Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same
    95.
    发明授权
    Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same 有权
    用于抛光相变存储器件的化学机械抛光浆料组合物和使用其的相变存储器件的抛光方法

    公开(公告)号:US08586464B2

    公开(公告)日:2013-11-19

    申请号:US12540661

    申请日:2009-08-13

    IPC分类号: H01L21/4763 H01L21/00

    摘要: A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

    摘要翻译: 提供了一种用于相变存储器件的化学机械抛光(CMP)的浆料组合物。 浆料组合物包含去离子水和铁或铁化合物。 浆料组合物可以在相变存储器件上实现高抛光速率并且改善相变记忆材料和抛光停止层(例如,氧化硅膜)之间的抛光选择性,可以最小化处理缺陷的发生(例如, 凹陷和侵蚀),并且可以降低相变记忆材料上的蚀刻速率,以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。