公开(公告)号：US20170148638A1

公开(公告)日：2017-05-25

申请号：US15361193

申请日：2016-11-25

Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Virginie LOUP ,  Pascal BESSON

IPC: H01L21/306 ,  H01L29/04 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/32105 ,  H01L21/32134 ,  H01L21/32139 ,  H01L29/04

Abstract: A method for performing selective etching of a semiconductor material in solution having the following successive steps: a) providing a substrate having a layer of amorphous semiconductor material to be etched and a layer of crystalline semiconductor material; b) oxidizing the surfaces of the layers of amorphous semiconductor material and of crystalline semiconductor material so as to form a first protective layer at the surface of the amorphous semiconductor material and a second protective layer at the surface of the crystalline semiconductor material; c) etching the first protective layer and the layer of amorphous semiconductor material with an alkaline etching solution, the etch rate v1 of the first protective layer being higher than the etch rate v2 of the second protective layer.

公开(公告)号：US20170110645A1

公开(公告)日：2017-04-20

申请号：US14883343

申请日：2015-10-14

Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Natalio MINGO BISQUERT ,  Guillaume BERNARD-GRANGER ,  Radivoje VRACAR ,  Nebil AYAPE KATCHO

IPC: H01L35/20 ,  B22F3/105 ,  B22F3/24 ,  C22C13/00

CPC classification number: H01L35/20 ,  B22F3/105 ,  B22F3/24 ,  B22F2998/10 ,  C22C1/0408 ,  C22C13/00 ,  B22F2009/041

Abstract: A method of manufacturing a thermoelectric material including: providing a half-Heusler compound of MgCuSn nanoparticles, obtaining a powder by mechanical alloying by using Mg chips, Si fine powder, Sn fine powder and Sb powder, the half-Heusler compound of MgCuSn nanoparticles and cyclohexane solution,wherein the weight percent V, of the cyclohexane solution is comprised between 0.5 wt % and 4.0 wt % and wherein the volume percent VHH of the Half-Heusler compound of MgCuSn nanoparticles satisfies: 1.4 vol %

公开(公告)号：US09623015B2

公开(公告)日：2017-04-18

申请号：US14440001

申请日：2013-11-05

Applicant: Commissariat à L'Energie Atomique et aux Energies Alternatives (CEA)

Inventor： Stéphane Prost ,  Marek Kirszenbaum ,  Mikael Le Dantec ,  Philippe Rousselot ,  Philippe Leboulch

IPC: A61K31/4439 ,  A61K31/506 ,  A61K45/06 ,  A61K31/404 ,  A61K31/426 ,  A61K31/427 ,  A61K31/496 ,  A61K31/5025 ,  A61K31/517 ,  A61K31/519 ,  A61K31/5377

CPC classification number: A61K31/4439 ,  A61K31/404 ,  A61K31/426 ,  A61K31/427 ,  A61K31/496 ,  A61K31/5025 ,  A61K31/506 ,  A61K31/517 ,  A61K31/519 ,  A61K31/5377 ,  A61K45/06 ,  A61K2300/00

Abstract: Provided are methods for eliminating hematologic cancer stem cells in vivo, and thus preventing cancer relapse. The methods comprise a Signal Transducer and Activator of Transcription 5 (STAT5) antagonist (e.g., a PPARγ agonist) after the patient has had ana initial course of treatment with an anti-cancer agent (e.g., a TKI), to eliminate residual cancer stem cells which cause relapse.

公开(公告)号：US20170104351A1

公开(公告)日：2017-04-13

申请号：US15290099

申请日：2016-10-11

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： Daniel CHATROUX ,  Laurent GARNIER ,  Sylvain MERCIER

IPC: H02J7/00

CPC classification number: H02J7/0016 ,  G01R31/3835 ,  G01R31/396 ,  G01R35/00 ,  H02J7/0021

Abstract: An assembly including a battery and a management system, wherein: the battery includes at least three stages in series between a negative terminal and a positive terminal of the battery; and the management system includes: at least two first voltage sensors each having first and second measurement nodes connected by at least two consecutive stages of the battery, said first sensors being arranged so that each stage has its positive terminal connected to one of the first sensors, and does not have its negative terminal connected to the same first sensor; and at least one second voltage sensor having first and second measurement nodes respectively coupled to the positive terminal and to the negative terminal of a same stage of the battery.

