公开(公告)号：US20020126732A1

公开(公告)日：2002-09-12

申请号：US10039290

申请日：2002-01-04

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Ali Shakouri ,  Peyman Milanfar ,  Kenneth Pedrotti ,  James Christofferson

IPC: G01J005/00

CPC classification number: G01J5/58 ,  G01J5/00 ,  G01J5/0096 ,  G01J5/08 ,  G01J5/0862 ,  G01J5/0896 ,  G01J2005/0077

Abstract: Methods and apparatus for non-contact thermal measurement which are capable of providing sub micron surface thermal characterization of samples, such as active semiconductor devices. The method obtains thermal image information by reflecting a light from a surface of a device in synchronous with the modulation of the thermal excitation and then acquiring and processing an AC-coupled thermoreflective image. The method may be utilized for making measurements using different positioning techniques, such as point measurements, surface scanning, two-dimensional imaging, and combinations thereof. A superresolution method is also described for increasing the resultant image resolution, based on multiple images with fractional pixel offsets, without the need to increase the resolution of the image detectors being utilized. The thermoreflective method provides a spatial resolution better than current infrared cameras, operates within a wide temperature range, and is capable of a thermal resolution on the order of 10 mKnull.

Abstract translation: 用于非接触式热测量的方法和装置，其能够提供诸如有源半导体器件的样品的亚微米表面热表征。 该方法通过与热激发的调制同步地反射来自装置的表面的光，然后获取和处理AC耦合的热反射图像来获得热图像信息。 该方法可以用于使用不同的定位技术进行测量，例如点测量，表面扫描，二维成像及其组合。 还描述了超分辨率方法，用于基于具有分数像素偏移的多个图像来增加所得到的图像分辨率，而不需要增加正在使用的图像检测器的分辨率。 该热反射方法提供的空间分辨率优于目前的红外摄像机，在宽温度范围内工作，并能够在10 mK°的数量级下进行热分解。

公开(公告)号：US20020175408A1

公开(公告)日：2002-11-28

申请号：US10112578

申请日：2002-03-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

IPC: H01L023/48

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as nullnanowiresnull, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract translation: 具有小于约200nm的均匀直径的一维纳米结构。 这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。 由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。 纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。 所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

公开(公告)号：US20020172820A1

公开(公告)日：2002-11-21

申请号：US10112698

申请日：2002-03-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

IPC: B32B019/00 ,  H01S003/30 ,  H01S005/00 ,  C30B023/00 ,  D02G003/00 ,  C30B025/00 ,  C30B028/14

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as nullnanowiresnull, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).