公开(公告)号：US20220367396A1

公开(公告)日：2022-11-17

申请号：US17814840

申请日：2022-07-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： MING-HO TSAI ,  JYUN-HONG CHEN ,  CHUN-CHEN LIU ,  YU-NU HSU ,  PENG-REN CHEN ,  WEN-HAO CHENG ,  CHI-MING TSAI

IPC分类号： H01L23/00

摘要： A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.

公开(公告)号：US20240312939A1

公开(公告)日：2024-09-19

申请号：US18674950

申请日：2024-05-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： MING-HO TSAI ,  JYUN-HONG CHEN ,  CHUN-CHEN LIU ,  YU-NU HSU ,  PENG-REN CHEN ,  WEN-HAO CHENG ,  CHI-MING TSAI

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/11462 ,  H01L2224/11618 ,  H01L2224/117 ,  H01L2224/11849 ,  H01L2224/13026 ,  H01L2224/13147 ,  H01L2224/1403

摘要： A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.

公开(公告)号：US20200020655A1

公开(公告)日：2020-01-16

申请号：US16353425

申请日：2019-03-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： MING-HO TSAI ,  JYUN-HONG CHEN ,  CHUN-CHEN LIU ,  YU-NU HSU ,  PENG-REN CHEN ,  WEN-HAO CHENG ,  CHI-MING TSAI

IPC分类号： H01L23/00

摘要： A semiconductor device manufacturing method including: simultaneously forming a plurality of conductive bumps respectively on a plurality of formation sites by adjusting a forming factor in accordance with an environmental density associated with each formation site; wherein the plurality of conductive bumps including an inter-bump height uniformity smaller than a value, and the environmental density is determined by a number of neighboring formation sites around each formation site in a predetermined range.