公开(公告)号：US09606507B2

公开(公告)日：2017-03-28

申请号：US13687268

申请日：2012-11-28

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： Christophe Martinez

IPC: G03H1/08 ,  G03H1/00

CPC classification number: G03H1/0841 ,  G03H1/0011 ,  G03H2001/0016 ,  G03H2001/0816 ,  G03H2001/0858 ,  G03H2240/41 ,  G03H2260/63

Abstract: A method for integrating a synthetic hologram in an image of a scene, including: forming, from a first image of the scene, a first matrix including pixels of two shades according to the gray level of the corresponding pixel of the first image, and a second matrix, image of the gray level difference between the corresponding pixels of the first image and of the first matrix; forming a third matrix based on a second image; forming a fourth matrix having each pixel including a central area with a surface area determined by the corresponding element of the second matrix and off-centered in the pixel according to the corresponding pixel of the third matrix; and performing a lithography of an opaque layer at the surface of a plate according to the pattern defined by the fourth pixel matrix.

公开(公告)号：US20170038585A1

公开(公告)日：2017-02-09

申请号：US15302968

申请日：2015-04-09

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： Christophe MARTINEZ ,  Umberto ROSSINI

IPC: G02B27/01 ,  G03B21/62 ,  G02B5/124

CPC classification number: G02B27/0101 ,  B60R1/001 ,  B60R2001/1215 ,  G02B5/0284 ,  G02B5/124 ,  G02B27/0172 ,  G02B2027/0196 ,  G03B21/62

Abstract: The invention relates to a screen comprising transparent portions and retroreflective portions distributed over all or part of the surface thereof.

Abstract translation: 本发明涉及一种包括分布在其全部或部分表面上的透明部分和回射部分的屏幕。

公开(公告)号：US09540670B2

公开(公告)日：2017-01-10

申请号：US14349976

申请日：2012-10-08

Applicant: bioMérieux ,  Commissariat à l'Energie Atomique et Aux Energies Alternatives

Inventor： Jean-Claude Boulain ,  Janie Dassa ,  Frédéric Ducancel ,  Bruno H. Muller ,  Alain Troesch ,  Laurent Mesta

IPC: C12N9/12 ,  C12P19/34

CPC classification number: C12P19/34 ,  C12N9/1247 ,  C12Y207/07006

Abstract: The present invention pertains to a mutated T7 RNA polymerase and its use, the T7 RNA polymerase being mutated at position 744, the glutamine (Q) being replaced by an amino acid selected from arginine (Q744R), leucine (Q744L) or proline (Q744P).

Abstract translation: 本发明涉及突变的T7 RNA聚合酶及其用途，T7RNA聚合酶在744位突变，谷氨酰胺（Q）被选自精氨酸（Q744R），亮氨酸（Q744L）或脯氨酸（Q744P） ）。

公开(公告)号：US20160372180A1

公开(公告)日：2016-12-22

申请号：US15160968

申请日：2016-05-20

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： Amara AMARA ,  Kiyoo ITOH ,  Khaja Ahmad SHAIK

IPC: G11C11/419 ,  G11C11/412

CPC classification number: G11C11/419 ,  G11C5/14 ,  G11C7/12 ,  G11C11/412

Abstract: The invention concerns a static random access memory (SRAM) comprising: a plurality of memory cells each having a pair of cross-coupled inverters (102, 104), a first of the inverters (102) being supplied by first and second power supply rails (VDD, VSS) and a second of the inverters (104) being supplied by third and fourth supply rails (114, 116), an input of the second inverter (102) being coupled to a first bit line (BL, WBL) via a first transistor (118); and a power supply circuit (120) adapted to apply a first voltage difference (VDD) across the first and second power supply rails (VDD, VSS) and a second voltage difference (VDH, VSL) across the third and fourth power supply rails (114, 116), the second voltage difference being greater than the first voltage difference.

