公开(公告)号：US20250132253A1

公开(公告)日：2025-04-24

申请号：US18625341

申请日：2024-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin PARK ,  Hyeonkyu LEE ,  Sungsoo YIM

IPC: H01L23/528 ,  H10B12/00

Abstract: A semiconductor memory device includes a conductive line extending in a first direction, first and second channel regions connected to the conductive line, contact plugs apart from the conductive line in a vertical direction with the first and second channel regions therebetween, a back gate electrode extending in a second direction perpendicular to the first direction between the first and second channel regions, and a back gate dielectric film covering surfaces of the back gate electrode, wherein the back gate dielectric film includes a vertical extension portion arranged between the back gate electrode and each of the first and second channel regions to cover sidewalls of the back gate electrode, and a horizontal extension portion connected integrally to the vertical extension portion and covering the back gate electrode at one position selected from a first position facing the conductive line and a second position facing the contact plugs.

公开(公告)号：US20210134942A1

公开(公告)日：2021-05-06

申请号：US16938286

申请日：2020-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjin KIM ,  Sungsoo YIM ,  Suklae KIM ,  Hyukwoo KWON ,  Byunghyun LEE ,  Yoonyoung CHOI

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit semiconductor device includes a plurality of cylindrical structures separated from each other on a substrate; and a plurality of supporters having an opening region exposing side surfaces of the plurality of cylindrical structures, the plurality of supporters being in contact with the side surfaces of the plurality of cylindrical structures and supporting the plurality of cylindrical structures, wherein each of the plurality of supporters has both side surfaces having slopes and has a top width that is less than a bottom width.

公开(公告)号：US20200312853A1

公开(公告)日：2020-10-01

申请号：US16829025

申请日：2020-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonyoung CHOI ,  Sungsoo YIM ,  Byeongmoo KANG ,  Seongmo KOO ,  Sejin PARK ,  Jinwoo BAE

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area.