公开(公告)号：US20230282563A1

公开(公告)日：2023-09-07

申请号：US18159500

申请日：2023-01-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Sota YAMAGUCHI

IPC分类号： H01L23/498 ,  H01L23/538 ,  H01L25/07 ,  H01L23/00

CPC分类号： H01L23/49844 ,  H01L23/5386 ,  H01L24/32 ,  H01L24/40 ,  H01L25/072 ,  H01L2224/32155 ,  H01L2224/40153 ,  H01L2224/40225

摘要： A semiconductor device includes a semiconductor chip that has a first main electrode on a rear surface thereof and a second main electrode on a front surface thereof, and a wiring layer electrically connected to at least one of the first main electrode or the second main electrode. The wiring layer includes a conductive member that is disposed on a front surface of the wiring layer.

公开(公告)号：US20230223441A1

公开(公告)日：2023-07-13

申请号：US18187683

申请日：2023-03-22

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hayato NAKANO

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/861 ,  H01L23/00

CPC分类号： H01L29/0696 ,  H01L29/7397 ,  H01L29/861 ,  H01L24/40 ,  H01L24/37 ,  H01L24/05 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37012 ,  H01L2224/37565 ,  H01L2224/37655 ,  H01L2224/40499 ,  H01L2224/40153 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L24/29 ,  H01L2224/29111 ,  H01L2224/2912 ,  H01L2224/29147 ,  H01L2924/014 ,  H01L24/32 ,  H01L2224/32225 ,  H01L24/73 ,  H01L2224/73263 ,  H01L2924/13055 ,  H01L2924/12036 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2924/01014 ,  H01L2224/05647 ,  H01L2924/0132 ,  H01L2924/01033 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033

摘要： Provided is a semiconductor device including: a transistor portion provided in a semiconductor substrate; and a diode portion provided in the semiconductor substrate, in which an area ratio of the transistor portion to the diode portion on a front surface of the semiconductor substrate is larger than 3.1 and smaller than 4.7. Provided is a semiconductor module including: a semiconductor device including a transistor portion and a diode portion provided in a semiconductor substrate; an external connection terminal electrically connected to the semiconductor device; and a coupling portion for electrically connecting the semiconductor device and the external connection terminal. The coupling portion may be in plane contact with a front surface electrode of the semiconductor device at a predetermined junction surface. An area ratio of the transistor portion to the diode portion may be larger than 2.8 and smaller than 4.7.