公开(公告)号：US20070163942A1

公开(公告)日：2007-07-19

申请号：US11513645

申请日：2006-08-31

Applicant: Yuji Tanaka ,  Naoki Oka ,  Ichirou Kumo ,  Katsumi Yokogawa ,  Hiromitsu Kanamori ,  Kenji Sakai

Inventor： Yuji Tanaka ,  Naoki Oka ,  Ichirou Kumo ,  Katsumi Yokogawa ,  Hiromitsu Kanamori ,  Kenji Sakai

IPC: B01D63/02

CPC classification number: B01D63/02 ,  B01D63/043 ,  B01D2313/08 ,  B01D2313/20 ,  B01D2313/26 ,  B01D2315/04 ,  B01D2315/06 ,  B01D2321/185 ,  C02F1/444

Abstract: A hollow fiber membrane module comprising a large number of hollow fiber membranes contained in a cylindrical case, wherein one end of each hollow fiber membrane, which is left open, is fixed to the cylindrical case, while the other ends of the hollow fiber membranes are divided into more than one small bundles, with the ends, contained in separate small bundles, being kept together and plugged.

Abstract translation: 一种中空纤维膜组件，包括容纳在圆筒形壳体中的大量中空纤维膜，其中敞开的中空纤维膜的一端固定在圆筒形壳体上，而中空纤维膜的另一端为 分为多个小束，其端部包含在分开的小束中，并保持在一起并堵塞。

公开(公告)号：US07189684B2

公开(公告)日：2007-03-13

申请号：US10476717

申请日：2003-03-04

Applicant: Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Kazusei Tamai ,  Katsuyoshi Ina

Inventor： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Kazusei Tamai ,  Katsuyoshi Ina

IPC: C09K13/00

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463

Abstract: A polishing composition capable of satisfactorily polishing a semiconductor. The first polishing composition of the present invention includes silicon dioxide, at least one component selected from periodic acids and salts thereof, at least one component selected from tetraalkyl ammonium hydroxides and tetraalkyl ammonium chlorides, hydrochloric acid, and water, and contains substantially no iron. The second polishing composition of the present invention includes a predetermined amount of fumed silica, a predetermined amount of at least one component selected from periodic acids and salts thereof, a tetraalkyl ammonium salt represented by the following general formula (1), at least one component selected from ethylene glycol and propylene glycol, and water. The pH of the second polishing composition is greater than or equal to 1.8 and is less than 4.0.

Abstract translation: 能够令人满意地研磨半导体的抛光组合物。 本发明的第一种抛光组合物包括二氧化硅，选自周期酸及其盐中的至少一种组分，至少一种选自四烷基氢氧化铵和四烷基氯化铵的组分，盐酸和水，并且基本上不含铁。 本发明的第二抛光组合物包含预定量的热解法二氧化硅，预定量的选自周期酸及其盐中的至少一种组分，由以下通式（1）表示的四烷基铵盐，至少一种组分 选自乙二醇和丙二醇，和水。 第二抛光组合物的pH值大于或等于1.8，小于4.0。

公开(公告)号：US20060134908A1

公开(公告)日：2006-06-22

申请号：US11266967

申请日：2005-11-04

Applicant: Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Katsunobu Hori ,  Kenji Sakai

Inventor： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Katsunobu Hori ,  Kenji Sakai

IPC: H01L21/4763

CPC classification number: H01L21/7684 ,  H01L21/02074 ,  H01L21/3212

Abstract: A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent. Thus, the wiring of the semiconductor device is reliably formed.

Abstract translation: 用于研磨物体以形成用于半导体器件的布线的方法包括：通过化学和机械抛光去除导体层的外部的一部分以暴露阻挡层的上表面; 以及通过化学和机械抛光去除导体层的外部部分的剩余部分和阻挡层的外部部分，以露出绝缘体层的上表面。 当去除导体层的外部的一部分时，使用包含成膜剂的第一抛光组合物对物体的上表面进行化学和机械抛光。 随后，洗涤物体的上表面以通过第一抛光组合物中的成膜剂除去在导体层的上表面上形成的保护膜。 此后，使用含有成膜剂的第二抛光组合物再次对物体的上表面进行化学和机械抛光。 因此，可靠地形成半导体器件的布线。

公开(公告)号：US20050208761A1

公开(公告)日：2005-09-22

申请号：US11085835

申请日：2005-03-21

Applicant: Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

Inventor： Junhui Oh ,  Atsunori Kawamura ,  Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Kenji Sakai ,  Katsunobu Hori

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  C23F3/06 ,  H01L21/00 ,  H01L21/304 ,  H01L21/321 ,  H01L21/4763

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C23F3/06

Abstract: A polishing composition contains a surface irregularity-inhibitor, silicon dioxide, an acid, an oxidant, and water. The surface irregularity-inhibitor is at least one selected from, for example, stored polysaccharides and extracellular polysaccharides. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is at least one selected from, for example, nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid, and malonic acid. The oxidant is, for example, hydrogen peroxide, persulfate, periodate, perchlorate, nitrate salt, or an oxidative metallic salt. The polishing composition can be suitably used in polishing for forming wiring in a semiconductor device.

