公开(公告)号：US5766379A

公开(公告)日：1998-06-16

申请号：US478491

申请日：1995-06-07

申请人： William A. Lanford ,  Wei Wang ,  Peijun Ding

发明人： William A. Lanford ,  Wei Wang ,  Peijun Ding

IPC分类号： C23C14/02 ,  C23C14/16 ,  C23C14/58 ,  H01L21/768 ,  H01L23/532 ,  C22F38/06 ,  C22F38/16

CPC分类号： C23C14/5806 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5853 ,  H01L21/76834 ,  H01L21/76886 ,  H01L23/53233 ,  H01L23/53238 ,  H01L21/76807 ,  H01L2924/0002

摘要： A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.

摘要翻译： 形成铜导体作为微电子器件中的组件。 通过在微电子基板的表面上形成金属层，在金属层上形成铜层，退火金属层和铜层，形成导体。 退火步骤通过铜层将至少一些金属层扩散到其表面，其中扩散金属在铜层的表面形成保护性金属氧化物。 结果，金属氧化物层钝化铜层。

公开(公告)号：US10287686B2

公开(公告)日：2019-05-14

申请号：US13992165

申请日：2011-11-23

申请人： Mengxin Zhao ,  Xu Liu ,  Peijun Ding ,  Hougong Wang ,  Wei Xia ,  Lihui Wen

发明人： Mengxin Zhao ,  Xu Liu ,  Peijun Ding ,  Hougong Wang ,  Wei Xia ,  Lihui Wen

IPC分类号： C23C16/44 ,  C23C16/46 ,  H01L21/67 ,  C23C14/02

摘要： The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.

公开(公告)号：US08454804B2

公开(公告)日：2013-06-04

申请号：US11262193

申请日：2005-10-28

申请人： Mengqi Ye ,  Zhendong Liu ,  Peijun Ding

发明人： Mengqi Ye ,  Zhendong Liu ,  Peijun Ding

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  C23C14/225 ,  C23C14/505 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3455

摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

公开(公告)号：US07569125B2

公开(公告)日：2009-08-04

申请号：US11124524

申请日：2005-05-05

申请人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

发明人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

IPC分类号： C23C14/35

CPC分类号： H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

摘要： A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.

摘要翻译： 可用于等离子体溅射反应器的一体式内屏蔽件，并且从目标件延伸到具有光滑内表面的基座并由屏蔽件的中间部分中的环形凸缘支撑。 屏蔽可用于支持用于激发等离子体的RF线圈。 外屏蔽件包括在其与内屏蔽凸缘对准的端部上的向外延伸的凸缘，对应于用于RF线圈的支架的内屏蔽件中的凹部的孔和周向布置的气体流动孔。

公开(公告)号：US07169271B2

公开(公告)日：2007-01-30

申请号：US10862257

申请日：2004-06-07

申请人： Ilyoung Richard Hong ,  James Tsung ,  Daniel Clarence Lubben ,  Peijun Ding ,  Nirmalya Maity

发明人： Ilyoung Richard Hong ,  James Tsung ,  Daniel Clarence Lubben ,  Peijun Ding ,  Nirmalya Maity

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/345 ,  C23C14/35 ,  C23C14/355 ,  H01J37/3405 ,  H01J37/3408

摘要： A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.

摘要翻译： 小型磁体组件在逆行星行星或行星路径周围围绕目标物的背面进行扫描，等离子体溅射包括围绕靶的中心轴线的轨道旋转和围绕目标中心轴线旋转的另一轴线的行星旋转。 磁铁组件通过目标中心，从而允许全目标覆盖。 相对于相应轴的两个旋转的适当选择的比率在目标周边附近产生比在目标中心附近更慢的磁体速度。 齿轮行星机构包括旋转驱动板，固定中心齿轮和惰轮以及可驱动地支撑在驱动平面上的悬臂磁体组件的驱动平面中的从动齿轮。 带式行星机构包括固定中心绞盘，支撑磁体组件的从动轮和缠绕在其上的带。

公开(公告)号：US07041201B2

公开(公告)日：2006-05-09

申请号：US10608306

申请日：2003-06-26

申请人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

发明人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

IPC分类号： C23C14/35

CPC分类号： H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.

