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    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220342296A1

    公开(公告)日：2022-10-27

    申请号：US17810861

    申请日：2022-07-06

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： WEI-CHUNG HU ,  CHI-TA LU ,  CHI-MING TSAI

    IPC分类号： G03F1/70 ,  G06F30/398

    摘要： A method for manufacturing a semiconductor device is provided. The method includes the following operations. A first layout including a plurality of first features is provided. A modified second layout is determined. The modified second layout includes a plurality of modified features separated from each other, and each of the plurality of modified features respectively overlaps each of the plurality of first features. The modified second layout is outputted to a photomask.

    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210005552A1

    公开(公告)日：2021-01-07

    申请号：US17026283

    申请日：2020-09-20

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： CHI-TA LU ,  CHI-MING TSAI

    IPC分类号： H01L23/528 ,  H01L21/768

    摘要： A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.

    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200098689A1

    公开(公告)日：2020-03-26

    申请号：US16212112

    申请日：2018-12-06

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： CHI-TA LU ,  CHI-MING TSAI

    IPC分类号： H01L23/528 ,  H01L23/00 ,  H01L21/768

    摘要： A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via parallel to the first surface of the substrate, wherein the first conductive line includes a second surface at least partially interfaced with the conductive via, the second surface of the first conductive line includes a first end, a second end opposite to the first end and a first central axis passing through the first end and the second end, the cross section of the conductive via includes a second central axis parallel to the first central axis and a third central axis orthogonal to the second central axis.

    METHOD FOR MANUFACTURING PHOTOMASK AND SEMICONDUCTOR THEREOF
    8.
    发明申请
    METHOD FOR MANUFACTURING PHOTOMASK AND SEMICONDUCTOR THEREOF 审中-公开

    公开(公告)号：US20200097631A1

    公开(公告)日：2020-03-26

    申请号：US16141112

    申请日：2018-09-25

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： CHIN-MIN HUANG ,  CHING-HUNG LAI ,  JIA-GUEI JOU ,  YIN-CHUAN CHEN ,  CHI-MING TSAI

    IPC分类号： G06F17/50 ,  H01L21/027 ,  G03F1/36

    摘要： A method for forming a photomask is provided. The method includes: receiving an initial layout including a plurality of first patterns and a plurality of second patterns; decomposing the initial layout into a first layout including the plurality of first patterns and a second layout including the plurality of second patterns; inserting a plurality of third patterns into the first layout, wherein each of the plurality of third patterns is adjacent to at least one of the plurality of first patterns; comparing the first layout and the second layout; identifying a fourth pattern as an overlapping portion of the plurality of third patterns overlapping one of the plurality of second patterns; increasing a width of the fourth pattern; and outputting the first layout including the first patterns, the third patterns and the fourth patterns into a first photomask.

    APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR WAFER
    9.
    发明申请
    APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR WAFER 审中-公开
    用于制造半导体波形的装置和方法

    公开(公告)号：US20150087208A1

    公开(公告)日：2015-03-26

    申请号：US14037916

    申请日：2013-09-26

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： CHI-MING TSAI ,  HAN-HSIN KUO ,  FU-MING HUANG ,  LIANG-GUANG CHEN

    IPC分类号： H01L21/02 ,  H01L21/321

    CPC分类号： H01L21/67046

    摘要： In a semiconductor wafer manufacturing apparatus, a rotation module is provided to hold the semiconductor wafer at a plane. The semiconductor wafer is revolved by the rotation module around a first axis. The first axis is substantially perpendicular to the plane. A cleaning module is configured to revolve around a second axis when the cleaning module contacts the surface of the semiconductor wafer. A mechanism is further provided to enable the rotation module and/or the cleaning module to move along a direction substantially perpendicular to the first axis. Consequently, the relative velocities at the contact points between the semiconductor wafer and the cleaning module are changed. Moreover, no relative velocity at any contact point between the semiconductor wafer and the cleaning module is zero or close to zero.

    摘要翻译： 在半导体晶片制造装置中，设置旋转模块以将半导体晶片保持在平面。 半导体晶片围绕第一轴线由旋转模块旋转。 第一轴基本垂直于该平面。 清洁模块构造成当清洁模块接触半导体晶片的表面时围绕第二轴旋转。 还提供一种机构，以使得旋转模块和/或清洁模块能够沿着基本上垂直于第一轴线的方向移动。 因此，改变半导体晶片和清洁模块之间的接触点处的相对速度。 此外，在半导体晶片和清洁模块之间的任何接触点处的相对速度都不为零或接近零。