Abstract translation: 抛光组合物含有表面不规则抑制剂，二氧化硅，酸，氧化剂和水。 表面不规则抑制剂是选自例如储存的多糖和细胞外多糖中的至少一种。 二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。 酸是选自例如硝酸，盐酸，硫酸，乳酸，乙酸，草酸，柠檬酸，苹果酸，琥珀酸，丁酸和丙二酸中的至少一种。 氧化剂是例如过氧化氢，过硫酸盐，高碘酸盐，高氯酸盐，硝酸盐或氧化性金属盐。 抛光组合物可以适用于在半导体器件中形成布线的抛光。

公开(公告)号：US20050108949A1

公开(公告)日：2005-05-26

申请号：US10952672

申请日：2004-09-29

Applicant: Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Junhui Oh ,  Atsunori Kawamura ,  Kenji Sakai

Inventor： Tsuyoshi Matsuda ,  Tatsuhiko Hirano ,  Junhui Oh ,  Atsunori Kawamura ,  Kenji Sakai

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768 ,  B24D3/02

CPC classification number: H01L21/7684 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

Abstract: A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water This polishing composition is capable of suppressing the occurrence of the dishing.

Abstract translation: 本发明的抛光组合物，用于在半导体器件中形成布线的抛光中，包括：特定的表面活性剂; 氧化硅; 选自羧酸和α-氨基酸的至少一种; 腐蚀抑制剂; 氧化剂 和水这种抛光组合物能够抑制凹陷的发生。

公开(公告)号：US06849099B2

公开(公告)日：2005-02-01

申请号：US10674318

申请日：2003-09-30

Applicant: Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Katsuyoshi Ina

Inventor： Koji Ohno ,  Chiyo Horikawa ,  Kenji Sakai ,  Katsuyoshi Ina

IPC: B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  C09G1/04

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

Abstract: There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.

Abstract translation: 提供了减少腐蚀并用于半导体器件制造工艺的最终抛光步骤中的抛光组合物。 抛光组合物含有胶体二氧化硅，高碘酸化合物，氨，硝酸铵和水，其pH为1.8〜4.0。

公开(公告)号：US06797626B2

公开(公告)日：2004-09-28

申请号：US10331070

申请日：2002-12-27

Applicant: Noriko Miyairi ,  Yasuo Inada ,  Tsuyoshi Hasegawa ,  Yuji Terashima ,  Kenji Sakai ,  Tadahiro Kitamura ,  Takahiro Umeda

Inventor： Noriko Miyairi ,  Yasuo Inada ,  Tsuyoshi Hasegawa ,  Yuji Terashima ,  Kenji Sakai ,  Tadahiro Kitamura ,  Takahiro Umeda

IPC: H01L21302

CPC classification number: B24B37/30 ,  C09G1/02 ,  H01L21/3212 ,  H05K3/26 ,  H05K3/383 ,  H05K3/4644 ,  H05K2203/025 ,  H05K2203/121

Abstract: The method of polishing a copper layer of a substrate is capable of improving a stock removal rate, etc. The method comprises the steps of: supplying a substrate onto an polishing pad of an polishing plate with a copper layer facing the polishing pad; pressing the substrate onto the polishing pad, with a backing pad, by a press head; relatively rotating the press head with respect to the polishing plate, with supplying polishing slurry onto the polishing pad. The backing pad is made of a material whose Asker C hardness is 75-95 and whose compressibility is 10% or less. The polishing slurry includes a chelating agent for chelating copper, an etching agent for etching the surface of copper layer, an oxidizing agent for oxidizing the surface of copper layer, and water.

Abstract translation: 抛光基板的铜层的方法能够提高原料去除率等。该方法包括以下步骤：将基板供给到具有面向抛光垫的铜层的抛光板的抛光垫上; 用衬垫将衬底用衬垫压入抛光垫上; 相对于抛光板相对地旋转压头，同时将抛光浆料供应到抛光垫上。 衬垫由Asker C硬度为75-95且压缩率为10％以下的材料制成。 抛光浆料包括用于螯合铜的螯合剂，用于蚀刻铜层表面的蚀刻剂，用于氧化铜层表面的氧化剂和水。

公开(公告)号：US06475635B1

公开(公告)日：2002-11-05

申请号：US09734572

申请日：2000-12-13

Applicant: Kenji Sakai ,  Naohisa Kawakami ,  Satoru Kurimoto ,  Takashi Inaba ,  Koichi Yamamoto ,  Takayuki Shibayama

Inventor： Kenji Sakai ,  Naohisa Kawakami ,  Satoru Kurimoto ,  Takashi Inaba ,  Koichi Yamamoto ,  Takayuki Shibayama

IPC: B32B1520

CPC classification number: F16C33/24 ,  B22F1/0003 ,  B22F2998/00 ,  B22F2998/10 ,  C22C1/0425 ,  F16C33/121 ,  F16C2204/12 ,  Y10T428/12063 ,  Y10T428/12097 ,  Y10T428/12118 ,  Y10T428/1291 ,  B22F7/02 ,  B22F3/10