Abstract translation: 本发明涉及一种静态随机存取存储器（SRAM），包括：多个存储单元，每个存储单元具有一对交叉耦合的反相器（102,104），第一反相器（102）由第一和第二电源轨 （VDD，VSS）和第二反相器（104）由第三和第四电源轨（114,116）提供，第二反相器（102）的输入通过第一位线（BL，WBL）经由 第一晶体管（118）; 以及电源电路（120），其适于跨越所述第一和第二电源轨（VDD，VSS）施加第一电压差（VDD），并且跨越所述第三和第四电源轨（...）施加第二电压差（VDH，VSL） 114,116），所述第二电压差大于所述第一电压差。

公开(公告)号：US20160247960A1

公开(公告)日：2016-08-25

申请号：US15028078

申请日：2014-10-14

Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Armand BETTINELLI

IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0224

CPC classification number: H01L31/0747 ,  H01L31/022425 ,  H01L31/022475 ,  H01L31/022483 ,  Y02E10/50

Abstract: A method for producing a photovoltaic cell including the following successive steps: i) providing a substrate including a p/n photovoltaic junction, successively covered by a transparent conductive oxide layer, a first layer made from electrically insulating material and a second layer made from metallic material; ii) performing localised heat treatment by laser irradiation under conditions enabling the electrically insulating material and the metallic material to be made to react locally to form a seed layer, made from a metal-charged glassy compound, the seed layer being electrically connected to the p/n junction by way of the transparent conductive oxide layer; iii) performing removal of the second layer of metallic material; iv) performing formation of an electric contact on the seed layer by electrochemical deposition.

Abstract translation: 一种用于制造光伏电池的方法，包括以下连续步骤：i）提供包括由透明导电氧化物层连续覆盖的ap / n光伏结的衬底，由电绝缘材料制成的第一层和由金属材料制成的第二层 ; ii）在使得电绝缘材料和金属材料能够局部反应以形成由金属带电的玻璃化合物制成的种子层的条件下，通过激光照射进行局部热处理，种子层电连接到p / n结，通过透明导电氧化物层; iii）执行第二层金属材料的去除; iv）通过电化学沉积在种子层上形成电接触。

公开(公告)号：US09402044B2

公开(公告)日：2016-07-26

申请号：US14390745

申请日：2013-04-04

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： Laurent Millet ,  Arnaud Verdant

IPC: H04N5/378 ,  H04N5/335 ,  H04N5/347 ,  H04N5/374

CPC classification number: H04N5/378 ,  H04N5/335 ,  H04N5/347 ,  H04N5/374

Abstract: The invention concerns a method of processing pixel values comprising: during a first read phase, generating a first digital value as a function of pixel values by controlling, based on first and second control signals and a first set of increment rates, the rate that a first counter (220-i) is incremented; and during a second read phase, generating a second digital value as a function of pixel values by controlling, based on first and second control signals and a second set of increment rates, the rate that said first counter (220-i) is incremented, the first and second sets of increment rates each defining an increment rate for each of a plurality of states of the first and second control signals, wherein said first set of increment rates is different from said second set of increment rates.

Abstract translation: 本发明涉及一种处理像素值的方法，包括：在第一读取阶段期间，通过基于第一和第二控制信号和第一组递增速率来控制基于像素值的函数的速率，生成作为像素值的函数的第一数字值 第一计数器（220-i）递增; 并且在第二读取阶段期间，通过基于第一和第二控制信号和第二组递增速率来控制所述第一计数器（220-i）递增的速率，生成作为像素值的函数的第二数字值， 所述第一和第二增量率集合各自定义所述第一和第二控制信号的多个状态中的每一个的增量率，其中所述第一组递增速率与所述第二组递增速率不同。