公开(公告)号：US20220324887A1

公开(公告)日：2022-10-13

申请号：US17708323

申请日：2022-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Younsoo KIM ,  Jaewoon KIM ,  Kazuki HARANO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yutaro AOKI ,  Gyuhee PARK ,  Younjoung CHO ,  Wakana FUSE ,  Yoshiki MANABE ,  Hiroyuki UCHIUZOU ,  Masayuki KIMURA ,  Takahiro YOSHII

IPC: C07F9/00 ,  H01L49/02 ,  H01L27/108 ,  C23C16/34 ,  C23C16/455

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):

公开(公告)号：US20210284667A1

公开(公告)日：2021-09-16

申请号：US17193531

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Jaewoon KIM ,  Gyuhee PARK ,  Younjoung CHO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yoshiki MANABE ,  Yutaro AOKI ,  Hiroyuki UCHIUZOU ,  Wakana FUSE

IPC: C07F9/141 ,  C23C16/18 ,  H01L21/285

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.

公开(公告)号：US20250154648A1

公开(公告)日：2025-05-15

申请号：US18791776

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo KIM ,  Daeun KIM ,  Akio SAITO ,  Tomoharu YOSHINO ,  Kazuki HARANO ,  Takashi HIGASHINO ,  Shotaro TAGUCHI ,  Yoshiki MANABE ,  Yu Jin PARK ,  Byung Seok LEE ,  Seung-min RYU ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: C23C16/34 ,  C07F17/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

Abstract: Provided are a precursor for forming a metal thin film including a metal compound represented by Chemical Formula 1, a method for manufacturing a metal thin film using the same, and a metal thin film manufactured by the method.

公开(公告)号：US20210388010A1

公开(公告)日：2021-12-16

申请号：US17346400

申请日：2021-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Younsoo KIM ,  Gyuhee PARK ,  Younjoung CHO ,  Yutaro AOKI ,  Wakana FUSE ,  Kazuki HARANO ,  Takanori KOIDE ,  Yoshiki MANABE ,  Kazuya SAITO ,  Hiroyuki UCHIUZOU

IPC: C07F9/00 ,  H01L51/00 ,  C23C16/455 ,  C23C16/34

Abstract: An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),