公开(公告)号：US20230357283A1

公开(公告)日：2023-11-09

申请号：US18218206

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoshiaki OBANA ,  Hyeyun PARK ,  Sujin KWON ,  Shiyong YI ,  Junwon HAN ,  Hiroshi MORITA ,  Rieko HAMADA ,  Kouji IINO

IPC: C07F5/02 ,  H10K30/00 ,  H10K39/32 ,  H10K85/30 ,  H10K85/60

CPC classification number: C07F5/02 ,  C07F5/022 ,  H10K30/451 ,  H10K39/32 ,  H10K85/322 ,  H10K85/655 ,  H10K85/656 ,  H10K85/6576

Abstract: An organic compound, an organic photoelectric device, an image sensor, and an electronic device, the organic compound being represented by Chemical Formula 1:






wherein, in Chemical Formula 1, R1, R2, R3, R4, R5, and R6 are each independently a hydrogen atom, a substituted or unsubstituted C1-C4 alkyl group, a substituted or unsubstituted C1-C4 alkoxy group, or a substituted or unsubstituted C1-C4 alkylthio group, and A is a functional group including a heteroaryl group that includes at least one sulfur atom.

公开(公告)号：US20180308705A1

公开(公告)日：2018-10-25

申请号：US16023836

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： SHIGENOBU MAEDA ,  Jeong Ju PARK ,  Eunsung KIM ,  Hyunwoo KIM ,  Shiyong YI

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.

公开(公告)号：US20160155743A1

公开(公告)日：2016-06-02

申请号：US14956049

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsung Kim ,  Seungchul KWON ,  Kyoungseon KIM ,  Dong-Won KIM ,  Shiyong YI

IPC: H01L27/105 ,  H01L21/306 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/10814 ,  H01L27/1157 ,  H01L27/11582

Abstract: A method for forming patterns of a semiconductor device includes forming a block copolymer layer on an underlying layer, the underlying layer including a first block copolymer having first and second polymer blocks; phase-separating the block copolymer layer to form first block portions including the first polymer block and a second block portion surrounding the first block portions and including the second polymer block; removing the first block portions to form first openings; forming block copolymer pillars to fill the first openings, the block copolymer pillars including a second block copolymer having third and fourth polymer blocks; phase-separating the block copolymer pillars to form third block portions including the third polymer block and fourth block portions including the fourth polymer block within the first openings; and removing the third block portions to form second openings.

Abstract translation: 用于形成半导体器件的图案的方法包括在下层上形成嵌段共聚物层，下层包括具有第一和第二聚合物嵌段的第一嵌段共聚物; 相分离所述嵌段共聚物层以形成包含所述第一聚合物嵌段的第一嵌段部分和围绕所述第一嵌段部分并包括所述第二聚合物嵌段的第二嵌段部分; 去除第一块部分以形成第一开口; 形成嵌段共聚物柱以填充第一开口，所述嵌段共聚物柱包括具有第三和第四聚合物嵌段的第二嵌段共聚物; 相分离嵌段共聚物柱以形成包含第三聚合物嵌段的第三嵌段部分和在第一开口内包含第四聚合物嵌段的第四嵌段部分; 并移除第三块部分以形成第二开口。