公开(公告)号：US11237482B2

公开(公告)日：2022-02-01

申请号：US16195945

申请日：2018-11-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chao-Chen Chang ,  Shao-Wei Luo ,  Jen-Yang Chung ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20 ,  H05G2/00

Abstract: A device is disclosed that includes a master controller, a process chamber, a local controller, a switch, and a data storage. The process chamber is configured to generate a data according to a EUV light generation process. The local controller is coupled to the master controller and configured to control the process chamber. The switch is coupled between the master controller and the local controller, wherein the switch is configured to provide paths for the local controller to communicate with the master controller. The data storage directly connected to the local controller and configured to store the data. The local controller communicates directly with the data storage.

公开(公告)号：US11224115B2

公开(公告)日：2022-01-11

申请号：US17098081

申请日：2020-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia Hsu ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng ,  Tzung-Chi Fu ,  Bo-Tsun Liu

IPC: H05G2/00

Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.

公开(公告)号：US11221562B2

公开(公告)日：2022-01-11

申请号：US16354015

申请日：2019-03-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu Lee ,  Tao-Hsin Chen ,  Ching-Juinn Huang ,  Po-Chung Cheng

IPC: G03F7/20 ,  H01L21/683 ,  H01L21/68 ,  G03F1/68

Abstract: In some embodiments, a reticle structure is provided. The reticle structure includes a reticle stage and a reticle mounted on the reticle stage. The reticle stage includes plural first burls and plural second burls, in which the second burls are disposed on a center of the reticle stage and the first burls disposed on an edge of the reticle stage such that the first burls surround the second burls. The reticle includes a base material and a pattern layer overlying the base material. The base material is secured on the first and second burls of the reticle stage. The pattern layer includes plural first gratings, and each of the first burls is vertically aligned with one of the first gratings.

公开(公告)号：US11153959B2

公开(公告)日：2021-10-19

申请号：US16535005

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chia Hsu ,  Po-Chung Cheng ,  Li-Jui Chen ,  Shang-Chieh Chien ,  Yen-Shuo Su ,  Chieh Hsieh ,  Chi Yang

IPC: H05G2/00 ,  G02B7/182

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.

公开(公告)号：US11153958B2

公开(公告)日：2021-10-19

申请号：US17020335

申请日：2020-09-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hsun Tsai ,  Han-Lung Chang ,  Yen-Hsun Chen ,  Shao-Hua Wang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/20

Abstract: An extreme ultraviolet (EUV) lithography method includes causing a first metallic droplet to move along a shroud and through an aperture of the shroud at a first velocity, and adjusting an open area of the aperture of the shroud. After adjusting the open area of the aperture of the shroud, a second metallic droplet is caused to move along the shroud and through the aperture of the shroud at a second velocity, in which the second velocity is different from the first velocity.

公开(公告)号：US11086209B2

公开(公告)日：2021-08-10

申请号：US15798937

申请日：2017-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Tsung Shih ,  Shih-Chang Shih ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F1/24 ,  G03F1/80 ,  G03F1/54 ,  G03F1/52

Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.

公开(公告)号：US11024623B2

公开(公告)日：2021-06-01

申请号：US16933127

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Wen Cho ,  Fu-Jye Liang ,  Chun-Kuang Chen ,  Chih-Tsung Shih ,  Li-Jui Chen ,  Po-Chung Cheng ,  Chin-Hsiang Lin

IPC: H01L27/02 ,  G03F1/36 ,  G06F30/30 ,  G06F30/39 ,  G06F30/20 ,  G06F119/18

Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer are calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the second portion equals a penumbra size of the exposure manufacturing process, and the penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout. The patterned layer includes a plurality of absorbers, and a first width of the absorbers is the first portion is less than a second width of the absorbers in the second portion the second portion.

公开(公告)号：US11013097B2

公开(公告)日：2021-05-18

申请号：US15906787

申请日：2018-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chih Lai ,  Han-Lung Chang ,  Chi Yang ,  Shang-Chieh Chien ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

公开(公告)号：US10990026B2

公开(公告)日：2021-04-27

申请号：US16181111

申请日：2018-11-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20

Abstract: A method for cleaning a lithography apparatus is provided. The method includes flowing a major cleaning agent in volume over a reflective surface of a collector of the lithography apparatus; and flowing a minor cleaning agent in volume intermittently over the reflective surface of the collector, so as to clean the reflective surface of the collector.

公开(公告)号：US10969690B2

公开(公告)日：2021-04-06

申请号：US16029408

申请日：2018-07-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jen-Yang Chung ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/20 ,  G03F1/24

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.