公开(公告)号：US20200312853A1

公开(公告)日：2020-10-01

申请号：US16829025

申请日：2020-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonyoung CHOI ,  Sungsoo YIM ,  Byeongmoo KANG ,  Seongmo KOO ,  Sejin PARK ,  Jinwoo BAE

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area.