公开(公告)号：US20150357421A1

公开(公告)日：2015-12-10

申请号：US14745600

申请日：2015-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Che Huang ,  Pu-Fang Chen ,  Ting-Chun Wang

IPC: H01L29/32 ,  H01L21/67 ,  H01L29/16

CPC classification number: H01L29/32 ,  C30B29/06 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67098 ,  H01L21/67288 ,  H01L22/12 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile.

Abstract translation: 一些实施例涉及具有盘状硅体的硅晶片。 晶片包括由圆周边缘区域限定的中心部分。 布置在圆周边缘区域中的多个采样位置分别具有对应于晶片特性的多个晶片特性值。 多个晶片特性值根据预定的统计边缘区域轮廓彼此不同。

公开(公告)号：US09064823B2

公开(公告)日：2015-06-23

申请号：US13889515

申请日：2013-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Che Huang ,  Pu-Fang Chen ,  Ting-Chun Wang

IPC: G06F17/50 ,  H01L21/322 ,  C30B15/00 ,  C03B15/14 ,  C30B23/00 ,  H01L21/66 ,  C30B29/06

CPC classification number: H01L21/3225 ,  C30B29/06 ,  H01L21/324 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for qualifying a semiconductor wafer for subsequent processing, such as thermal processing. A plurality of locations are defined about a periphery of the semiconductor wafer, and one or more properties, such as oxygen concentration and a density of bulk micro defects present, are measured at each of the plurality of locations. A statistical profile associated with the periphery of the semiconductor wafer is determined based on the one or more properties measured at the plurality of locations. The semiconductor wafer is subsequently thermally treated when the statistical profile falls within a predetermined range. The semiconductor wafer is rejected from subsequent processing when the statistical profile deviates from the predetermined range. As such, wafers prone to distortion, warpage, and breakage are rejected from subsequent thermal processing.

Abstract translation: 提供了一种用于限定半导体晶片以进行后续处理（诸如热处理）的方法。 围绕半导体晶片的周边限定多个位置，并且在多个位置的每一个处测量一个或多个特性，例如存在的氧浓度和体积微缺陷的密度。 基于在多个位置处测量的一个或多个属性来确定与半导体晶片的外围相关联的统计概况。 当统计特性落在预定范围内时，半导体晶片随后进行热处理。 当统计概况偏离预定范围时，半导体晶片从后续处理中被拒绝。 因此，容易发生变形，翘曲和断裂的晶片从随后的热处理中被拒绝。

公开(公告)号：US10141413B2

公开(公告)日：2018-11-27

申请号：US14745600

申请日：2015-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Che Huang ,  Pu-Fang Chen ,  Ting-Chun Wang

IPC: H01L31/0232 ,  H01L29/32 ,  H01L29/16 ,  H01L21/67 ,  H01L21/66 ,  H01L21/322 ,  H01L21/324 ,  C30B29/06

Abstract: Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile.

公开(公告)号：US20140273291A1

公开(公告)日：2014-09-18

申请号：US13889515

申请日：2013-05-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： I-Che Huang ,  Pu-Fang Chen ,  Ting-Chun Wang

IPC: H01L21/66

CPC classification number: H01L21/3225 ,  C30B29/06 ,  H01L21/324 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for qualifying a semiconductor wafer for subsequent processing, such as thermal processing. A plurality of locations are defined about a periphery of the semiconductor wafer, and one or more properties, such as oxygen concentration and a density of bulk micro defects present, are measured at each of the plurality of locations. A statistical profile associated with the periphery of the semiconductor wafer is determined based on the one or more properties measured at the plurality of locations. The semiconductor wafer is subsequently thermally treated when the statistical profile falls within a predetermined range. The semiconductor wafer is rejected from subsequent processing when the statistical profile deviates from the predetermined range. As such, wafers prone to distortion, warpage, and breakage are rejected from subsequent thermal processing.

Abstract translation: 提供了一种用于限定半导体晶片以进行后续处理（诸如热处理）的方法。 围绕半导体晶片的周边限定多个位置，并且在多个位置的每一个处测量一个或多个特性，例如存在的氧浓度和体积微缺陷的密度。 基于在多个位置处测量的一个或多个属性来确定与半导体晶片的外围相关联的统计概况。 当统计特性落在预定范围内时，半导体晶片随后进行热处理。 当统计概况偏离预定范围时，半导体晶片从后续处理中被拒绝。 因此，容易发生变形，翘曲和断裂的晶片从随后的热处理中被拒绝。