摘要翻译： 本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。 因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。 当线圈由与主要靶材相同的材料制成时，磁场也用作磁控管，作为次级靶。 本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。 屏蔽可用于支持RF线圈。

公开(公告)号：US06960284B2

公开(公告)日：2005-11-01

申请号：US10755644

申请日：2004-01-12

申请人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

发明人： Jianming Fu ,  Peijun Ding ,  Zheng Xu

IPC分类号： H05H1/46 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/3447 ,  C23C14/3457 ,  C23C14/35 ,  H01J37/3408

摘要： A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The self-sustained sputtering (SSS), which is particularly applicable to copper sputtering, is enabled by several means. The density of the plasma in the region of the magnet assembly of the magnetron is intensified for a fixed target power by reducing the size of the magnets. To provide more uniform sputtering, the small magnetron is scanned in one or two dimensions over the back of the target, possibly a combination of rotation about the center and radial oscillation. Additionally, the substrate can then be biased to more effectively control the energy and directionality of the flux of sputtered particles incident on the wafer.

摘要翻译： 用于物理气相沉积（PVD）的等离子体反应器，也称为溅射，其适于使得从目标溅射的原子物质能够自动维持等离子体而不需要诸如氩的工作气体。 特别适用于铜溅射的自持溅射（SSS）可以通过几种方式实现。 通过减小磁体的尺寸，磁控管的磁体组件的区域中的等离子体的密度增强了固定的目标功率。 为了提供更均匀的溅射，小磁控管在一个或两个维度上扫描在目标的背面，可能是围绕中心和径向振荡的旋转的组合。 此外，然后可以将衬底偏置以更有效地控制入射在晶片上的溅射粒子的能量和方向性。

公开(公告)号：US20050199491A1

公开(公告)日：2005-09-15

申请号：US11124524

申请日：2005-05-05

申请人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith Miller ,  Ilya Lavitsky

发明人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith Miller ,  Ilya Lavitsky

IPC分类号： H05H1/46 ,  C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

摘要： A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.

摘要翻译： 可用于等离子体溅射反应器的一体式内屏蔽件，并且从目标件延伸到具有光滑内表面的基座并由屏蔽件的中间部分中的环形凸缘支撑。 屏蔽可用于支持用于激发等离子体的RF线圈。 外屏蔽件包括在其与内屏蔽凸缘对准的端部上的向外延伸的凸缘，对应于用于RF线圈的支架的内屏蔽件中的凹部的孔和周向布置的气体流动孔。

公开(公告)号：US20050133361A1

公开(公告)日：2005-06-23

申请号：US10942358

申请日：2004-09-16

申请人： Peijun Ding ,  Daniel Lubben ,  Ilyoung Hong ,  Michael Miller ,  Hsien-Lung Yang ,  Suraj Rengarajan ,  Arvind Sundarrajan ,  Goichi Yoshidome

发明人： Peijun Ding ,  Daniel Lubben ,  Ilyoung Hong ,  Michael Miller ,  Hsien-Lung Yang ,  Suraj Rengarajan ,  Arvind Sundarrajan ,  Goichi Yoshidome

IPC分类号： C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3455

摘要： A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

摘要翻译： 用于等离子体溅射反应器中的磁控管的升降机构和相应的使用。 围绕目标轴旋转的磁控管被可控地从目标的背面提升，以补偿溅射侵蚀，从而在溅射表面保持恒定的磁场和合成的等离子体密度，这对于使用小的磁控管的稳定操作特别重要， 例如，一个执行关于目标轴的圆形或行星运动。 升降机构可以包括轴向固定到磁控管支撑轴的导螺杆和与其接合的导螺母，以在导螺母转动时升高磁控管。 或者，支撑轴轴向固定到垂直移动的滑块。 可以根据基于施加到目标的累积功率的配方或通过监视目标的电气特性来控制升力量。

公开(公告)号：US06881673B2

公开(公告)日：2005-04-19

申请号：US10421174

申请日：2003-04-22

申请人： Peijun Ding ,  Imran Hashim ,  Barry Chin ,  Bingxi Sun

发明人： Peijun Ding ,  Imran Hashim ,  Barry Chin ,  Bingxi Sun

IPC分类号： C23C14/06 ,  C23C14/16 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76876 ,  C23C14/0641 ,  C23C14/165 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882

摘要： A method and apparatus for metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned substrate followed by seed layer formed using high density plasma PVD techniques. The structure is then filled using either 1) electroplating, 2) PVD reflow, 3) CVD followed by PVD reflow, or 4) CVD.

摘要翻译： 提供用于金属化处理序列的方法和装置，用于形成包括线，通孔和触点的可靠的互连。 首先在图案化衬底上形成初始阻挡层，例如Ta或TaN，接着使用高密度等离子体PVD技术形成晶种层。 然后使用1）电镀，2）PVD回流，3）CVD，然后PVD回流或4）CVD来填充该结构。