摘要:
The present invention relates to a high-sensitivity inspection method and apparatus adapted for the fine-structuring of patterns, wherein defect inspection sensitivity is improved using the following technologies: detection optical system is improved in resolution by filling the clearance between an objective lens 30 and a sample 1, with a liquid, and increasing effective NA (Numerical Aperture); and when a transparent interlayer-insulating film is formed on the surface of the sample, amplitude splitting at the interface between the liquid and the insulating film is suppressed for reduction in the unevenness of optical images in brightness due to interference of thin-film, by immersing the clearance between the objective lens and the sample, with a liquid of a refractive index close to that of the transparent film.
摘要:
In a pattern inspection apparatus for comparing images of corresponding areas of two patterns, which are formed so as to be identical, so as to judge that a non-coincident part of the images is a defect, the influence of unevenness in brightness of patterns caused by a difference of thickness or the like is reduced, whereby highly sensitive pattern inspection is realized. In addition, high-speed pattern inspection can be carried out without changing the image comparison algorithm. For this purpose, the pattern inspection apparatus operates to perform comparison processing of images in parallel in plural areas. Further, the pattern inspection apparatus operates to convert gradation of an image signal among compared images using different plural processing units such that, even in the case in which a difference of brightness occurs in an identical pattern among images, a defect can be detected correctly.
摘要:
When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要:
A defect inspection apparatus includes a movable stage for mounting a substrate having circuit patterns as an object of inspection, an irradiation optical system which irradiates a slit-shaped light beam from an oblique direction to the circuit patterns of the substrate, a detection optical system which includes an image sensor for receiving reflected/scattered light from the substrate by irradiation of the slit-shaped light beam and converting the received light into a signal, and an image processor which processes the signal. The irradiation optical system includes a cylindrical lens and a coherency reduction optical system, which receives the light beam and emits a plurality of slit-shaped light sub-beams which are spatially reduced in coherency in a light-converging direction of the cylindrical lens. The cylindrical lens focuses the plurality of slit-shaped light sub-beams into the slit-shaped light beam irradiated to the surface of the substrate.
摘要:
A method of inspecting patterns to detect a defect of the patterns by using information of a scattered diagram of brightness of said first and second images.
摘要:
In a defect inspection apparatus for performing an inspection with an optical system, the dimension of a defect is measured substantially concurrently with detection of the defect. In order to promote the accuracy of measurement of the defect dimension, a collation unit is provided which collates the defect dimension by using a standard sample such as a standard grain.
摘要:
An Inspection apparatus and method includes utilizing an emitter which emits a light beam, an illumination optical system, a detection optical system, and a processor. The illumination optical system includes a polarization controller, a coherence reducer, and an objective lens, for illuminating a specimen with a polarization condition controlled and coherency reduced light beam through the objective lens. The detection optical system includes an imaging lens and a sensor for detecting an image of the specimen illuminated by the light beam through the illumination optical system. The processor processes a signal outputted from the sensor and detects a defect on the specimen.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
The present invention provides a high-precision alignment method, device and code for inspections that compare an inspection image with a reference image and detect defects from their differences. In one embodiment an inspection image and a reference image are divided into multiple regions. An offset is calculated for each pair of sub-images. Out of these multiple offsets, only the offsets with high reliability are used to determine an offset for the entire image. This allows high-precision alignment with little or no dependency on pattern density or shape, differences in luminance between images, and uneven luminance within individual images. Also, detection sensitivity is adjusted as necessary by monitoring alignment precision.
摘要:
A defect inspection apparatus includes an irradiation optical system 20, a detection optical system 30, and an image processor 40. In the irradiation optical system, a mirror 2603 is disposed to reflect downward a beam flux that has been guided to a first or second optical path, and a cylindrical lens 251 and an inclined mirror 2604 are disposed to focus the beam flux that has been directed downward by the mirror, at an inclination angle from a required oblique direction extending horizontally, onto a substrate 1 to be inspected, as a slit-shaped beam 90.