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1.发明公开公开(公告)号：US20240200225A1
公开(公告)日：2024-06-20
申请号：US18592587
申请日：2024-03-01
Inventor： Cunxin Huang , Muyun Lei , Haili Wang , Xiaoliang Wang
Abstract: The present application provides a growth method for single crystals of magnesia-alumina spinel by an edge-defined film-fed growth technique, comprising: putting seed crystals and crystal growth raw materials into a crystal growth furnace; vacuuming the crystal growth furnace, filling with inert gas, heating and melting the crystal growth raw materials; making the seed crystals contact a top end of a seam of a mold, pulling the seed crystals, shouldering, making crystals grow, and annealing to cool down after crystal growth. An upper heat shield and a lower heat shield are arranged above the mold, and a cross section of a slit between the heat shields is a curved surface. The cross section of the slit between the heat shields is controlled as a curved surface, so that the present application achieves the effect of uniform heating of the single crystals of magnesia-alumina spinel in an upward pulling process.
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公开(公告)号：US11959189B2
公开(公告)日：2024-04-16
申请号：US16839808
申请日：2020-04-03
Applicant: GlobalWafers Co., Ltd.
Inventor： Tapas Jain , Sumeet S. Bhagavat , Zheng Lu , Feng-Chien Tsai , Hong-Huei Huang
CPC classification number: C30B15/22 , C30B15/14 , C30B15/203 , C30B30/04
Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
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公开(公告)号：US20240068121A1
公开(公告)日：2024-02-29
申请号：US17897677
申请日：2022-08-29
Applicant: GlobalWafers Co., Ltd.
Inventor： JaeWoo Ryu , Carissima Marie Hudson , TaeWon Yuk , JunHwan Ji
Abstract: Synesthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.
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公开(公告)号：US20230095607A1
公开(公告)日：2023-03-30
申请号：US18073898
申请日：2022-12-02
Applicant: LONGI GREEN ENERGY TECHNOLGOY CO., LTD.
Inventor： Biao DING , Hao DENG , Shaolin MA , Zehua FU , Bao MA , Jianbo WANG
Abstract: A heat exchanging device includes: an inner wall and an outer wall, wherein the inner wall is close to the center axis of the heat exchanging device. The inner wall and the outer wall together form a chamber for a cooling medium to flow. The inner wall is provided with at least one protrusion component having an internal cavity. The protruding direction of the protrusion component faces the center axis. The internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall. The protruding direction of the protrusion component faces the crystal bar, and the internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall, which increases the heat exchanging area, and reduces the horizontal distance between the cooling medium and the crystal bar.
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公开(公告)号：US20220349087A1
公开(公告)日：2022-11-03
申请号：US17730742
申请日：2022-04-27
Applicant: GlobalWafers Co., Ltd.
Inventor： JaeWoo Ryu , Parthiv Daggolu , Soubir Basak , Nan Zhang
Abstract: Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. A plurality of process parameters are regulated during ingot growth including a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. Regulating the plurality of process parameters may include controlling the position of a maximum gauss plane of the horizontal magnetic field, controlling the strength of the horizontal magnetic field, and controlling the crucible rotation rate.
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Patent Agency Ranking
公开(公告)号：US11479874B2
公开(公告)日：2022-10-25
申请号：US16904564
申请日：2020-06-18
Applicant: Zing Semiconductor Corporation
Inventor： Weimin Shen , Gang Wang , Xianliang Deng , Hanyi Huang , Wee Teck Tan
Abstract: The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.
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公开(公告)号：US11473211B2
公开(公告)日：2022-10-18
申请号：US16971155
申请日：2019-02-27
Applicant: SUMCO CORPORATION
Inventor： Shin Matsukuma , Kazuyoshi Takahashi , Toshinori Seki , Tegi Kim , Ryusuke Yokoyama
Abstract: A method of estimating an oxygen concentration in monocrystalline silicon, which is pulled up by a pull-up device having a hot zone with a plane-asymmetric arrangement with respect to a plane defined by a crystal pull-up shaft and an application direction of a horizontal magnetic field, includes, in at least one of a neck-formation step or a shoulder-formation step for the monocrystalline silicon: a step of measuring a surface temperature of a silicon melt at a point defining a plane-asymmetric arrangement of a hot zone, and a step of estimating the oxygen concentration in a straight body of the pulled-up monocrystalline silicon based on the measured surface temperature of the silicon melt and a predetermined relationship between the surface temperature of the silicon melt and the oxygen concentration in the monocrystalline silicon.
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公开(公告)号：US11352712B1
公开(公告)日：2022-06-07
申请号：US16368425
申请日：2019-03-28
Applicant: Energy, United States Department of
Inventor： Michael P. Buric , Bo Liu
Abstract: One or more embodiments relate to a method for controlling fiber growth and fiber diameter in a laser heated pedestal growth (LHPG) system so as to provide long, continuous single-crystal optical fibers of uniform diameter. The method generally provides three independent parameter feedback controls to control the molten zone height, laser power, and fiber drawing rates simultaneously in order to reduce the mismatch between instantaneous diameter changes and current diameter. The method permits the growth of fibers with non-uniform diameters along the fiber's length. The method also provides the capability to stop the LHPG system, remove the exhausted pedestal feedstock with a second pedestal feedstock, and restart the LHPG system to provide a continuous fiber.
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公开(公告)号：US20220127749A1
公开(公告)日：2022-04-28
申请号：US17424098
申请日：2020-01-20
Applicant: SK SILTRON CO., LTD.
Inventor： Hyun Woo PARK
Abstract: The present invention provides a single crystal ingot growth control device applied to a body process for growing the diameter of an ingot to a target diameter, and the single crystal ingot growth control device includes: an input unit that receives a diameter error (ΔD) that is a difference value between a measured diameter (D) of the ingot and a target diameter (D_T); a calculation unit that performs integral calculation on the diameter error (ΔD) received by the input unit in real time and calculates a final pulling speed (P/S_F) for each set time (t) that is increased stepwise by reflecting the diameter error integral value ∫ΔD), and an output unit that outputs the final pulling speed (P/S_F) calculated by the calculation unit to a pulling controller during the set time (t).
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公开(公告)号：US11092936B2
公开(公告)日：2021-08-17
申请号：US16345268
申请日：2017-10-27
Applicant: RESONEST CORPORATION
Inventor： Hirotoshi Maegawa , Keiko Ikemoto , Akira Sassa
Abstract: A machine control device is configured to include a measurement unit that measures regarding a state of a controlled object handled by a machine apparatus, a determination unit that determines a constraint determination value by comparing the measurement result by the measurement unit with a predetermined constraint condition, control units and that perform operation control for the machine apparatus based on the constraint determination value determined by the determination unit according to the relationship set for the constraint determination value and the operation control, and a learning unit that reconfigures the relationship between the constraint determination value and the operation control when the constraint determination value changes due to the operation control performed by the control units.
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