gel chip for entrapping small molecules. According to the present invention, the small molecules can be effectively entrapped in the chip and the inflow of aptamers can be maintained as compared with the existing methods and thus aptamers specific to an extensive range of small molecules can be more easily selected.