Abstract: A copper alloy sliding material which can bring about superior resistance to fatigue as well as good anti-seizure property without containing any Pb. The copper alloy sliding material is made to have the structure in which both of the hard copper alloy phase and the soft copper alloy phase coexist in a mixture state. On the surface of the sliding material, the soft copper alloy phase comes to have a shape more concave than that of the hard copper alloy phase when receiving a load or when being in a sliding wear relation, in which concave portions is retained lubricant with the result that the anti-seizure property is enhanced. Further, since the soft phase and the hard phase are made of the same copper alloy, the wettability thereof becomes good, and Ni and etc. contained in the hard copper alloy phase are diffused into the soft copper alloy phase, so that the hardness of the boundary portion defined between the phases come to be gradually varied. Thus, because of the unclear boundary, the load received in the hard phase comes to be spread in a wide range without being concentrated at the boundary, so that the fatigue strength is enhanced.

Abstract translation: 一种铜合金滑动材料，可以带来优异的抗疲劳性以及良好的抗咬合性能，不含任何Pb。 使铜合金滑动材料具有混合状态下硬铜合金相和软铜合金相共存的结构。 在滑动材料的表面上，软铜合金相的形状比硬铜合金相的形状比承受载荷或滑动磨损关系时更凹形，其中凹部保持有润滑剂 导致抗发作性能得到提高。 此外，由于软相和硬相由相同的铜合金制成，所以其润湿性良好，硬铜合金相中所含的Ni等扩散到软铜合金相中，使得硬度 两相之间界定的边界部分逐渐变化。 因此，由于边界不清楚，硬相中承受的载荷在宽范围内扩散而不会集中在边界处，从而提高了疲劳强度。

公开(公告)号：US06354914B1

公开(公告)日：2002-03-12

申请号：US09432268

申请日：1999-11-02

Applicant: Takao Inaba ,  Minoru Numoto ,  Kenji Sakai ,  Manabu Satoh

Inventor： Takao Inaba ,  Minoru Numoto ,  Kenji Sakai ,  Manabu Satoh

IPC: B24B4900

CPC classification number: B24B37/013 ,  B24B37/005 ,  B24B49/04 ,  B24B49/06

Abstract: Sensors detect a stock removal of a wafer during polishing, and a CPU calculates the stock removal in accordance with information from the sensors. The CPU compares the actual stock removal detected by the sensors and a model stock removal stored in RAM, and determines timings for dressing and replacing said polishing pad in accordance with a difference between the actual stock removal and the model stock removal. The determination results are shown on a display.

Abstract translation: 传感器在抛光期间检测到晶片的库存移除，并且CPU根据来自传感器的信息计算库存移除。 CPU比较传感器检测到的实际库存清除量和存储在RAM中的库存清单，并根据实际库存清除与库存清除之间的差异确定修整和更换抛光垫的时间。 确定结果显示在显示屏上。

公开(公告)号：US06346037B1

公开(公告)日：2002-02-12

申请号：US09509110

申请日：2000-03-20

Applicant: Takao Inaba ,  Minoru Numoto ,  Kenji Sakai

Inventor： Takao Inaba ,  Minoru Numoto ,  Kenji Sakai

IPC: B24B500

CPC classification number: H01L21/67219 ,  B24B37/345 ,  B24B41/005

Abstract: A CMP machine of the invention includes first and second polishing bases 14 and 15, first and second wafer holding heads 31 and 32, a wafer loading unit 41, a wafer unloading unit 42, first and second head rotating mechanism rotating the first and second wafer holding heads so as to position then above the first and second polishing bases, wafer loading unit, or wafer unloading unit, a first transportation mechanism transporting an unpolished wafer to the wafer loading unit, and a second transportation mechanism, transporting a polished wafer from the wafer unloading unit. The first and second polishing bases are located mutually adjacently, the wafer loading unit and wafer unloading unit are located mutually adjacently, the first polishing base and wafer loading unit are located diagonally, the second polishing base and wafer unloading unit are located diagonally. Owing to this structure, transportation of a wafer to the wafer loading unit and transportation of a wafer from the wafer unloading unit are achieved by the different transportation mechanisms. This leads to a minimized adhesion of dust to an unpolished wafer.

Abstract translation: 本发明的CMP机器包括第一和第二抛光基座14和15，第一和第二晶片保持头31和32，晶片装载单元41，晶片卸载单元42，第一和第二磁头旋转机构，其使第一和第二晶片 保持头以便位于第一和第二抛光基座，晶片加载单元或晶片卸载单元之上，将未抛光晶片传送到晶片加载单元的第一输送机构，以及第二输送机构，将抛光晶片从 晶片卸载单元。 第一和第二抛光基座相互相邻地设置，晶片加载单元和晶片卸载单元相互相邻地定位，第一抛光基底和晶片加载单元对角定位，第二抛光基底和晶片卸载单元对角定位。 由于这种结构，通过不同的输送机构实现晶片向晶片装载单元的输送和晶片从晶片卸载单元的输送。 这导致灰尘对未抛光晶片的附着力最小化。